Device, manufacturing method thereof, and electronic device

ABSTRACT

A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.

TECHNICAL FIELD

The present invention relates to an object, a method, or a manufacturingmethod. Further, the present invention relates to a process, a machine,manufacture, or a composition of matter. In particular, the presentinvention relates to, for example, an electrode, a device, asemiconductor, a semiconductor device, a display device, alight-emitting device, a lighting device, a power storage device, amirror image device, a memory device, or a processor. The presentinvention relates to a method for manufacturing an electrode, asemiconductor, a semiconductor device, a display device, alight-emitting device, a lighting device, a power storage device, amirror image device, a memory device, or a processor. The presentinvention relates to a method for driving an electrode, a semiconductordevice, a display device, a light-emitting device, a lighting device, apower storage device, a mirror image device, a memory device, or aprocessor.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A display device, a light-emitting device, a lightingdevice, an electro-optical device, a semiconductor circuit, and anelectronic device include a semiconductor device in some cases.

BACKGROUND ART

Recently, devices including miniaturized elements have been required forelectronic devices with higher performance, smaller size, and lighterweight. With the miniaturization of the devices, requirements for theminiaturization of wiring layers have become stricter. Moreover, forexample, wiring layers with low resistance are necessary to form deviceshaving excellent properties (see Patent Document 1).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    H05-347360

DISCLOSURE OF INVENTION

An object of one embodiment of the present invention is to provide amethod for forming a wiring having excellent electrical characteristics.Another object of one embodiment of the present invention is to providea method for forming a wiring having stable electrical characteristics.Another object of one embodiment of the present invention is to providea method for forming a minute wiring. Another object of one embodimentof the present invention is to provide a method for embedding aconductor in an insulator. Another object of one embodiment of thepresent invention is to provide a miniaturized semiconductor device.

Another object of one embodiment of the present invention is to providea method for manufacturing a device having excellent electricalcharacteristics. Another object of one embodiment of the presentinvention is to provide a method for manufacturing a device havingstable electrical characteristics. Another object of one embodiment ofthe present invention is to provide a method for manufacturing a highlyreliable device. Another object of one embodiment of the presentinvention is to provide a method for manufacturing a device with a highyield.

Note that the descriptions of these objects do not disturb the existenceof other objects. In one embodiment of the present invention, there isno need to achieve all the objects. Other objects will be apparent fromand can be derived from the description of the specification, thedrawings, the claims, and the like.

One embodiment of the present invention is a method for manufacturing adevice which includes an element, an electrode, and a region where theelectrode and the element are connected, including the steps of forminga first insulating film over a substrate, forming a second insulatingfilm over the first insulating film, removing part of the firstinsulating film and part of the second insulating film to form a firstopening, forming a first conductor in the first opening and over a topsurface of the second insulating film, forming a second conductor byplanarizing a surface of the first conductor so as to remove part of thefirst conductor, forming a third insulating film over the secondinsulating film and the second conductor, removing part of the secondinsulating film and part of the third insulating film to form a secondopening so as to expose part of a top surface and part of a side surfaceof the second conductor, forming a third conductor over a top surface ofthe third insulating film and in the second opening so as to be incontact with the second conductor, and removing part of the thirdconductor to form a fourth conductor.

One embodiment of the present invention is a method for manufacturing adevice which includes an element, an electrode, and a region where theelectrode and the element are connected, including the steps of forminga first insulating film over a substrate, forming a second insulatingfilm over the first insulating film, removing part of the firstinsulating film and part of the second insulating film to form a firstopening, forming a first conductor in the first opening and over a topsurface of the second insulating film, removing part of the firstconductor by a chemical mechanical polishing method to make a surface ofthe first conductor parallel to a bottom surface of the substrate, sothat a second conductor is formed in the first opening, forming a thirdinsulating film over the second insulating film and the secondconductor, removing part of the second insulating film and part of thethird insulating film to form a second opening so as to expose part of atop surface and part of a side surface of the second conductor, forminga third conductor over a top surface of the third insulating film and inthe second opening so as to be in contact with the second conductor, andremoving part of the third conductor to form a fourth conductor.

One embodiment of the present invention is a method for manufacturing adevice which includes an element, an electrode, and a region where theelectrode and the element are connected, including the steps of forminga first insulating film over a substrate, forming a second insulatingfilm over the first insulating film, removing part of the firstinsulating film and part of the second insulating film to form a firstopening, forming a first conductor in the first opening and over a topsurface of the second insulating film, removing part of the firstconductor by a chemical mechanical polishing method to make a surface ofthe first conductor parallel to a bottom surface of the substrate, sothat a second conductor is formed in the first opening, forming a thirdinsulating film over the second insulating film and the secondconductor, removing part of the second insulating film and part of thethird insulating film to form a second opening so as to expose part of atop surface and part of a side surface of the second conductor, forminga third conductor over a top surface of the third insulating film and inthe second opening so as to be in contact with the second conductor, andremoving part of the third conductor by a chemical mechanical polishingmethod to make a surface of the third conductor parallel to a bottomsurface of the substrate, so that a fourth conductor is formed in thesecond opening.

In the above-described structures, the element preferably includes anoxide semiconductor. Furthermore, in the above-described structures, thesecond insulating film preferably includes aluminum, and the firstinsulating film preferably includes silicon. In the above-describedstructures, the second insulating film preferably has a lowerhydrogen-transmitting property than the first insulating film.

One embodiment of the present invention is a device which includes afirst conductor, a second conductor, a first insulating film, and asecond insulating film. In the device, the second insulating filmincludes a region in contact with a top surface of the first insulatingfilm and a region in contact with a side surface of the secondconductor, the side surface of the second conductor includes a region incontact with the first insulating film, and the second conductor is incontact with a side surface of the first conductor, a top surface of thefirst conductor, and the top surface of the first insulating film.

One embodiment of the present invention is a device which includes afirst conductor, a second conductor, a first insulating film, and asecond insulating film. In the device, the second insulating filmincludes a region in contact with a top surface of the first insulatingfilm and a region in contact with a side surface of the secondconductor, the second conductor includes a first region having a firstthickness and a second region having a second thickness, the firstregion is in contact with a top surface of the first conductor, thesecond region is in contact with the top surface of the first insulatingfilm, and the first thickness is smaller than the second thickness.

One embodiment of the present invention is a device which includes afirst conductor, a second conductor, a first insulating film, and asecond insulating film. In the device, the second insulating filmincludes a region in contact with a top surface of the first insulatingfilm and a region in contact with a side surface of the secondconductor, the first conductor includes a third conductor and a fourthconductor, a side surface of the third conductor includes a region incontact with the first insulating film, the fourth conductor is incontact with a top surface of the third conductor, a side surface of thesecond conductor is in contact with the second insulating film, and thesecond conductor is in contact with the side surface of the thirdconductor, a top surface of the fourth conductor, and a top surface ofthe first insulating film.

In the above-described structures, the device preferably includes anoxide semiconductor, and the oxide semiconductor is preferably stackedover the second conductor. Furthermore, in the above-describedstructures, the second insulating film preferably includes aluminum, andthe first insulating film preferably includes silicon. In theabove-described structures, the second insulating film preferably has alower hydrogen-transmitting property than the first insulating film.

One embodiment of the present invention is a device which includes afirst conductor, a second conductor, a first insulating film, and asecond insulating film. In the device, the second insulating filmincludes a region in contact with a top surface of the first insulatingfilm, the second conductor includes a region positioned over the firstconductor, a region that is the highest of a top surface of the firstconductor is higher than a region that is the highest of a top surfaceof the second insulating film, and a region that is the lowest of abottom surface of the second conductor is lower than a region that isthe highest of the top surface of the second insulating film.

One embodiment of the present invention is an electronic deviceincluding the device according to any one of the above-describedstructures.

With one embodiment of the present invention, a method for forming awiring having excellent electrical characteristics can be provided. Withone embodiment of the present invention, a method for forming a wiringhaving stable electrical characteristics can be provided. With oneembodiment of the present invention, a method for embedding a conductorin an insulator can be provided.

With one embodiment of the present invention, a method for manufacturinga device having excellent electrical characteristics can be provided.Furthermore, a method for forming a minute wiring can be provided. Withone embodiment of the present invention, a method for manufacturing adevice having stable electrical characteristics can be provided. Withone embodiment of the present invention, a method for manufacturing ahighly reliable device can be provided. With one embodiment of thepresent invention, a method for manufacturing a device with a high yieldcan be provided. Furthermore, a miniaturized semiconductor device can beprovided.

Note that the description of these effects does not disturb theexistence of other effects. One embodiment of the present invention doesnot necessarily have all the effects described above. Other effects willbe apparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1C are cross-sectional views illustrating examples of adevice of one embodiment of the present invention;

FIGS. 2A and 2B are cross-sectional views illustrating examples of adevice of one embodiment of the present invention;

FIGS. 3A and 3B are cross-sectional views illustrating examples of adevice of one embodiment of the present invention;

FIG. 4 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIGS. 5A to 5D are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 6A to 6C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 7A to 7C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 8A to 8C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 9A and 9B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIG. 10 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIG. 11 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIG. 12 illustrates an example of a device of one embodiment of thepresent invention;

FIGS. 13A and 13B illustrate an example of a device of one embodiment ofthe present invention;

FIG. 14 illustrates an example of a device of one embodiment of thepresent invention;

FIGS. 15A to 15C are circuit diagrams according to one embodiment of thepresent invention;

FIGS. 16A to 16C are circuit diagrams according to one embodiment of thepresent invention;

FIGS. 17A to 17E are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 18A to 18C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 19A to 19C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 20A to 20C are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIG. 21 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIG. 22 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIGS. 23A and 23B are cross-sectional views illustrating examples of atransistor of one embodiment of the present invention;

FIG. 24 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIG. 25 is a band diagram of a region including an oxide semiconductoraccording to one embodiment of the present invention;

FIGS. 26A and 26B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 27A and 27B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 28A and 28B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 29A and 29B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 30A and 30B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 31A and 31B are a top view and a cross-sectional view illustratingan example of a transistor of one embodiment of the present invention;

FIGS. 32A and 32B are cross-sectional views illustrating examples of atransistor of one embodiment of the present invention;

FIGS. 33A to 33D are Cs-corrected high-resolution TEM images of a crosssection of a CAAC-OS and a schematic cross-sectional view of a CAAC-OS;

FIGS. 34A to 34D are Cs-corrected high-resolution TEM images of a planeof a CAAC-OS;

FIGS. 35A to 35C show structural analysis of a CAAC-OS and a singlecrystal oxide semiconductor by XRD;

FIGS. 36A and 36B show electron diffraction patterns of a CAAC-OS;

FIG. 37 shows a change in crystal part of an In—Ga—Zn oxide induced byelectron irradiation;

FIG. 38 illustrates a configuration example of a CPU of one embodiment;

FIG. 39 is a circuit diagram of a memory element of one embodiment;

FIG. 40 illustrates a configuration example of an RF tag of oneembodiment;

FIGS. 41A to 41F each illustrate an application example of an RF tag ofan embodiment;

FIGS. 42A to 42C are a top view and circuit diagrams of a display deviceof one embodiment;

FIGS. 43A to 43F each illustrate an electronic device of an embodiment;

FIGS. 44A and 44B are top views each illustrating a device of oneembodiment of the present invention;

FIGS. 45A and 45B are block diagrams each illustrating a device of oneembodiment of the present invention;

FIGS. 46A and 46B are cross-sectional views each illustrating a deviceof one embodiment of the present invention;

FIG. 47 is a cross-sectional view illustrating a device of oneembodiment of the present invention;

FIG. 48 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIG. 49 is a cross-sectional view illustrating an example of a device ofone embodiment of the present invention;

FIGS. 50A to 50C are cross-sectional views illustrating examples of adevice of one embodiment of the present invention;

FIGS. 51A to 51D are cross-sectional views illustrating an example of amethod for manufacturing a device of one embodiment of the presentinvention;

FIGS. 52A and 52B show cross sections observed by STEM;

FIG. 53 shows a cross section observed by STEM;

FIGS. 54A and 54B show cross sections observed by STEM;

FIG. 55 shows a cross section observed by STEM;

FIGS. 56A and 56B are a cross-sectional view and a top view,respectively, of an element; and

FIG. 57 shows measured resistance of elements.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described in detail withreference to the drawings. However, the present invention is not limitedto the following description, and it is easily understood by thoseskilled in the art that modes and details disclosed herein can bemodified in various ways. Furthermore, the present invention is notconstrued as being limited to description of the following embodiments.In describing structures of the invention with reference to thedrawings, common reference numerals are used for the same portions indifferent drawings. Note that the same hatched pattern is applied tosimilar parts, and the similar parts are not especially denoted byreference numerals in some cases. In the case where the description of acomponent denoted by a different reference numeral is referred to, thedescription of the thickness, the composition, the structure, the shape,or the like of the component can be used as appropriate.

Note that the size, the thickness of films (layers), or regions indrawings is sometimes exaggerated for simplicity.

A voltage usually refers to a potential difference between a givenpotential and a reference potential (e.g., a source potential or aground potential (GND)). A voltage can be referred to as a potential andvice versa. In general, a potential (a voltage) is a relative value andis determined depending on the difference relative to a referencepotential. Therefore, even a “ground potential” is not necessarily 0 V.For example, in some cases, a “ground potential” is the lowest potentialin a circuit. In other cases, a “ground potential” is a moderatepotential in a circuit. In those cases, a positive potential and anegative potential are set using the potential as a reference.

Note that the ordinal numbers such as “first” and “second” are used forconvenience and do not denote the order of steps or the stacking orderof layers. Therefore, for example, the term “first” can be replaced withthe term “second”, “third”, or the like as appropriate. In addition, theordinal numbers in this specification and the like do not correspond tothe ordinal numbers which specify one embodiment of the presentinvention in some cases.

Note that a “semiconductor” has characteristics of an “insulator” insome cases when the conductivity is sufficiently low, for example.Further, a “semiconductor” and an “insulator” cannot be strictlydistinguished from each other in some cases because a bordertherebetween is not clear. Accordingly, a “semiconductor” in thisspecification can be called an “insulator” in some cases. Similarly, an“insulator” in this specification can be called a “semiconductor” insome cases.

Further, a “semiconductor” has characteristics of a “conductor” in somecases when the conductivity is sufficiently high, for example. Further,a “semiconductor” and a “conductor” cannot be strictly distinguishedfrom each other in some cases because a border therebetween is notclear. Accordingly, a “semiconductor” in this specification can becalled a “conductor” in some cases. Similarly, a “conductor” in thisspecification can be called a “semiconductor” in some cases.

Note that an impurity in a semiconductor refers to, for example,elements other than the main components of the semiconductor. Forexample, an element with a concentration of lower than 0.1 atomic % isan impurity. When an impurity is contained, the density of states (DOS)may be formed in a semiconductor, the carrier mobility may be decreased,or the crystallinity may be decreased. In the case where thesemiconductor is an oxide semiconductor, examples of an impurity whichchanges characteristics of the semiconductor include Group 1 elements,Group 2 elements, Group 13 elements, Group 14 elements, Group 15elements, and transition metals other than the main components;specifically, there are hydrogen (included in water), lithium, sodium,silicon, boron, phosphorus, carbon, and nitrogen, for example. In thecase of an oxide semiconductor, oxygen vacancies may be formed by entryof impurities such as hydrogen. In the case where the semiconductor is asilicon layer, examples of an impurity which changes characteristics ofthe semiconductor include oxygen, Group 1 elements except hydrogen,Group 2 elements, Group 13 elements, and Group 15 elements.

Note that in this specification, the description “A has a shape suchthat an end portion extends beyond an end portion of B” may indicate,for example, the case where at least one of end portions of A ispositioned on an outer side than at least one of end portions of B in aplan view or a cross-sectional view. Thus, the description “A has ashape such that an end portion extends beyond an end portion of B” canbe read as the description “one end portion of A is positioned on anouter side than one end portion of B in a top view,” for example.

In this specification, the term “parallel” indicates that the angleformed between two straight lines is greater than or equal to −10° andless than or equal to 10°, and accordingly also includes the case wherethe angle is greater than or equal to −5° and less than or equal to 5°.A term “substantially parallel” indicates that the angle formed betweentwo straight lines is greater than or equal to −30° and less than orequal to 30°. The term “perpendicular” indicates that the angle formedbetween two straight lines is greater than or equal to 80° and less thanor equal to 100°, and accordingly also includes the case where the angleis greater than or equal to 85° and less than or equal to 95°. A term“substantially perpendicular” indicates that the angle formed betweentwo straight lines is greater than or equal to 60° and less than orequal to 120°.

In this specification, trigonal and rhombohedral crystal systems areincluded in a hexagonal crystal system.

In this specification, a term “semiconductor” can be referred to as an“oxide semiconductor.” As the semiconductor, a Group 14 semiconductorsuch as silicon or germanium; a compound semiconductor such as siliconcarbide, germanium silicide, gallium arsenide, indium phosphide, zincselenide, cadmium sulfide, or an oxide semiconductor; or an organicsemiconductor can be used.

In this specification, the term “oxide” can be referred to as an “oxidesemiconductor,” an “oxide insulator,” or an “oxide conductor.”

In this specification, a device may refer to, for example, asemiconductor device, a display device, a light-emitting device, alighting device, a power storage device, a mirror image device, a memorydevice, an electro-optical device, and the like.

Embodiment 1

In this embodiment, a method for manufacturing a device including aconductive layer that establishes an electrical connection betweenelements will be described. Here, the conductive layer refers to a layerincluding a conductor, for example. Examples of the conductive layer arean electrode and a plug. A device of one embodiment of the presentinvention includes an element and an electrode, for example, where theelectrode has a region connected to the element.

[Example of Device]

FIG. 1A illustrates an example of a cross section of a device 500 of oneembodiment of the present invention. The device 500 illustrated in FIG.1A includes a layer 621, a layer 622, and a layer 620 between the layer621 and the layer 622. The layer 620 includes an insulating film 571 incontact with a top surface of the layer 621, a conductive layer 543, aconductive layer 513 in contact with a top surface of the insulatingfilm 571 and a top surface of the conductive layer 543, an insulatingfilm 585 in contact with the top surface of the insulating film 571, andan insulating film 586 in contact with a top surface of the insulatingfilm 585. The layer 622 is provided in contact with a top surface of theinsulating film 586 and a top surface of the conductive layer 513.

A side surface of the conductive layer 543 includes a region in contactwith the insulating film 571 and a region in contact with the conductivelayer 513. The top surface of the conductive layer 543 includes a regionin contact with the conductive layer 513.

A side surface of the conductive layer 513 includes a region in contactwith the insulating film 585 and a region in contact with the insulatingfilm 586.

Here, the conductive layer 543 includes a projection portion 606 whichis a region projecting from the top surface of the insulating film 571.The conductive layer 513 includes a region in contact with a top surfaceand a side surface of the projection portion 606. A bottom surface ofthe conductive layer 513 preferably has a depression portion.

When the conductive layer 543 includes the projection portion 606, thecontact area between the conductive layer 543 and the conductive layer513 can be increased, for example. This enables a reduction of contactresistance between the conductive layer 543 and the conductive layer 513in some cases. When the bottom surface of the conductive layer 513 has adepression portion, the contact area between the conductive layer 513and the conductive layer 543 can be increased to lower the contactresistance in some cases.

The layer 621 and the layer 622 preferably include a conductor and aninsulator. Furthermore, the layer 621 and the layer 622 preferablyinclude an element and further preferably include a semiconductorelement. Here, the semiconductor element refers to, for example, anelement including a semiconductor and a conductor. The conductive layer543 is preferably electrically connected to the conductor or thesemiconductor included in the layer 621. The conductive layer 513 ispreferably electrically connected to the conductor or the semiconductorincluded in the layer 622.

As illustrated in FIG. 1B, the layer 620 may include a plurality ofconductors that are in contact with the top surface of the insulatingfilm 571. The device 500 illustrated in FIG. 1B is different from thedevice 500 illustrated in FIG. 1A in including a conductive layer 413that is in contact with the top surface of the insulating film 571.Here, because the conductive layer 413 is formed over a region notincluding a projection portion such as the projection portion 606, abottom surface of the conductive layer 413 has a higher flatness thanthe bottom surface of the conductive layer 513 in the cross sectionillustrated in FIG. 1B. The conductive layer 513 and the conductivelayer 413 preferably include a first region located over a regionincluding a projection portion such as the projection portion 606 and asecond region located over a region not including such a projectionportion.

The layer 620 may include an insulating film 584 between the insulatingfilm 571 and the layer 621, as illustrated in FIG. 1C. In FIG. 1C, theside surface of the conductive layer 543 is in contact with theinsulating film 571 and the insulating film 584.

FIG. 2A illustrates an example in which the shape of the conductivelayer 543 included in the layer 620 is different from that in FIG. 1C.In the cross section illustrated in FIG. 2A, the width of the conductivelayer 543 gets narrower from its top surface toward its bottom surface.

As illustrated in FIG. 2B, the conductive layer 543 and the conductivelayer 513 included in the layer 620 may be formed of two or moreconductive layers. In FIG. 2B, the conductive layer 543 includes aconductive layer 543 a that is in contact with the insulating film 584,the insulating film 571, and the conductive layer 513 and a conductivelayer 543 b that is formed so as to be embedded in contact with an innersurface of the conductive layer 543 a. The conductive layer 513 includesa conductive layer 513 a that is in contact with the insulating film 585and the insulating film 586 and a conductive layer 513 b that is formedso as to be embedded in contact with an inner surface of the conductivelayer 513 a.

The device 500 illustrated in FIG. 3A is different from the device 500illustrated in FIG. 1A in that the top surface of the projection portion606 included in the layer 620 is partly covered and partly not coveredwith the conductive layer 513 and in that the side surface of theprojection portion 606 is partly covered and partly not covered with theconductive layer 513.

FIG. 3B illustrates an example in which the shape of the projectionportion 606 included in the layer 620 is different from that in FIG. 1A.The device 500 illustrated in FIG. 3B is different from the device 500illustrated in FIG. 1A in that the projection portion 606 includes aregion in contact with the top surface of the insulating film 585 andincludes a side surface in contact with the insulating film 586.

In FIGS. 1A to 1C, FIGS. 2A and 2B, and FIGS. 3A and 3B, the conductivelayer 543 is electrically connected to a conductive layer included inthe layer 621 and the conductive layer 513, for example. The conductivelayer 513 preferably functions as a wiring layer that is lead inside thedevice, for example. The layer 622 preferably includes a plurality ofconductive layers electrically connected to the conductive layer 513. Anexample of the case will be described with reference to FIG. 4.

FIG. 4 includes the layer 621, the layer 622, and the layer 620 thatconnects the layer 621 to the layer 622. The layer 621 includes a layer623 including a semiconductor element, an insulating film 581 in contactwith a top surface of the layer 623, a conductive layer 511 in contactwith the top surface of the layer 623, an insulating film 582 in contactwith a top surface of the insulating film 581, a conductive layer 542 incontact with a top surface of the conductive layer 511, an insulatingfilm 583 in contact with a top surface of the insulating film 582, and aconductive layer 512 in contact with a top surface of the conductivelayer 542. The conductive layer 543 is in contact with a top surface ofthe conductive layer 512. The conductive layer 511 is preferablyelectrically connected to the semiconductor element included in thelayer 623.

The insulating film 582 is preferably in contact with the top surface ofthe conductive layer 511. Furthermore, the conductive layer 512 ispreferably in contact with the top surface of the insulating film 582.

A side surface of the conductive layer 511 is in contact with theinsulating film 581, a side surface of the conductive layer 542 is incontact with the insulating film 582, and a side surface of theconductive layer 512 is in contact with the insulating film 583.

The layer 622 includes an insulating film 587 in contact with the topsurface of the insulating film 586, a conductive layer 544 in contactwith the top surface of the conductive layer 513, an insulating film 588in contact with a top surface of the insulating film 587, a conductivelayer 514 in contact with a top surface of the conductive layer 544, anda layer 624 in contact with a top surface of the insulating film 588 anda top surface of the conductive layer 514. The layer 624 includes asemiconductor element. Furthermore, the conductive layer 514 ispreferably electrically connected to the semiconductor element includedin the layer 624.

The insulating film 587 is preferably in contact with the top surface ofthe conductive layer 513. The insulating film 587 is preferably incontact with a top surface of the conductive layer 413. The conductivelayer 514 is preferably in contact with the top surface of theinsulating film 587.

The conductive layer 543 electrically connects the conductive layer 512included in the layer 621 to the conductive layer 513. The layer 622includes the conductive layer 544 which electrically connects theconductive layer 513 to the conductive layer 514 included in the layer622. The conductive layers such as the conductive layers 542 to 544 arereferred to as plugs in some cases. In some cases, it is preferable thatthe conductive layers 511 to 514 function as wiring layers that are leadinside the device, for example. Such wiring layers preferably have smallvariation in resistance within the device.

<Insulating Film 571>

Here, the insulating film 571 preferably has a function of blockinghydrogen and water. For example, the insulating film 571 preferably haslower hydrogen- and water-transmitting properties than at least any oneof the insulating films 584 to 586. The insulating film 571 preferablyhas a function of blocking oxygen. For example, the insulating film 571preferably has a lower oxygen-transmitting property than at least anyone of the insulating films 584 to 586. Here, “low hydrogen- andwater-transmitting properties” refers to the hydrogen- andwater-transmitting properties which are lower than those of siliconoxide or the like that is generally used as an insulator. Furthermore,“a low oxygen-transmitting property” refers to the oxygen-transmittingproperty which is lower than that of silicon oxide or the like that isgenerally used as an insulator.

Owing to the hydrogen blocking function of the insulating film 571,hydrogen contained in an insulator or the like in the layer 621 can beprevented from being diffused into the layer 622. For example, in thecase where the layer 622 includes a semiconductor element including anoxide semiconductor, the prevention of the hydrogen diffusion into theoxide semiconductor might suppress a degradation in semiconductorelement characteristics.

Owing to the oxygen blocking function of the insulating film 571, theoutward diffusion of oxygen from the layer 622 might be suppressed,leading to easy supply of oxygen to the layer 622. For example, in thecase where the layer 622 includes a semiconductor element including anoxide semiconductor, easy supply of oxygen to the oxide semiconductormight improve semiconductor element characteristics.

The insulating film 571 can be formed using a single-layer structure ora stacked-layer structure using, for example, aluminum oxide, hafniumoxide, tantalum oxide, zirconium oxide, lead zirconate titanate (PZT),strontium titanate (SrTiO₃), (Ba,Sr)TiO₃ (BST), silicon nitride, or thelike. Alternatively, aluminum oxide, bismuth oxide, germanium oxide,niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttriumoxide, zirconium oxide, or gallium oxide may be added to the insulatingfilm, for example. Alternatively, the insulating film may be subjectedto nitriding treatment to be an oxynitride film. A layer of siliconoxide, silicon oxynitride, or silicon nitride may be stacked over theinsulating film. Aluminum oxide is particularly preferable because ofits excellent barrier property against water or hydrogen.

The insulating film 571 may be a stack including a layer of a materialthat does not easily transmit water and hydrogen and a layer containingan insulating material. The insulating film 571 may be, for example, astack including a layer containing silicon oxide or silicon oxynitride,a layer containing a metal oxide, or the like.

<Insulating Film 581 and the Like>

The insulating films 581 to 588 illustrated in FIG. 1A to FIG. 4 isformed to have a single-layer structure or a stacked-layer structureusing, for example, silicon oxide, silicon oxynitride, silicon nitrideoxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminumnitride oxide, aluminum nitride, or the like.

The insulating films 581 to 588 can be formed by a sputtering method, aCVD method (including a thermal CVD method, an MOCVD method, a PECVDmethod, and the like), an MBE method, an ALD method, a PLD method, orthe like. In particular, it is preferable that the insulating film beformed by a CVD method, further preferably a plasma CVD method becausecoverage can be further improved. It is preferable to use a thermal CVDmethod, an MOCVD method, or an ALD method in order to reduce plasmadamage.

The insulating films 581 to 588 can be formed using a siliconcarbonitride film (SiCN film). Alternatively, undoped silicate glass(USG), boron phosphorus silicate glass (BPSG), borosilicate glass (BSG),or the like can be used. USG, BPSG, and the like may be formed by anatmospheric pressure CVD method. Alternatively, hydrogen silsesquioxane(HSQ) or the like may be applied by a coating method.

Note that as shown in FIG. 10 and the like, the insulating film 581, theinsulating film 583, and the like may have two or more stacked layers.FIG. 10 illustrates an example in which the insulating film 581 includestwo layers of an insulating film 581 a and an insulating film 581 b, andthe insulating film 583 includes two layers of an insulating film 583 aand an insulating film 583 b. For example, the insulating film 581 a andthe insulating film 583 a may be formed using an insulating filmcontaining nitrogen and silicon, the insulating film 581 b and theinsulating film 583 b may be formed using USG, and those insulatingfilms may be stacked.

<Conductive Layer 511, Conductive Layer 542, and the Like>

As the conductive layers 511 to 514 and the conductive layers 542 to 544illustrated in FIG. 1A to FIG. 4, a conductive material such as a metalmaterial, an alloy material, or a metal oxide material can be used. Forexample, the conductive layers are formed to have a single-layerstructure or a stacked-layer structure using any of metals such asaluminum, titanium, chromium, nickel, copper, yttrium, zirconium,niobium, molybdenum, silver, tantalum, and tungsten, or an alloycontaining any of these metals as a main component. Alternatively, theconductive layers can be formed using a metal nitride such as tungstennitride, molybdenum nitride, or titanium nitride.

As an example, a stack of a material such as titanium nitride ortitanium and another material may be used. For example, stacking ofanother metal after titanium nitride or titanium is deposited in anopening might improve adhesion to the opening.

Alternatively, for example, the following structures can be given: asingle-layer structure of an aluminum film containing silicon, atwo-layer structure in which an aluminum film is stacked over a titaniumfilm, a two-layer structure in which an aluminum film is stacked over atungsten film, a two-layer structure in which a copper film is stackedover a copper-magnesium-aluminum alloy film, a two-layer structure inwhich a copper film is stacked over a titanium film, a two-layerstructure in which a copper film is stacked over a tungsten film, athree-layer structure in which a titanium film or a titanium nitridefilm, an aluminum film or a copper film, and a titanium film or atitanium nitride film are stacked in this order, and a three-layerstructure in which a molybdenum film or a molybdenum nitride film, analuminum film or a copper film, and a molybdenum film or a molybdenumnitride film are stacked in this order. Note that a transparentconductive material containing indium oxide, tin oxide, or zinc oxidemay be used.

[Method for Manufacturing Device]

Next, an example of a method for manufacturing the device 500illustrated in FIG. 2B will be described with reference to FIG. 5A toFIG. 8C.

First, the insulating film 584, the insulating film 571, and theinsulating film 585 are sequentially formed over the layer 621 (see FIG.5A). The insulating film 584, the insulating film 571, and theinsulating film 585 can be formed by a sputtering method, a chemicalvapor deposition (CVD) method (including a thermal CVD method, a metalorganic CVD (MOCVD) method, a plasma enhanced CVD (PECVD) method, andthe like), a molecular beam epitaxy (MBE) method, an atomic layerdeposition (ALD) method, a pulsed laser deposition (PLD) method, or thelike, for example. In particular, it is preferable that the insulatingfilms be formed by a CVD method, further preferably a plasma CVD methodbecause coverage can be further improved. It is preferable to use athermal CVD method, an MOCVD method, or an ALD method in order to reduceplasma damage.

Then, a mask 611 is formed over the insulating film 585. The mask may beformed by, for example, a lithography method with the use of a resist.Alternatively, a hard mask formed of an inorganic film or a metal filmmay be used (see FIG. 5B).

Then, the insulating film 585, the insulating film 571, and theinsulating film 584 are etched with the mask 611 to form an opening 601.Then, the mask is removed (see FIG. 5C). The etching of the insulatorsmay be conducted by a dry etching method, for example. In the case wherealuminum oxide is used as the insulating film 571, dry etching with theuse of gas such as boron trichloride may be conducted, for example.

Next, a conductive film to be the conductive layer 543 is formed overthe insulating film 585 and in the opening 601. Here, an example ofusing a stacked film of the conductive layer 543 a and the conductivelayer 543 b as the conductive layer 543 is described. A conductive film543 c to be the conductive layer 543 a is formed (see FIG. 5D). Then, aconductive film 543 d to be the conductive layer 543 b is formed (seeFIG. 6A). Note that the conductive layer 543 may be a single-layer filmor a stacked-layer film of three or more layers.

Then, surfaces of the conductive film 543 d and the conductive film 543c are planarized (the conductive film 543 d and the conductive film 543c are partly removed), so that the insulating film 585 is exposed. Thus,the conductive layer 543 a and the conductive layer 543 b are formed(see FIG. 6B). For the removal of the conductive film 543 d and theconductive film 543 c, a polishing method such as a chemical mechanicalpolishing (CMP) method is preferably used, for example. Alternatively,dry etching may be used. For example, a method such as etch-back may beused. When a polishing method such as a CMP method is used, thepolishing rate of the conductive film 543 d and the conductive film 543c might have variations on the plane of the device. In this case, in aregion where the polishing rate is high, a period during which theinsulating film 585 is exposed might be long. The polishing rate of theconductive film 543 d and the conductive film 543 c is preferably lowerthan that of the insulating film 585. The low polishing rate of theinsulating film 585 allows it to serve as a polishing stopper film inthe polishing step of the conductive films 543 d and 543 c, and furthercan increase the planarity of a surface of the insulating film 585.

Here, the CMP method is a method in which a surface of a processingobject is planarized by a combination of chemical and mechanicalactions. In general, a polishing cloth is attached to a polishing stage,the polishing stage and the processing object are each rotated or swungwhile slurry (abrasives) is supplied between the processing object andthe polishing cloth, and the surface of the processing object ispolished by chemical reaction between the slurry and the surface of theprocessing object and by action of mechanical polishing of theprocessing object with the polishing cloth.

As the polishing cloth for the CMP method, for example, polyurethanefoam, nonwoven fabric, suede, or the like can be used. As abrasiveparticles, for example, silica (silicon oxide), cerium oxide, manganeseoxide, aluminum oxide, or the like can be used. As silica, for example,fumed silica or colloidal silica can be used.

The pH of the slurry used for the CMP method may be adjusted in view ofremovability of the processing object or stability of the slurrysolution. For example, in the case where acidic slurry is used, theinsulating film 585 serving as the stopper film preferably has highresistance to acid. Alternatively, in the case where alkaline slurry isused, the insulating film 585 preferably has high resistance to alkali.

As an oxidizer in the slurry, for example, hydrogen peroxide or the likemay be used.

Here, an example of the case where the conductive layer 543 containstungsten and the insulating film 585 contains silicon oxide isdescribed. In the slurry, fumed silica or colloidal silica, for example,is preferably used as the abrasive particles. For example, acidic slurryis preferably used, and, for example, aqueous hydrogen peroxide ispreferably used as an oxidizer.

Here, for example, a titanium nitride film and a tungsten film may beused as the conductive layer 543 a and the conductive layer 543 b,respectively. Furthermore, titanium or the like may be deposited betweenthe conductive layer 543 a and the conductive layer 543 b.

Alternatively, copper may be included in the conductive layer 543.

The insulating film 585 preferably includes silicon, and furtherpreferably includes silicon and oxygen. For example, silicon oxide,silicon oxynitride, or the like is preferably included.

Next, the insulating film 586 is formed (see FIG. 6C). For the formationmethod of the insulating film 586, the formation method of theinsulating film 584 or the like may be referred to.

Then, a mask 607 is formed over the insulating film 586 (see FIG. 7A).For the mask 607, the description of the mask 611 may be referred to.

Then, the insulating film 586 and the insulating film 585 are etchedwith the use of the mask 607 to provide an opening 602 and an opening603. Then, the mask is removed (see FIG. 7B). The etching of theinsulators may be conducted by, for example, dry etching. Here, theetching rate of the insulating film 571 is preferably lower than that ofthe insulating film 585 with a large difference between the etchingrates. In other words, it is preferable that the insulating film 571 beetched as little as possible when the opening 602 and the opening 603are formed.

In the case where there is only a small difference between the etchingrate of the insulating film 571 and the etching rate of the insulatingfilm 585, as illustrated in FIG. 7C for example, the insulating film 571is removed by a thickness 610. In some cases, for example, the thickness610 has variations within the device. As described later, a conductivelayer is formed in the opening 602 and the opening 603. The conductivelayer is used as a wiring layer that is lead inside the device, forexample. The variation in resistance of such a wiring layer ispreferably small.

In the case where the thickness 610 has variations within the device,the thickness variation may lead to a variation in resistance of thewiring layer. Thus, the thickness 610 is preferably as small aspossible. Furthermore, the variation in the thickness 610 is preferablyas small as possible.

When the etching rate of the insulating film 571 is lower than that ofthe insulating film 585 with a large difference between those etchingrates, the thickness 610 can become small or the variation in thethickness 610 can become small.

The variation in the thickness 610 may lead to a variation in the heightof the projection portion of the conductive layer 543. Reducing thevariation in the thickness 610 may reduce the variation in the height ofthe projection portion.

Here, it is preferable to use a film including aluminum oxide and a filmincluding oxygen and silicon as the insulating film 571 and theinsulating film 585, respectively, for example, in which case theetching rate of the insulating film 571 can sometimes becomesufficiently lower than that of the insulating film 585.

Here, the opening 602 is provided over the conductive layer 543. In somecases, the etching rate of the conductive layer 543 is lower than thatof the insulating film 585. In that case, the insulating film 585 isetched first, so that a projection portion of the conductive layer 543is formed in a lower part of the opening 602. The opening 603 is formedover a region not including a conductive layer that is connected to thelayer 621, such as the conductive layer 543; accordingly, a projectionportion of a conductive layer is not formed in a lower part of theopening 603, that is, the bottom surface of the opening 603 is more flatthan that of the opening 602. Because a conductive layer provided insuch an opening with high flatness is not influenced by the projectionportion in terms of the cross-sectional area, the variation in theresistance of the conductive layer can be reduced in some cases.

Next, a film that is to be a conductive layer such as the conductivelayer 513 is formed in the opening 602 and the opening 603. Here, anexample in which a stacked-layer film of the conductive layer 513 a andthe conductive layer 513 b is used as the conductive layer 513 isdescribed. First, a conductive film 513 c to be the conductive layer 513a is formed. Then, a conductive film 513 d to be the conductive layer513 b is formed (see FIG. 8A). Note that the conductive layer 513 may bea single-layer film or a stacked-layer film of three or more layers.

Then, surfaces of the conductive film 513 d and the conductive film 513c are planarized (the conductive film 513 d and the conductive film 513c are partly removed), so that the insulating film 586 is exposed. Thus,the conductive layer such as the conductive layer 513 is formed (seeFIG. 8B). For the removal of the conductive film 513 d and theconductive film 513 c, a polishing method such as a CMP method ispreferably used, for example.

Next, the layer 622 is formed over the insulating film 586 and theconductive layer such as the conductive layer 513 (see FIG. 8C). Throughthe above-described process, the device 500 illustrated in FIG. 2B canbe manufactured.

Here, in the case where the opening 602 is formed by etching theinsulating film 586 and the insulating film 585 as illustrated in FIG.7B, part of the insulating film 585 might remain on the sidewall of theconductive layer 543. This remaining insulating film is referred to asan insulating film 598.

An example of that case is illustrated in FIG. 50A. The device 500illustrated in FIG. 50A includes the insulating film 598 that is incontact with a sidewall of the projection portion 606 included in theconductive layer 543 and the top surface of the insulating film 571. Theinsulating film 598 includes a region sandwiched between the conductivelayer 513 and the conductive layer 543. FIG. 50C is an enlarged view ofa portion illustrated in FIG. 50A. Here, the insulating film 598 may bein contact with only part of the side surface of the conductive layer543. For example, as illustrated in FIG. 50B, in the device 500, theinsulating film 598 may be in contact with part of the sidewall of theprojection portion 606 included in the conductive layer 543. In FIG.50B, part of the side surface of the projection portion 606 is incontact with the insulating film 598. The side surface of the projectionportion 606 includes a region not covered with the insulating film 598in the vicinity of an upper part of the projection portion 606. Here,the insulating film 598 included in the device 500 may improve coveragewith the conductive layer 513, in some cases, suppressing the defects inthe shape of the conductive layer 513, for example.

<Variation of Device>

Next, an example in which the layer 620 includes a capacitor 150 in thedevice 500 will be described. The device 500 illustrated in FIG. 20C isdifferent from the device 500 illustrated in FIG. 4 in including aconductive layer 521 formed over the layer 621, a conductive layer 523formed in the same layer as the conductive layer 513, and a conductivelayer 522 that connects a conductive layer included in the layer 621 tothe conductive layer 523. Although the conductive layer 413 that isincluded in the device in FIG. 4 is not illustrated in FIG. 20C, theconductive layer 413 may be included in the device in FIG. 20C.

Here, the capacitor is formed of a pair of electrodes which are theconductive layers 521 and 523 and the insulating film 571 which is adielectric. Like the conductive layer 543, the conductive layer 522includes a projection portion above the insulating film 571. Like theconductive layer 513, the conductive layer 523 is formed so as to coverthe projection portion of the conductive layer 522.

Although FIG. 20C shows an example in which the conductive layer 522 isformed of two layers of conductive layers 522 a and 522 b and theconductive layer 523 is formed of two layers of conductive layers 523 aand 523 b, the conductive layer 522 and the conductive layer 523 mayeach be a single layer or a stacked-layer film of three or more layers.

A method for manufacturing the device 500 illustrated in FIG. 20C willbe described with reference to FIGS. 17A to 17E, FIGS. 18A to 18C, FIGS.19A to 19C, and FIGS. 20A to 20C.

First, the insulating film 584 is formed over the layer 621. Next, amask 608 is provided over the insulating film 584 (see FIG. 17A). Then,the insulating film 584 is etched with the use of the mask 608 to forman opening (see FIG. 17B). Then, a conductive film 526 to be theconductive layer 521 is formed in the opening and over the insulatingfilm 584 (see FIG. 17C). Next, a surface of the conductive film 526 isplanarized (the conductive film 526 is partly removed), so that theconductive layer 521 is formed (see FIG. 17D). Next, the insulating film571 and the insulating film 585 are formed (see FIG. 17E).

Next, a mask 614 is provided over the insulating film 585 (see FIG.18A). Then, the insulating film 585, the insulating film 571, and theinsulating film 584 are etched with the use of the mask 614, so that theopening 601 and the opening 603 are formed over the layer 621 (see FIG.18B). Then, the conductive film 543 c to be the conductive layer 543 a,the conductive layer 522 a, and the like is formed in the openings 601and 603 and over the insulating film 585, and subsequently to theformation of the conductive film 543 c, the conductive film 543 d to bethe conductive layer 543 b, the conductive layer 522 b, and the like isformed (see FIG. 18C).

Next, surfaces of the conductive film 543 d and the conductive film 543c are planarized (the conductive film 543 d and the conductive film 543c are partly removed), so that the conductive layer 543 and theconductive layer 522 are formed (see FIG. 19A). Then, the insulatingfilm 586 is formed (see FIG. 19B). Then, the mask 614 is formed over theinsulating film 586 (see FIG. 19C).

Then, the insulating film 586 and the insulating film 585 are etchedwith the use of the mask 614, so that the opening 602 and an opening 605are formed (see FIG. 20A). Here, projection portions are included inlower parts of the opening 602 and the opening 605. As for theprojection portions, the description for FIG. 7B may be referred to, forexample.

Next, a conductive film is formed in the openings 602 and 605 and overthe insulating film 586, and then a surface of the conductive film isplanarized (the conductive film is partly removed), so that theconductive layer 523 and the conductive layer 513 are formed (see FIG.20B). Then, the layer 622 is formed over the conductive layer 523, theconductive layer 513, and the insulating film 586; thus, the device 500illustrated in FIG. 20C is obtained.

[Example of Transistor]

An example in which a transistor is used as an element included in thelayer 622 will be described. An example of a transistor 490 included inthe layer 622 is illustrated in FIGS. 9A and 9B. FIG. 9A is a top viewof the transistor 490. FIG. 9B illustrates cross sections along thedashed-dotted lines E1-E2 and E3-E4 in FIG. 9A.

In the example of the cross sections illustrated in FIG. 9B, thetransistor 490 is formed over a layer 625. The layer 625 may be asubstrate having an insulating surface or a conductor. The layer 625preferably includes an insulator and a conductor. The layer 625 mayinclude the layer 621, for example.

The transistor 490 illustrated in FIGS. 9A and 9B includes an insulatingfilm 402 over the layer 625, a semiconductor 406 a over the insulatingfilm 402, a semiconductor 406 b over the semiconductor 406 a, aconductive layer 416 a and a conductive layer 416 b which are in contactwith a top surface of the semiconductor 406 b, a semiconductor 406 cwhich is in contact with a side surface of the semiconductor 406 a, topand side surfaces of the semiconductor 406 b, top and side surfaces ofthe conductive layer 416 a, and top and side surfaces of the conductivelayer 416 b, an insulating film 412 over the semiconductor 406 c, and aconductive layer 404 over the insulating film 412.

Here, the layer 625 may include a conductive layer that faces thesemiconductor 406 a with the insulating film 402 provided therebetween.The conductive layer may function as an electrode of the transistor 490.

Note that the semiconductor 406 b has a function of a channel formationregion of the transistor. Furthermore, the conductive layer 404 has afunction of a first gate electrode (also referred to as a front gateelectrode) of the transistor. The conductive layer 416 a and theconductive layer 416 b have a function of the source electrode and thedrain electrode of the transistor.

Here, it is preferable to use an oxide semiconductor as thesemiconductor 406 a, the semiconductor 406 b, and the semiconductor 406c. The oxide semiconductor will be described later.

As illustrated in FIG. 9B, the semiconductor 406 b can be electricallysurrounded by an electric field of the conductive layer 404 (a structurein which a semiconductor is electrically surrounded by an electric fieldof a conductor is referred to as a surrounded channel (s-channel)structure). Therefore, a channel is formed in the entire semiconductor406 b (bulk) in some cases. In the s-channel structure, a large amountof current can flow between a source and a drain of the transistor, sothat a high on-state current can be obtained.

The s-channel structure is suitable for a miniaturized transistorbecause a high on-state current can be obtained. A device including aminiaturized transistor can have a high integration degree and highdensity. For example, the channel length of the transistor is preferablyless than or equal to 40 nm, further preferably less than or equal to 30nm, and still further preferably less than or equal to 20 nm, and thechannel width of the transistor is preferably less than or equal to 40nm, further preferably less than or equal to 30 nm, and still furtherpreferably less than or equal to 20 nm.

The semiconductor 406 a, the semiconductor 406 b, and the semiconductor406 c will be described below.

By placing the semiconductor 406 a over the semiconductor 406 b andplacing the semiconductor 406 c under the semiconductor 406 b,electrical characteristics of the transistor can be increased in somecases.

The semiconductor 406 a preferably includes a CAAC-OS. The semiconductor406 b preferably includes a CAAC-OS. The semiconductor 406 c preferablyincludes a CAAC-OS.

The semiconductor 406 b is an oxide semiconductor containing indium, forexample. The oxide semiconductor 406 b can have high carrier mobility(electron mobility) by containing indium, for example. The semiconductor406 b preferably contains an element M. The element M is preferablyaluminum, gallium, yttrium, tin, or the like. Other elements which canbe used as the element M are boron, silicon, titanium, iron, nickel,germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium,tantalum, tungsten, magnesium, and the like. Note that two or more ofthe above elements may be used in combination as the element M. Theelement M is an element having high bonding energy with oxygen, forexample. The element M is an element whose bonding energy with oxygen ishigher than that of indium. The element M is an element that canincrease the energy gap of the oxide semiconductor, for example.Furthermore, the semiconductor 406 b preferably contains zinc. When theoxide semiconductor contains zinc, the oxide semiconductor is easilycrystallized, in some cases.

Note that the semiconductor 406 b is not limited to the oxidesemiconductor containing indium. The semiconductor 406 b may be, forexample, an oxide semiconductor which does not contain indium andcontains zinc, an oxide semiconductor which does not contain indium andcontains gallium, or an oxide semiconductor which does not containindium and contains tin, e.g., a zinc tin oxide or a gallium tin oxide.

For the semiconductor 406 b, an oxide with a wide energy gap may beused, for example. For example, the energy gap of the semiconductor 406b is greater than or equal to 2.5 eV and less than or equal to 4.2 eV,preferably greater than or equal to 2.8 eV and less than or equal to 3.8eV, further preferably greater than or equal to 3 eV and less than orequal to 3.5 eV.

For example, the semiconductor 406 a and the semiconductor 406 c areoxide semiconductors including one or more elements, or two or moreelements other than oxygen included in the semiconductor 406 b. Sincethe semiconductor 406 a and the semiconductor 406 c each include one ormore elements, or two or more elements other than oxygen included in thesemiconductor 406 b, a defect state is less likely to be formed at theinterface between the semiconductor 406 a and the semiconductor 406 band the interface between the semiconductor 406 b and the semiconductor406 c.

The semiconductor 406 a, the semiconductor 406 b, and the semiconductor406 c preferably include at least indium. In the case of using anIn-M-Zn oxide as the semiconductor 406 a, when the summation of In and Mis assumed to be 100 atomic %, the proportions of In and M arepreferably set to be less than 50 atomic % and greater than 50 atomic %,respectively, further preferably less than 25 atomic % and greater than75 atomic %, respectively. In the case of using an In-M-Zn oxide as thesemiconductor 406 b, when the summation of In and M is assumed to be 100atomic %, the proportions of In and M are preferably set to be greaterthan 25 atomic % and less than 75 atomic %, respectively, furtherpreferably greater than 34 atomic % and less than 66 atomic %,respectively. In the case of using an In-M-Zn oxide as the semiconductor406 c, when the summation of In and M is assumed to be 100 atomic %, theproportions of In and M are preferably set to be less than 50 atomic %and greater than 50 atomic %, respectively, further preferably less than25 atomic % and greater than 75 atomic %, respectively. Note that thesemiconductor 406 c may be an oxide that is of the same type as theoxide of the semiconductor 406 a. Note that the semiconductor 406 aand/or the semiconductor 406 c do/does not necessarily contain indium insome cases. For example, the semiconductor 406 a and/or thesemiconductor 406 c may be gallium oxide. Note that the atomic ratios ofthe elements included in the semiconductor 406 a, the semiconductor 406b, and the semiconductor 406 c are not necessarily simple ratios ofintegers.

As the semiconductor 406 b, an oxide having an electron affinity higherthan those of the semiconductor 406 a and the semiconductor 406 c isused. For example, as the semiconductor 406 b, an oxide having anelectron affinity higher than those of the semiconductor 406 a and thesemiconductor 406 c by 0.07 eV or higher and 1.3 eV or lower, preferably0.1 eV or higher and 0.7 eV or lower, further preferably 0.15 eV orhigher and 0.4 eV or lower is used. Note that the electron affinityrefers to an energy difference between the vacuum level and theconduction band minimum.

An indium gallium oxide has small electron affinity and a highoxygen-blocking property. Therefore, the semiconductor 406 c preferablyincludes an indium gallium oxide. The gallium atomic ratio [Ga/(In+Ga)]is, for example, higher than or equal to 70%, preferably higher than orequal to 80%, further preferably higher than or equal to 90%.

At this time, when a gate voltage is applied, a channel is formed in thesemiconductor 406 b having the highest electron affinity in thesemiconductors 406 a, 406 b, and 406 c.

Here, in some cases, there is a mixed region of the semiconductor 406 aand the semiconductor 406 b between the semiconductor 406 a and thesemiconductor 406 b. Furthermore, in some cases, there is a mixed regionof the semiconductor 406 b and the semiconductor 406 c between thesemiconductor 406 b and the semiconductor 406 c. The mixed region has alow density of defect states. For that reason, the stack including thesemiconductors 406 a, 406 b, and 406 c has a band structure where energyis changed continuously at each interface and in the vicinity of theinterface (continuous junction) (see FIG. 25). Note that boundaries ofthe semiconductor 406 a, the semiconductor 406 b, and the semiconductor406 c are not clear in some cases.

An oxide which has higher electron affinity than the semiconductors 406a and 406 c is used for the semiconductor 406 b, whereby when anelectric field is applied to the gate electrode, a channel is formed inthe semiconductor 406 b that has the highest electron affinity among thesemiconductors 406 a, 406 b, and 406 c. Here, when the channel is formedin the semiconductor 406 b, for example, the channel formation region isapart from the interface with the insulating film 412; as a result,influence of scattering at the interface with the insulating film can bereduced. Thus, the field effect mobility of the transistor can beincreased. Here, as described later, the semiconductor 406 b and thesemiconductor 406 c have the common constituent element and thusinterface scattering hardly occurs therebetween.

Furthermore, in the case where a silicon oxide film, a siliconoxynitride film, a silicon nitride oxide film, a silicon nitride film,or the like is used as the gate insulating film, silicon contained inthe gate insulating film enters the oxide semiconductor film in somecases. When silicon is included in the oxide semiconductor film, adecrease in crystallinity of the oxide semiconductor film, a decrease incarrier mobility, or the like might occur. Therefore, to reduce theimpurity concentration, for example, the silicon concentration, of thesemiconductor 406 b where the channel is formed, it is preferable thatthe semiconductor 406 c be provided between the semiconductor 406 b andthe gate insulating film. For a similar reason, to reduce influence ofan impurity diffused from the insulating film 402, it is preferable thatthe semiconductor 406 a be provided between the semiconductor 406 b andthe insulating film 402.

Moreover, the thickness of the semiconductor 406 c is preferably assmall as possible to increase the on-state current of the transistor.For example, the semiconductor 406 c is formed to include a regionhaving a thickness of less than 10 nm, preferably less than or equal to5 nm, further preferably less than or equal to 3 nm. Meanwhile, thesemiconductor 406 c has a function of blocking entry of elements otherthan oxygen (such as hydrogen and silicon) included in the adjacentinsulator into the semiconductor 406 b where a channel is formed. Forthis reason, it is preferable that the semiconductor 406 c have acertain thickness. For example, the semiconductor 406 c is formed toinclude a region having a thickness of greater than or equal to 0.3 nm,preferably greater than or equal to 1 nm, further preferably greaterthan or equal to 2 nm. The semiconductor 406 c preferably has an oxygenblocking property to suppress outward diffusion of oxygen released fromthe insulating film 402 and the like.

To improve reliability, preferably, the thickness of the semiconductor406 a is large and the thickness of the semiconductor 406 c is small.For example, the semiconductor 406 a includes a region with a thicknessof, for example, greater than or equal to 10 nm, preferably greater thanor equal to 20 nm, further preferably greater than or equal to 40 nm,still further preferably greater than or equal to 60 nm. When thethickness of the semiconductor 406 a is made large, a distance from aninterface between the adjacent insulator and the semiconductor 406 a tothe semiconductor 406 b in which a channel is formed can be large. Sincethe productivity of the device including semiconductors might bedecreased, the semiconductor 406 a has a region with a thickness of, forexample, less than or equal to 200 nm, preferably less than or equal to120 nm, further preferably less than or equal to 80 nm.

The semiconductor 406 b includes a region with a hydrogen concentrationmeasured by SIMS of higher than or equal to 1×10¹⁶ atoms/cm³ and lowerthan or equal to 2×10²⁰ atoms/cm³, preferably higher than or equal to1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³, furtherpreferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower than orequal to 1×10¹⁹ atoms/cm³, or still further preferably higher than orequal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³.It is preferable to reduce the hydrogen concentration in thesemiconductor 406 a and the semiconductor 406 c in order to reduce thehydrogen concentration in the semiconductor 406 b. The semiconductor 406a and the semiconductor 406 c each include a region with a hydrogenconcentration measured by SIMS of higher than or equal to 1×10¹⁶atoms/cm³ and lower than or equal to 2×10²⁰ atoms/cm³, preferably higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁹atoms/cm³, further preferably higher than or equal to 1×10¹⁶ atoms/cm³and lower than or equal to 1×10¹⁹ atoms/cm³, or still further preferablyhigher than or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to5×10¹⁸ atoms/cm³. Furthermore, the semiconductor 406 b includes a regionwith a nitrogen concentration measured by SIMS of higher than or equalto 1×10¹⁵ atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³,preferably higher than or equal to 1×10¹⁵ atoms/cm³ and lower than orequal to 5×10¹⁸ atoms/cm³, further preferably higher than or equal to1×10¹⁵ atoms/cm³ and lower than or equal to 1×10¹⁸ atoms/cm³, or stillfurther preferably higher than or equal to 1×10¹⁵ atoms/cm³ and lowerthan or equal to 5×10¹⁷ atoms/cm³. It is preferable to reduce thenitrogen concentration in the semiconductor 406 a and the semiconductor406 c in order to reduce the nitrogen concentration in the semiconductor406 b. The semiconductor 406 a and the semiconductor 406 c include aregion with a nitrogen concentration measured by SIMS of higher than orequal to 1×10¹⁵ atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³,preferably higher than or equal to 1×10¹⁵ atoms/cm³ and lower than orequal to 5×10¹⁸ atoms/cm³, further preferably higher than or equal to1×10¹⁵ atoms/cm³ and lower than or equal to 1×10¹⁸ atoms/cm³, or stillfurther preferably higher than or equal to 1×10¹⁵ atoms/cm³ and lowerthan or equal to 5×10¹⁷ atoms/cm³.

The above three-layer structure is an example. For example, a two-layerstructure without the semiconductor 406 a or the semiconductor 406 c maybe employed. Alternatively, a four-layer structure in which any one ofthe semiconductors described as examples of the semiconductor 406 a, thesemiconductor 406 b, and the semiconductor 406 c is provided under orover the semiconductor 406 a or under or over the semiconductor 406 cmay be employed. An n-layer structure (n is an integer of 5 or more) inwhich one or more of the semiconductors described as examples of thesemiconductor 406 a, the semiconductor 406 b, and the semiconductor 406c is/are provided at two or more of the following positions: over thesemiconductor 406 a, under the semiconductor 406 a, over thesemiconductor 406 c, and under the semiconductor 406 c may be provided.

An insulating film 408 preferably has a function of blocking oxygen. Theinsulating film 408 preferably has a function of blocking hydrogen andwater. For example, the material described as the material of theinsulating film 571 can be used as the insulating film 408.

<Method for Manufacturing Transistor>

Next, an example of a method for manufacturing the transistor 490 willbe described. The transistor 490 illustrated in FIG. 9B is provided overthe layer 625. First, the insulating film 402, a film to be thesemiconductor 406 a, and a film to be the semiconductor 406 b aresequentially formed over the layer 625. Then, first heat treatment ispreferably performed. The first heat treatment is performed at atemperature higher than or equal to 250° C. and lower than or equal to650° C., preferably higher than or equal to 300° C. and lower than orequal to 500° C. The first heat treatment is performed in an inert gasatmosphere or an atmosphere containing an oxidizing gas at 10 ppm ormore, 1% or more, or 10% or more. The first heat treatment may beperformed under a reduced pressure. Alternatively, the first heattreatment may be performed in such a manner that heat treatment isperformed in an inert gas atmosphere, and then another heat treatment isperformed in an atmosphere containing an oxidizing gas at 10 ppm ormore, 1% or more, or 10% or more in order to compensate desorbed oxygen.By the first heat treatment, crystallinity of the semiconductor 406 aand crystallinity of the semiconductor 406 b can be increased andimpurities such as hydrogen and water can be removed.

Next, a mask is provided over the film to be the semiconductor 406 b,and the semiconductor 406 b and the semiconductor 406 a are formed bydry etching or the like. As an example here, a conductor may be used asthe mask. Then, the mask is processed and used as the conductive layer416 a and the conductive layer 416 b.

Then, a film to be the semiconductor 406 c, a film to be the insulatingfilm 412, and a conductive film to be the conductive layer 404 aresequentially formed over the semiconductor 406 a, the semiconductor 406b, the conductive layer 416 a, and the conductive layer 416 b. Then, theconductive layer 404 is formed by dry etching or the like with the useof a mask. Then, the mask is removed.

Next, the insulating film 402 and the semiconductor 406 c are formed bydry etching or the like with the use of a mask. Then, the insulatingfilm 408 is formed.

The insulating film 408 can be formed by, for example, a sputteringmethod, a CVD method, an MBE method, a PLD method, an ALD method, or thelike. Preferably, the insulating film 408 is formed of aluminum oxidewith plasma including oxygen, whereby oxygen in the plasma can be addedinto side surfaces of the insulating film 402 and the insulating film412 as excess oxygen. At this point, in some cases, a mixed regioncontaining much excess oxygen is formed in the vicinity of the interfacebetween the insulating film 408 and the insulating film 402.

It is preferable to perform second heat treatment at any time after theformation of the insulator to be the insulating film 408. By the secondheat treatment, excess oxygen contained in the insulating film 402 andthe mixed region is transferred to the semiconductor 406 b through theinsulating film 402 and the semiconductor 406 a. The transfer of excessoxygen to the semiconductor 406 b causes a reduction of defects (oxygenvacancies) in the semiconductor 406 b. As for the conditions of thesecond heat treatment, the description of the first heat treatment canbe referred to.

Through the above-described process, the transistor 490 illustrated inFIGS. 9A and 9B can be manufactured.

Here, the insulating film 402 and the insulating film 412 are formed tohave a single-layer structure or a stacked-layer structure using, forexample, silicon oxide, silicon oxynitride, silicon nitride oxide,silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitrideoxide, aluminum nitride, or the like. To form the insulating film 402and the insulating film 412, a sputtering method, a CVD method(including a thermal CVD method, an MOCVD method, a PECVD method, andthe like), an MBE method, an ALD method, a PLD method, or the like canbe used. In particular, it is preferable that the insulating film beformed by a CVD method, further preferably a plasma CVD method becausecoverage can be improved. It is preferable to use a thermal CVD method,an MOCVD method, or an ALD method in order to reduce plasma damage.

To form the films to be the semiconductor 406 a, the semiconductor 406b, and the semiconductor 406 c, a sputtering method, a CVD method, anMBE method, a PLD method, an ALD method, or the like can be used, forexample. In the case where In—Ga—Zn oxide layers are formed by an MOCVDmethod as the films to be the semiconductor 406 a, the semiconductor 406b, and the semiconductor 406 c, trimethylindium, trimethylgallium,dimethylzinc, and the like may be used as the source gases. The sourcegases are not limited to the above combination, and triethylindium orthe like may be used instead of trimethylindium. Alternatively,triethylgallium or the like may be used instead of trimethylgallium.Still alternatively, diethylzinc or the like may be used instead ofdimethylzinc. As a dry etching gas for the semiconductor 406 a, thesemiconductor 406 b, and the semiconductor 406 c, a mixed gas of methane(CH₄) and argon (Ar), or the like can be used, for example.

As for materials and formation method used for the conductive layer 416a and the conductive layer 416 b, the description of the conductivelayer 542 or the like can be referred to, for example.

<Variation of Transistor>

FIG. 26A is a top view of the transistor 490. FIG. 26B illustrates crosssections along the dashed-dotted lines C1-C2 and C3-C4 in FIG. 26A.

The transistor 490 illustrated in FIG. 26B includes the insulating film402, the semiconductor 406 a over the insulating film 402, thesemiconductor 406 b over the semiconductor 406 a, the conductive layer416 a and the conductive layer 416 b which are in contact with the sidesurface of the semiconductor 406 a and the top and side surfaces of thesemiconductor 406 b, the semiconductor 406 c which is in contact withthe side surface of the semiconductor 406 a, the top and side surfacesof the semiconductor 406 b, the top and side surfaces of the conductivelayer 416 a, and the top and side surfaces of the conductive layer 416b, the insulating film 412 over the semiconductor 406 c, and theconductive layer 404 over the insulating film 412.

FIG. 27A is a top view of the transistor 490. FIG. 27B arecross-sectional views along the dashed-dotted lines G1-G2 and G3-G4 inFIG. 27A.

The transistor 490 illustrated in FIGS. 27A and 27B includes theinsulating film 402, the semiconductor 406 a over a projection portionof the insulating film 402, the semiconductor 406 b over thesemiconductor 406 a, the semiconductor 406 c over the semiconductor 406b, the conductive layers 416 a and 416 b which are in contact with thesemiconductor 406 a, the semiconductor 406 b, and the semiconductor 406c and are provided with a distance therebetween, the insulating film 412over the semiconductor 406 c, the conductive layer 416 a, and theconductive layer 416 b, the conductive layer 404 over the insulatingfilm 412, and the insulating film 408 over the conductive layer 416 a,the conductive layer 416 b, the insulating film 412, and the conductivelayer 404.

The insulating film 412 is in contact with at least the side surface ofthe semiconductor 406 b in the G3-G4 cross section. In the G3-G4 crosssection, the conductive layer 404 faces the top and side surfaces of thesemiconductor 406 b with at least the insulating film 412 positionedtherebetween.

FIG. 28A is an example of a top view of the transistor 490. FIG. 28Billustrates an example of a cross-sectional view along the dashed-dottedlines E1-E2 and E3-E4 in FIG. 28A. Note that some components such as aninsulator are omitted in FIG. 28A for easy understanding.

The transistor 490 illustrated in FIGS. 28A and 28B includes theinsulating film 402 over the layer 625, the semiconductor 406 a over theinsulating film 402, the semiconductor 406 b over the semiconductor 406a, the conductive layer 416 a and the conductive layer 416 b which arein contact with the top surface of the semiconductor 406 b, aninsulating film 591 b which is in contact with the side surface of thesemiconductor 406 a, the side surface of the semiconductor 406 b, thetop and side surfaces of the conductive layer 416 a, and the top andside surfaces of the conductive layer 416 b, the semiconductor 406 c incontact with the top surface of the semiconductor 406 b, the insulatingfilm 412 over the semiconductor 406 c, the conductive layer 404 over theinsulating film 412, and the insulating film 408 which is in contactwith the top and side surfaces of the conductive layer 404 and a topsurface of the insulating film 591 b. For the material and the like ofthe insulating film 591 b, the description of the insulating film 581may be referred to, for example.

FIG. 29A is an example of a top view of the transistor 490. FIG. 29Billustrates an example of a cross-sectional view along the dashed-dottedlines F1-F2 and F3-F4 in FIG. 29A. Note that some components such as aninsulator are omitted in FIG. 29A for easy understanding.

The transistor 490 illustrated in FIGS. 29A and 29B does not include theconductive layer 416 a and the conductive layer 416 b, where aconductive layer 426 a and a conductive layer 426 b are in contact withthe semiconductor 406 b. In this case, a low-resistance region 423 a (alow-resistance region 423 b) is preferably provided in a region incontact with at least the conductive layer 426 a and the conductivelayer 426 b in the semiconductor 406 b and/or the semiconductor 406 a.The low-resistance region 423 a and the low-resistance region 423 b maybe formed in such a manner that, for example, the conductive layer 404or the like is used as a mask and impurities are added to thesemiconductor 406 b and/or the semiconductor 406 a. The conductive layer426 a and the conductive layer 426 b may be provided in holes (portionswhich penetrate) or recessed portions (portions which do not penetrate)of the semiconductor 406 b. When the conductive layer 426 a and theconductive layer 426 b are provided in holes or recessed portions of thesemiconductor 406 b, contact areas between the conductive layers 426 aand 426 b and the semiconductor 406 b are increased; thus, the adverseeffect of the contact resistance can be decreased. In other words, theon-state current of the transistor can be increased.

FIGS. 30A and 30B are a top view and a cross-sectional view of thetransistor 490 of one embodiment of the present invention. FIG. 30A isthe top view, and FIG. 30B is the cross-sectional view along thedashed-dotted lines 11-12 and 13-14 in FIG. 30A. Note that somecomponents are omitted in the top view of FIG. 30A for simplification ofthe drawing.

The transistor 490 illustrated in FIGS. 30A and 30B includes aconductive layer 604 over the layer 625, an insulating film 612 over theconductive layer 604, a semiconductor 606 a over the insulating film612, a semiconductor 606 b over the semiconductor 606 a, a semiconductor606 c over the semiconductor 606 b, a conductive layer 616 a and aconductive layer 616 b which are in contact with the semiconductor 606a, the semiconductor 606 b, and the semiconductor 606 c and are providedwith a distance therebetween, and an insulating film 618 over thesemiconductor 606 a, the conductive layer 616 b, and the conductivelayer 616 c. The conductive layer 604 faces a bottom surface of thesemiconductor 606 b with the insulating film 612 positionedtherebetween. The insulating film 612 may have a projection portion. Thesemiconductor 606 a may be omitted. The insulating film 618 may beomitted.

The semiconductor 606 b has a function of a channel formation region ofthe transistor 490. The conductive layer 604 has a function of a firstgate electrode (also referred to as a front gate electrode) of thetransistor 490. The conductive layer 616 a and the conductive layer 616b have a function of a source electrode and a drain electrode of thetransistor 490.

The insulating film 618 is preferably an insulator containing excessoxygen.

For the conductive layer 604, the description of the conductive layer404 is referred to. For the insulating film 612, the description of theinsulating film 412 is referred to. For the semiconductor 606 a, thedescription of the semiconductor 406 c is referred to. For thesemiconductor 606 b, the description of the semiconductor 406 b isreferred to. For the semiconductor 606 c, the description of thesemiconductor 406 a is referred to. For the conductive layer 616 a andthe conductive layer 616 b, the description of the conductive layer 416a and the conductive layer 416 b is referred to. For the insulating film618, the description of the insulating film 402 is referred to.

Thus, the transistor 490 in FIGS. 30A and 30B might be regarded as onlydifferent from the transistor 490 in FIGS. 27A and 27B in part of thestructure. Specifically, the structure of the transistor 490 in FIGS.30A and 30B is similar to the structure of the transistor 490 withoutthe conductive layer 404 in FIGS. 27A and 27B. Thus, for the transistor490 in FIGS. 30A and 30B, the description of the transistor 490 in FIGS.27A and 27B can be referred to as appropriate.

The transistor 490 may include a conductor which overlaps with thesemiconductor 606 b with the insulating film 618 provided therebetween.The conductor functions as a second gate electrode of the transistor490. For the conductor, the description of the conductive layer 413 isreferred to. Further, an s-channel structure may be formed using thesecond gate electrode.

Over the insulating film 618, a display element may be provided. Forexample, a pixel electrode, a liquid crystal layer, a common electrode,a light-emitting layer, an organic EL layer, an anode, a cathode, or thelike may be provided. The display element is connected to the conductivelayer 616 a or the like, for example.

Over the semiconductor, an insulator that can function as a channelprotective film may be provided. Alternatively, as illustrated in FIGS.31A and 31B, an insulating film 619 may be provided between thesemiconductor 606 c and the conductive layers 616 a and 616 b. In thatcase, the conductive layer 616 a (the conductive layer 616 b) and thesemiconductor 606 c are connected to each other through an opening inthe insulating film 619. For the insulating film 619, the description ofthe insulating film 618 may be referred to.

In FIG. 30B and FIG. 31B, a conductive layer 613 may be provided overthe insulating film 618. Examples of that case are illustrated in FIGS.32A and 32B. For the conductive layer 613, the description of theconductive layer 413 is referred to. A potential or signal which is thesame as that supplied to the conductive layer 604 or a potential orsignal which is different from that supplied to the conductive layer 604may be supplied to the conductive layer 613. For example, by supplying aconstant potential to the conductive layer 613, the threshold voltage ofthe transistor 490 may be controlled. In other words, the conductivelayer 613 can function as a second gate electrode.

[Example of Semiconductor Device]

FIG. 10 illustrates an example in which the device 500 of one embodimentof the present invention is a semiconductor device. FIG. 13A is anenlarged view of a region surrounded by the dashed-dotted line in FIG.10. FIG. 13B illustrates an example in which the conductive layers 511to 513 and the conductive layers 542 to 544 in FIG. 13A are each formedof stacked two layers.

FIG. 11 illustrates a cross section of the device 500 on a planesubstantially perpendicular to the cross section in FIG. 10. Here, thecross section in FIG. 10 is along the line segment A1-A2, and the crosssection in FIG. 11 is along the line segment A3-A4.

FIG. 12 illustrates an example, which is different from that in FIG. 11,of the cross section of the device 500 on a plane substantiallyperpendicular to the cross section in FIG. 10.

The device 500 illustrated in FIG. 10 includes the layer 621, the layer622, and the layer 620 that connects the layer 621 to the layer 622. Thelayer 621 includes a transistor 491, a transistor 492, and a transistor493 provided over a substrate 400, and the layer 622 includes thetransistor 490 and the capacitor 150.

<Layer 621>

The layer 621 will be described. The transistor 491 includes a channelformation region 407, an insulating film 462 over the substrate 400, aconductive layer 454 over the insulating film 462, an insulating film470 in contact with a side surface of the conductive layer 454, a region476 positioned in the substrate 400 and overlapping with neither theconductive layer 454 nor the insulating film 470, and a region 474positioned in the substrate 400 and overlapping with the insulating film470. The region 476 is a low-resistance layer and preferably functionsas a source or drain region of the transistor 491. The region 474preferably functions as a lightly doped drain (LDD) region.

The transistor 491 may be either a p-channel transistor or an n-channeltransistor, and an appropriate transistor is used depending on thecircuit configuration or the driving method.

The substrate 400 preferably include, for example, a semiconductor suchas a silicon-based semiconductor, further preferably single crystalsilicon. Alternatively, a material including germanium (Ge), silicongermanium (SiGe), gallium arsenide (GaAs), gallium aluminum arsenide(GaAlAs), or the like may be contained. Alternatively, silicon havingcrystal lattice distortion may be contained. Alternatively, thetransistor 491 may be a high-electron-mobility transistor (HEMT) withGaAs and AlGaAs or the like.

The region 476 preferably contains an element which imparts n-typeconductivity, such as phosphorus, or an element which imparts p-typeconductivity, such as boron.

The conductive layer 454 can be formed using a semiconductor materialsuch as silicon containing the element that imparts n-type conductivity,such as phosphorus, or the element that imparts p-type conductivity,such as boron, or a conductive material such as a metal material, analloy material, or a metal oxide material. It is particularly preferableto use a high-melting-point material that has both heat resistance andconductivity, such as tungsten or molybdenum, and further preferable touse tungsten.

The transistor 491 illustrated in FIG. 10 is an example in which elementisolation is performed by a shallow trench isolation (STI) method or thelike. Specifically, in FIG. 10, the transistor 491 is electricallyisolated by element isolation using an element isolation region 460 thatis formed in such a manner that an insulator including silicon oxide orthe like is buried in a trench formed in the substrate 400 by etching orthe like and then is partly removed by etching or the like.

In a projection portion of the substrate 400 which is positioned in aregion other than the trench, the regions 476 and 474 and the channelformation region 407 of the transistor 491 are provided. Furthermore,the transistor 491 includes the insulating film 462 that covers thechannel formation region 407 and the conductive layer 454 that overlapswith the channel formation region 407 with the insulating film 462positioned therebetween.

In the transistor 491, a side portion and an upper portion of theprojection portion in the channel formation region 407 overlap with theconductive layer 454 with the insulating film 462 positionedtherebetween, so that carriers flow in a wide area including the sideportion and the upper portion of the channel formation region 407.Therefore, an area over the substrate occupied by the transistor 491 isreduced, and the number of transferred carriers in the transistor 491 isincreased. As a result, the on-state current of the transistor 491 isincreased and the field-effect mobility of the transistor 491 isincreased. Suppose the length in the channel width direction (channelwidth) of the projection portion in the channel formation region 407 isW, and the thickness of the projection portion in the channel formationregion 407 is T. When the aspect ratio (T/W) of the thickness T to thechannel width W is high, a region where carriers flow becomes larger.Thus, the on-state current of the transistor 491 can be furtherincreased and the field-effect mobility of the transistor 491 can befurther increased.

Note that when the transistor 491 is formed using a bulk semiconductorsubstrate, the aspect ratio is desirably 0.5 or more, further desirably1 or more.

The transistor 491 does not necessarily include the projection portionin the substrate 400 that is illustrated in FIG. 23A. As illustrated inFIG. 23B, the transistor 491 may be formed using a silicon on insulator(SOI) substrate.

For the transistor 492 and the transistor 493, the description of thetransistor 491 may be referred to.

An insulating film 464 a and an insulating film 464 b are provided so asto cover the transistor 491, the transistor 492, and the transistor 493.

A conductive layer 541 and the like are provided so as to embed anopening in the insulating film 464 a and the insulating film 464 b. Theconductive layer 541 and the like are preferably provided over and incontact with the conductive layer 454, the region 476, or the like ofthe transistor 491 or the transistor 492.

The insulating film 581, the conductive layer 511, and the like areprovided over the conductive layer 541 and the like. The conductivelayer 511 and the like are preferably connected to a conductive layersuch as the conductive layer 541.

The insulating film 582, the conductive layer 542, and the like areprovided over the conductive layer 511 and the like. The conductivelayer 542 and the like are preferably provided over and in contact withthe conductive layer 511 and the like.

The insulating film 583, the conductive layer 512, and the like areprovided over the conductive layer 542 and the like. The conductivelayer 512 and the like are preferably connected to a conductive layersuch as the conductive layer 542.

Note that in the layer 621, the insulating film 582, the insulating film583, the conductive layer 542, and the conductive layer 512 may beomitted, for example. In that case, the conductive layer 511 and thelike may be in contact with the layer 620, for example. Alternatively,an insulating film or a conductive film may be further stacked betweenthe insulating film 581 and the insulating film 582.

For the insulating film 464 a and the insulating film 464 b, thedescription of the insulating film 581 can be referred to, for example.For the conductive layer 541, the description of the conductive layer542 can be referred to, for example.

<Layer 622>

The layer 622 will be described. As for the transistor 490 included inthe layer 622, FIGS. 9A and 9B and FIG. 26A to FIG. 32B may be referredto.

The layer 622 includes an insulating film 591 over the transistor 490.The conductive layer 544 and the like are provided so as to embed anopening in the insulating film 591. The conductive layer 544 and thelike are preferably connected to a conductive layer included in thelayer 620 and the conductive layers 404, 416 a, and 416 b and the likeincluded in the transistor 490.

An insulating film 592, the conductive layer 514, and the like areprovided over the insulating film 591, the conductive layer 544, and thelike. The conductive layer 514 and the like are preferably connected tothe conductive layer 544 and the like. A conductive layer 545 isprovided in contact with a top surface of the conductive layer 514 andthe like so as to embed an opening in the insulating film 592.

An insulating film 593, a conductive layer 515, and the like areprovided over the insulating film 592, the conductive layer 545, and thelike. The conductive layer 515 and the like are preferably connected tothe conductive layer 545 and the like. A conductive layer 546 isprovided in contact with a top surface of the conductive layer 515 orthe like so as to embed an opening in the insulating film 593.

The capacitor 150 is provided over the conductive layer 546 and theinsulating film 593. The capacitor includes a pair of electrodes whichare a conductive layer 516 and a conductive layer 517 and an insulatingfilm 572 which is a dielectric. A conductive layer 516 b and the likemay be included over the conductive layer 546, the insulating film 593,and the like.

The conductive layer 516 is in contact with the conductive layer 546.The conductive layer 517 is electrically connected to a conductive layerprovided over an insulating film 594 through a conductive layer 547provided over the conductive layer 517. The conductive layer 516 and thelike are in contact with a conductive layer 547 and the like.

The insulating film 572 can be formed to have a single-layer structureor a stacked-layer structure using, for example, one or more of aninsulating film containing what is called a high-k material such asaluminum oxide, hafnium oxide, tantalum oxide, zirconium oxide, leadzirconate titanate (PZT), strontium titanate (SrTiO₃), or (Ba,Sr)TiO₃(BST). Alternatively, aluminum oxide, bismuth oxide, germanium oxide,niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttriumoxide, zirconium oxide, or gallium oxide may be added to the insulatingfilm, for example. Alternatively, the insulating film may be subjectedto nitriding treatment to be an oxynitride film. A layer of siliconoxide, silicon oxynitride, or silicon nitride may be stacked over theinsulating film.

For the formation conditions of the insulating film 572, the descriptionof the insulating film 571 may be referred to, for example.

An insulating film 595, a conductive layer 518, and the like areprovided over the insulating film 594. The conductive layer 518 and thelike are preferably connected to the conductive layer 547 b and thelike. A conductive layer 548 is provided in contact with a top surfaceof the conductive layer 518 or the like so as to embed an opening in theinsulating film 595.

An insulating film 599, a conductive layer 519, and the like areprovided over the insulating film 595. In the insulating film 599, anopening reaching the conductive layer 519 or the like may be provided.

The device 500 illustrated in FIG. 14 is different from that illustratedin FIG. 10 in the shapes of the transistor 490 and the capacitor 150.Here, an example of the capacitor 150 different from that in FIG. 10 isillustrated in FIG. 14. The capacitor 150 illustrated in FIG. 14 is, forexample, formed in such a manner that a columnar opening is provided inthe insulating film 593, the conductive layer 516 is provided on aninner wall of the opening, the insulating film 572 is provided over theconductive layer 516, and the conductive layer 517 is provided over theinsulating film 572 so as to be embedded. By using the conductive layerprovided on the inner wall of the columnar opening as one electrode ofthe capacitor, the electrode area can be increased, leading to a highercapacitance.

For the transistor 490 illustrated in FIG. 14, FIGS. 28A and 28B arereferred to.

<Layer 620>

The layer 620 includes a wiring layer that connects the layer 621 to thelayer 622. For the conductive layer 543, the conductive layer 513, theconductive layer 413, the insulating films 584 to 586, and the like inthe layer 620 illustrated in FIG. 10, the description of the layer 620illustrated in FIGS. 1A to 4 can be referred to.

The insulating film 584, the conductive layer 543, and the like areprovided over the insulating film 583. The conductive layer 512 or thelike included in the layer 621 is connected to the conductive layer 543and the like included in the layer 620. The conductive layer 513 and thelike are provided over the insulating film 571, the projection portionof the conductive layer 543, and the like. The conductive layer 413 isprovided over the insulating film 571. The conductive layer 513 and thelike are connected to the conductive layer 544 and the like included inthe layer 622. As illustrated in FIG. 10, the conductive layer 413included in the layer 620 may be positioned under the transistor 490with the insulating film 402 positioned therebetween. In this case, theconductive layer 413 preferably functions as an electrode of thetransistor 490, for example.

The insulating film 402 is positioned between the conductive layer 413and the semiconductor 406 a.

The insulating film 402 may be formed to have, for example, asingle-layer structure or a stacked-layer structure including, forexample, an insulator containing boron, carbon, nitrogen, oxygen,fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon,gallium, germanium, yttrium, zirconium, lanthanum, neodymium, hafnium,or tantalum. For example, the insulating film 402 preferably includessilicon oxide or silicon oxynitride.

For example, the insulating film 402 may be formed with a stacked-layerstructure in which a film including hafnium oxide is sandwiched betweenfilms including silicon oxide.

Here, the conductive layer 513 and the conductive layer 413 preferablyinclude a first region that is provided over a region where theconductive layer 543 includes the projection portion and a second regionthat is provided over a region where it does not include the projectionportion. A bottom surface of the second region is more flat than that ofthe first region. FIG. 10, FIG. 11, and the like illustrate an examplein which the channel region of the transistor 490 is provided over thesecond region of the conductive layer 413. Here, for example, there is acase in which charge is captured at a surface of a conductive layer oran interface between a conductive layer and an insulating film. In sucha case, it is sometimes preferable to make a bottom surface of theconductive layer flat because the influence on the channel region can beevened out.

For the insulating film 571, a material that does not easily transmitoxygen is preferably used. The materials given above have excellentbarrier properties against oxygen as well as hydrogen and water. The useof any of the materials can inhibit diffusion of oxygen released whenthe insulating film 402 is heated to the layers under the insulatingfilm 571. Consequently, the amount of oxygen that is released from theinsulating film 402 and is likely to be supplied to the semiconductorlayer of the transistor 490 can be increased.

In this manner, with the insulating film 571, the concentration ofhydrogen or water contained in each layer provided under the insulatingfilm 571 is reduced, the hydrogen or water is removed, or degasificationis prevented, and diffusion of hydrogen or water into the transistor 490is prevented. Thus, the amount of hydrogen or water contained in theinsulating film 402 or the each layer in the transistor 490 can beextremely low. The concentration of hydrogen contained in the insulatingfilm 402, a semiconductor 406 of the transistor 490, or the insulatingfilm 412 can be reduced to, for example, lower than 5×10¹⁸ cm⁻³,preferably lower than 1×10¹⁸ cm³, further preferably lower than 3×10¹⁷cm³.

[Example of Circuit]

Next, an example of a circuit that can be used in the device of oneembodiment of the present invention will be described.

FIG. 15A shows an example of a circuit including three transistors andone capacitor. Here, a case in which the transistor 490, the transistor491, and the transistor 492 described with reference to FIG. 10 and thelike are used as three transistors and the capacitor 150 is used as acapacitor is considered.

Here, the transistors used in the circuit of FIG. 15A are preferablyprovided in the layer 621 or 622 in the cross section of the deviceillustrated in FIG. 10, for example. In particular, when the transistors491 and 492 are provided in the layer 621 and the transistor 490 isprovided in the layer 622 with the layer 620 sandwiched between thelayers 621 and 622, the transistors 490 to 492 can show excellentcharacteristics. The capacitor 150 may be provided in any of the layers620 to 622.

An example of a device including the circuit illustrated in FIG. 15A canhave the structure illustrated in FIG. 10. In FIG. 10, the transistor491 is formed in the layer 621, and the transistor 490 and the capacitorare formed in the layer 622.

In FIG. 15A, one of a source and a drain of the transistor 490 isconnected to a gate electrode of the transistor 491 and one electrode ofthe capacitor 150 through a floating node (FN). The other of the sourceand the drain of the transistor 490 is connected to one of a source anda drain of the transistor 492. These connections are preferably made viaa conductive layer provided in the layer 620. One of the sourceelectrode and the drain electrode of the transistor 491 is connected to,for example, a terminal SL connected to the layer 622 through aconductive layer or the like provided in the layer 620. The other of thesource and the drain of the transistor 491 is connected to the other ofthe source and the drain of the transistor 492.

In FIG. 10, the conductive layer 454 that is the gate electrode of thetransistor 491 included in the layer 621 is connected to the conductivelayer 516 that is the electrode of the capacitor 150 included in thelayer 622 through conductive layers such as the conductive layers 543and 513 provided in the layer 620. In the layer 622, the conductivelayer 516 is connected to the conductive layer 416 b that is one of asource electrode and a drain electrode of the transistor 490. One of thesource and the drain of the transistor 492 is connected to theconductive layer 416 a that is one of the source electrode and the drainelectrode of the transistor 490 through the conductive layers providedin the layer 620 and the like.

For example, one of the source electrode and the drain electrode of thetransistor 491 is connected to the terminal SL connected to the layer622 through a conductive layer or the like provided in the layer 620.

Here, a transistor provided in the layer 621 in FIG. 10, such as thetransistor 493, may be used in a peripheral circuit, such as a drivercircuit or a converter, connected to the circuit illustrated in FIGS.15A to 15C or the like.

The device 500 illustrated in FIG. 22 is different from that in FIG. 10in that the capacitor 150 is positioned in the layer 621, under thetransistor 490 and over the transistor 491, and in that an insulatingfilm 631, an insulating film 632, a conductive layer 529, and aconductive layer 530 are provided between the insulating films 583 and584.

In the device 500 illustrated in FIG. 22, the conductive layer 512functions as one electrode of the capacitor 150. The device 500 includesthe conductive layer 529 or the like that is embedded in the insulatingfilm 631 and functions as a plug. Furthermore, the device 500 includesthe insulating film 632 provided over the insulating film 631 and theconductive layer 530, a conductive layer 530 b, and the like which areprovided over the conductive layer 529 and the like and the insulatingfilm 631 and connected to the conductive layer 529 and the like. Here,the insulating film 631 functions as a dielectric of the capacitor 150.The conductive layer 530 b functions as the other electrode of thecapacitor 150. The conductive layer 512 is connected to the conductivelayer 543 included in the layer 620 through the conductive layer 529 andthe conductive layer 530. The conductive layer 543 is connected to aconductive layer included in the layer 622 through the conductive layer513.

Although FIG. 10 illustrates an example in which the capacitor isprovided in the layer 622, the capacitor 150 may be provided in thelayer 620 as illustrated in FIG. 21. The device 500 illustrated in FIG.21 is an example in which the capacitor 150 illustrated in FIG. 20C isused.

FIG. 21 illustrates an example of the device 500 including the circuitillustrated in FIG. 15B. Since the transistor 492 is not included in thecircuit in FIG. 15B, the circuit area can be reduced compared with thecase of employing the circuit in FIG. 15A.

Here, in FIG. 21, an insulating film 590 may be included between theinsulating film 571 and the insulating film 584 as illustrated in FIG.49. The capacitor 150 includes the conductive layer 522, the conductivelayer 523, and the insulating film 590 and the insulating film 571 whichare sandwiched between the two conductive layers. As the insulating film590, an insulating film containing silicon oxide is preferably used, forexample.

FIG. 48 illustrates another example of the device 500 including thecircuit illustrated in FIG. 15B.

The device 500 illustrated in FIG. 48 is different from that illustratedin FIG. 10 in including the insulating film 588, an insulating film 589,a conductive layer 527 and the like, and a conductive layer 528 and thelike between the insulating film 586 and the insulating film 402. Inaddition, the device 500 illustrated in FIG. 48 is different from thatillustrated in FIG. 10 in that the capacitor 150 is positioned in thelayer 620 under the transistor 490.

The device 500 illustrated in FIG. 48 includes the conductive layer 527and the like that are embedded in the insulating film 588 and functionas plugs. Furthermore, the device 500 includes the insulating film 589provided over the insulating film 588 and the conductive layer 528 andthe like which are provided over the conductive layer 527 and the likeand the insulating film 588 and connected to the conductive layer 527and the like.

In FIG. 48, the conductive layer 454 included in the transistor 491provided in the layer 621 is connected to the conductive layer 521provided in the layer 620. The conductive layer 521 functions as oneelectrode of the capacitor 150. A conductive layer 524 provided in thelayer 620 functions as the other electrode of the capacitor. Theconductive layer 416 b included in the transistor 490 provided in thelayer 622 is connected to the conductive layer 521 through theconductive layer 523 and the conductive layer 522 provided in the layer620. One of a source and a drain of the transistor 491 is connected tothe conductive layer 416 a that is one of the source electrode and thedrain electrode of the transistor 490 through a conductive layer or thelike provided in the layer 620.

The other of the source electrode and the drain electrode of thetransistor 491 is connected to, for example, the terminal SL connectedto the layer 622 through a conductive layer or the like provided in thelayer 620.

FIG. 48 illustrates an example in which the conductive layer 416 b andthe conductive layer 523 included in the layer 620 are connected to eachother through the conductive layer 527, the conductive layer 528, andthe conductive layer 544. Here, the conductive layer 544 is provided soas to penetrate the insulating film 591, the conductive layer 416 b, theinsulating film 402, and the like.

As illustrated in FIG. 24, the conductive layer 416 b included in thetransistor 490 may be used as one electrode of the capacitor 150, and astacked-layer film of the semiconductor 406 c and the insulating film412 may be used as a dielectric. In that case, the other electrode ofthe capacitor 150 is preferably formed using the same material or thelike and at the same time as the conductive layer 404 included in thetransistor 490.

<Circuit Operation>

The circuits illustrated in FIGS. 15A to 15C and FIG. 16A can functionas memory devices.

The operation of the circuit in FIG. 15B will be described.

The circuit in FIG. 15B has a feature that the potential of the gate ofthe transistor 491 can be retained, and thus enables writing, retaining,and reading of data as follows.

Writing and retaining of data are described. First, the potential of aterminal WWL is set to a potential at which the transistor 490 is on, sothat the transistor 490 is turned on. Accordingly, the potential of aterminal BL is supplied to the node FN where the gate of the transistor491 and the one electrode of the capacitor 150 are electricallyconnected to each other. That is, a predetermined charge is supplied tothe gate of the transistor 491 (writing). Here, one of two kinds ofcharges providing different potential levels (hereinafter referred to asa low-level charge and a high-level charge) is supplied. After that, thepotential of the terminal WWL is set to a potential at which thetransistor 490 is off. Thus, the charge is held at the node FN(retaining).

By using an oxide semiconductor as a semiconductor layer, the transistor490 can have a low off-state current, whereby the charge of the node FNis retained for a long time.

Next, reading of data is described. An appropriate potential (a readingpotential) is supplied to the terminal CL while a predeterminedpotential (a constant potential) is supplied to the terminal BL, wherebythe potential of the terminal SL changes in accordance with the amountof charge retained in the node FN. This is because in the case of usingan n-channel transistor as the transistor 491, an apparent thresholdvoltage V_(th) _(_) _(H) at the time when the high-level charge is givento the gate of the transistor 491 is lower than an apparent thresholdvoltage V_(th) _(_) _(L) at the time when the low-level charge is givento the gate of the transistor 491. Here, an apparent threshold voltagerefers to the potential of the terminal CL which is needed to make thetransistor 491 be in “on state.” Thus, the potential of the terminal CLis set to a potential V₀ which is between V_(th) _(_) _(H) and V_(th)_(_) _(L), whereby charge supplied to the node FN can be determined. Forexample, in the case where the high-level charge is supplied to the nodeFN in writing and the potential of the terminal CL is V₀ (>V_(th) _(_)_(H)), the transistor 491 is brought into “on state.” In the case wherethe low-level charge is supplied to the node FN in writing, even whenthe potential of the terminal CL is V₀ (<V_(th) _(_) _(L)), thetransistor 491 still remains in “off state.” Thus, the data retained inthe node FN can be read by determining the potential of the terminal SL.

Note that in the case where memory cells are arrayed, it is necessarythat data of a desired memory cell be read in read operation. In amemory cell from which data is not read, the terminal CL is suppliedwith a potential at which the transistor 491 is in an “off state”regardless of the charge supplied to the node FN, that is, a potentiallower than V_(th) _(_) _(H) so that data can be read from a desiredmemory cell. Alternatively, in a memory cell from which data is notread, the terminal CL is supplied with a potential at which thetransistor 491 is brought into an “on state” regardless of the chargesupplied to the node FN, that is, a potential higher than V_(th) _(_)_(L) so that data can be read from a desired memory cell.

In the circuit illustrated in FIG. 15A, writing and retaining of datacan be carried out in a manner similar to that in FIG. 15B. In FIG. 15A,the transistor 492 is included. To prevent reading of data from theother memory cells, the transistor 492 may be brought into an “offstate”. Thus, leakage current from the terminal BL to the terminal SLcan be suppressed in some cases. To prevent reading of data from theother memory cells in reading, a potential at which the transistor 492is in an “off state” may be input to a terminal RWL; it is not necessaryin some cases to supply a high potential to the terminal CL.

When including a transistor using an oxide semiconductor and having anextremely low off-state current, the semiconductor device describedabove can retain stored data for a long time. In other words, powerconsumption of the semiconductor device can be reduced because refreshoperation becomes unnecessary or the frequency of refresh operation canbe extremely low. Moreover, stored data can be retained for a long timeeven when power is not supplied (note that a potential is preferablyfixed).

In the semiconductor device, high voltage is not needed for writing dataand deterioration of elements is less likely to occur. Unlike in aconventional nonvolatile memory, for example, it is not necessary toinject and extract electrons into and from a floating gate; thus, aproblem such as deterioration of an insulator is not caused. That is,the semiconductor device of one embodiment of the present invention doesnot have a limit on the number of times data can be rewritten, which isa problem of a conventional nonvolatile memory, and the reliabilitythereof is drastically improved. Furthermore, data is written dependingon the on/off state of the transistor, whereby high-speed operation canbe achieved.

The semiconductor device in FIG. 15C is different from the semiconductordevice in FIG. 15B in not including the transistor 491. Also in thiscase, data can be written and retained in a manner similar to that ofthe semiconductor device in FIG. 15B.

Reading of data in the semiconductor device in FIG. 15C is described.When the transistor 490 is brought into on state, the terminal BL whichis in a floating state and the capacitor 150 are brought intoconduction, and the charge is redistributed between the terminal BL andthe capacitor 150. As a result, the potential of the terminal BL ischanged. The amount of change in the potential of the terminal BL variesdepending on the potential of the one electrode of the capacitor 150 (orthe charge accumulated in the capacitor 150).

For example, the potential of the terminal BL after the chargeredistribution is (C_(B)×V_(B0) C×V)/(C_(B)+C), where V is the potentialof the one electrode of the capacitor 150, C is the capacitance of thecapacitor 150, C_(B) is the capacitance component of the terminal BL,and V_(B0) is the potential of the terminal BL before the chargeredistribution. Thus, it can be found that, assuming that the memorycell is in either of two states in which the potential V of the oneelectrode of the capacitor 150 is V₁ and V₀ (V₁>V₀), the potential ofthe terminal BL in the case of retaining the potential V₁(=(C_(B)×V_(B0)+C×V₁)/(C_(B)+C)) is higher than the potential of theterminal BL in the case of retaining the potential V₀(=(C_(B)×V_(B0)+C×V₀)/(C_(B)+C)).

Then, by comparing the potential of the terminal BL with a predeterminedpotential, data can be read.

In this case, a transistor provided in the layer 621, such as thetransistor 493 illustrated as an example in FIG. 10 or the like, may beused in a peripheral circuit for driving the memory cell.

A circuit diagram in FIG. 16B shows a configuration of a CMOS circuit inwhich a p-channel transistor 2200 and an n-channel transistor 2100 areconnected to each other in series and in which gates of them areconnected to each other. The device 500 illustrated in FIG. 1A to FIG. 4may include the circuit illustrated in FIG. 16B. In such a case, forexample, it is preferable to provide the transistor 2200 in the layer621, provide the transistor 2100 in the layer 622, and use a conductivelayer provided in the layer 620 for the connection of source, drain, andgate electrodes of the transistors.

A circuit diagram in FIG. 16C shows a configuration in which sources ofthe transistors 2100 and 2200 are connected to each other and drains ofthe transistors 2100 and 2200 are connected to each other. With such aconfiguration, the transistors can function as an analog switch. Thedevice 500 illustrated in FIG. 1A to FIG. 4 may include the circuitillustrated in FIG. 16C. In such a case, for example, it is preferableto provide the transistor 2200 in the layer 621, provide the transistor2100 in the layer 622, and use a conductive layer provided in the layer620 for the connection of source, drain, and gate electrodes of thetransistors.

FIG. 16A illustrates an example of a circuit that can be used in thedevice of one embodiment of the present invention.

The circuit in FIG. 16A includes a capacitor 660 a, a capacitor 660 b, atransistor 661 a, a transistor 661 b, a transistor 662 a, a transistor662 b, an inverter 663 a, an inverter 663 b, a wiring BL, a wiring BLB,a wiring WL, a wiring CL, and a wiring GL.

The circuit in FIG. 16A is a memory cell in which the inverter 663 a andthe inverter 663 b are connected in a ring to form a flip-flop. A nodeto which an output signal of the inverter 663 b is output is a node VN1,and a node to which an output signal of the inverter 663 a is output isa node VN2. The memory cells are provided in a matrix, whereby a memorydevice (memory cell array) can be formed.

One of a source and a drain of the transistor 662 a is electricallyconnected to the wiring BL, the other of the source and the drainthereof is electrically connected to the node VN1, and a gate thereof iselectrically connected to the wiring WL. One of a source and a drain ofthe transistor 662 b is electrically connected to the node VN2, theother of the source and the drain thereof is electrically connected tothe wiring BLB, and a gate thereof is electrically connected to thewiring WL.

One of a source and a drain of the transistor 661 a is electricallyconnected to the node VN1, the other of the source and the drain thereofis electrically connected to one of electrodes of the capacitor 660 a,and a gate thereof is electrically connected to the wiring GL. A nodebetween the other of the source and the drain of the transistor 661 aand the one of electrodes of the capacitor 660 a is a node NVN1. One ofa source and a drain of the transistor 661 b is electrically connectedto the node VN2, the other of the source and the drain thereof iselectrically connected to one of electrodes of the capacitor 660 b, anda gate thereof is electrically connected to the wiring GL. A nodebetween the other of the source and the drain of the transistor 661 band the one of electrodes of the capacitor 660 b is a node NVN2.

The other of electrodes of the capacitor 660 a is electrically connectedto the wiring CL. The other of electrodes of the capacitor 660 b iselectrically connected to the wiring CL.

Conduction and non-conduction states of the transistor 662 a and thetransistor 662 b can be controlled by a potential supplied to the wiringWL. Conduction and non-conduction states of the transistor 661 a and thetransistor 661 b can be controlled by a potential supplied to the wiringGL.

Writing, retaining, and reading operation of the memory cell illustratedin FIG. 16A will be described below.

In the case where data is written, first, potentials corresponding todata 0 or data 1 are applied to the wiring BL and the wiring BLB.

For example, in the case where data 1 is to be written, a high-levelpower supply potential (VDD) is applied to the wiring BL and a groundpotential is applied to the wiring BLB. Then, a potential (VH) higherthan or equal to the sum of VDD and the threshold voltage of thetransistors 662 a and 662 b is applied to the wiring WL.

Next, the potential of the wiring WL is set to be lower than thethreshold voltage of the transistors 662 a and 662 b, whereby the data 1written to the flip-flop is retained.

In the case where the data is read, first, the wiring BL and the wiringBLB are set to VDD in advance. Then, VH is applied to the wiring WL.Accordingly, the potential of the wiring BL remains VDD, but thepotential of the wiring BLB is discharged through the transistor 662 aand the inverter 663 a to be a ground potential. The potentialdifference between the wiring BL and the wiring BLB is amplified by asense amplifier (not illustrated), so that the retained data 1 can beread.

In the case where data 0 is to be written, the wiring BL is set to aground potential and the wiring BLB is set to VDD; then, VH is appliedto the wiring WL. Next, the potential of the wiring WL is set to belower than the threshold voltage of the transistors 662 a and 662 b,whereby the data 0 written to the flip-flop is retained. In the case ofdata reading, the wiring BL and the wiring BLB are set to VDD in advanceand VH is applied to the wiring WL, whereby the potential of the wiringBLB remains VDD but the potential of the wiring BL is discharged throughthe transistor 662 b and the inverter 663 b to be a ground potential.The potential difference between the wiring BL and the wiring BLB isamplified by the sense amplifier, so that the retained data 0 can beread.

Accordingly, the semiconductor device in FIG. 16A serves as a so-calledstatic random access memory (SRAM). An SRAM does not require refreshoperation because the SRAM retains data using a flip-flop. Therefore,power consumption in retaining data can be reduced. In addition, an SRAMdoes not require a capacitor in a flip-flop and is therefore suitablefor applications where high speed operation is required.

In the semiconductor device in FIG. 16A, data of the node VN1 can bewritten to the node NVN1 through the transistor 661 a. Similarly, dataof the node VN2 can be written to the node NVN2 through the transistor661 b. The written data is retained by turning off the transistor 661 aor the transistor 661 b. For example, even in the case where supply of apower supply potential is stopped, data of the node VN1 and the node VN2can be retained in some cases.

Unlike a conventional SRAM in which data is lost immediately aftersupply of a power supply potential is stopped, the semiconductor devicein FIG. 16A can retain data even after supply of a power supplypotential is stopped. Therefore, power consumption of the semiconductordevice can be reduced by appropriately supplying or stopping a powersupply potential. For example, the semiconductor device in FIG. 16A isused in a memory region of a CPU, whereby power consumption of the CPUcan be reduced.

Note that the length of a period during which data is retained in thenode NVN1 and the node NVN2 depends on the off-state current of thetransistor 661 a and the transistor 661 b. Therefore, a transistor withsmall off-state current is preferably used as each of the transistor 661a and the transistor 661 b in order to retain data for a long time.Alternatively, the capacitance of the capacitor 660 a and the capacitor660 b is preferably increased.

For example, when the transistor 490 and the capacitor 150 are used asthe transistor 661 a and the capacitor 660 a, data can be retained inthe node NVN1 for a long time. Similarly, when the transistor 490 andthe capacitor 150 are used as the transistor 661 b and the capacitor 660b, data can be retained in the node NVN2 for a long time. Accordingly,the description of the transistor 490 is referred to for the transistor661 a and the transistor 661 b. Furthermore, the description of thecapacitor 150 is referred to for the capacitor 660 a and the capacitor660 b.

The transistor 490 and the capacitor 150 can be formed to at leastpartly overlap with the transistor 491. The transistor 662 a, thetransistor 662 b, a transistor included in the inverter 663 a, and atransistor included in the inverter 663 b in FIG. 16A can be formed tooverlap with at least part of any of the transistor 661 a, thetransistor 661 b, the capacitor 660 a, and the capacitor 660 b.Accordingly, the semiconductor device in FIG. 16A can be formed withouta significant increase in an occupation area in some cases as comparedto a conventional SRAM. The description of the transistor 491 isreferred to for the transistor 662 a, the transistor 662 b, thetransistor included in the inverter 663 a, and the transistor includedin the inverter 663 b.

Here, for example, it is preferable in the device 500 to provide thetransistor 491 in the layer 621, the transistor 490 in the layer 622,and a conductive layer that connects the transistor 491 to thetransistor 490 in the layer 620.

Note that the connection between one of the source electrode and thedrain electrode of the transistor 490 in the structures illustrated inFIG. 10 to FIG. 14, FIG. 21, FIG. 22, and FIG. 24 may be applied to theconnection between the one of the source electrode and the drainelectrode of the transistor 661 a and the capacitor 660 a in the circuitillustrated in FIG. 16A. Furthermore, the connection between the otherof the source electrode and the drain electrode of the transistor 490and the one of the source electrode and the drain electrode of thetransistor 491 may be applied to the connection between the other of thesource electrode and the drain electrode of the transistor 661 a and theone of the source electrode and the drain electrode of the transistor662 a in the circuit illustrated in FIG. 16A.

Embodiment 2

In this embodiment, the structure of an oxide semiconductor will bedescribed.

<Structure of Oxide Semiconductor>

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a nanocrystalline oxide semiconductor (nc-OS), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

From another perspective, an oxide semiconductor is classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

It is known that an amorphous structure is generally defined as beingmetastable and unfixed, and being isotropic and having no non-uniformstructure. In other words, an amorphous structure has a flexible bondangle and a short-range order but does not have a long-range order.

This means that an inherently stable oxide semiconductor cannot beregarded as a completely amorphous oxide semiconductor. Moreover, anoxide semiconductor that is not isotropic (e.g., an oxide semiconductorthat has a periodic structure in a microscopic region) cannot beregarded as a completely amorphous oxide semiconductor. Note that ana-like OS has a periodic structure in a microscopic region, but at thesame time has a void and has an unstable structure. For this reason, ana-like OS has physical properties similar to those of an amorphous oxidesemiconductor.

<CAAC-OS>

First, a CAAC-OS will be described.

The CAAC-OS is one of oxide semiconductors having a plurality of c-axisaligned crystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, in the high-resolutionTEM image, a boundary between pellets, that is, a grain boundary is notclearly observed. Thus, in the CAAC-OS, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

A CAAC-OS observed with TEM will be described below. FIG. 33A shows ahigh-resolution TEM image of a cross section of the CAAC-OS which isobserved from a direction substantially parallel to the sample surface.The high-resolution TEM image is obtained with a spherical aberrationcorrector function. The high-resolution TEM image obtained with aspherical aberration corrector function is particularly referred to as aCs-corrected high-resolution TEM image. The Cs-corrected high-resolutionTEM image can be obtained with, for example, an atomic resolutionanalytical electron microscope JEM-ARM200F manufactured by JEOL Ltd.

FIG. 33B is an enlarged Cs-corrected high-resolution TEM image of aregion (1) in FIG. 33A. FIG. 33B shows that metal atoms are arranged ina layered manner in a pellet. Each metal atom layer has a configurationreflecting unevenness of a surface over which the CAAC-OS is formed(hereinafter, the surface is referred to as a formation surface) or atop surface of the CAAC-OS, and is arranged parallel to the formationsurface or the top surface of the CAAC-OS.

As shown in FIG. 33B, the CAAC-OS has a characteristic atomicarrangement. The characteristic atomic arrangement is denoted by anauxiliary line in FIG. 33C. FIGS. 33B and 33C prove that the size of apellet is greater than or equal to 1 nm or greater than or equal to 3nm, and the size of a space caused by tilt of the pellets isapproximately 0.8 nm. Therefore, the pellet can also be referred to as ananocrystal (nc). Furthermore, the CAAC-OS can also be referred to as anoxide semiconductor including c-axis aligned nanocrystals (CANC).

Here, according to the Cs-corrected high-resolution TEM images, theschematic arrangement of pellets 5100 of a CAAC-OS over a substrate 5120is illustrated by such a structure in which bricks or blocks are stacked(see FIG. 33D). The part in which the pellets are tilted as observed inFIG. 33C corresponds to a region 5161 shown in FIG. 33D.

FIG. 34A shows a Cs-corrected high-resolution TEM image of a plane ofthe CAAC-OS observed from a direction substantially perpendicular to thesample surface. FIGS. 34B, 34C, and 34D are enlarged Cs-correctedhigh-resolution TEM images of regions (1), (2), and (3) in FIG. 34A,respectively. FIGS. 34B, 34C, and 34D indicate that metal atoms arearranged in a triangular, quadrangular, or hexagonal configuration in apellet. However, there is no regularity of arrangement of metal atomsbetween different pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD) will be described.For example, when the structure of a CAAC-OS including an InGaZnO₄crystal is analyzed by an out-of-plane method, a peak appears at adiffraction angle (2θ) of around 31° as shown in FIG. 35A. This peak isattributed to the (009) plane of the InGaZnO₄ crystal, which indicatesthat crystals in the CAAC-OS have c-axis alignment, and that the c-axesare aligned in a direction substantially perpendicular to the formationsurface or the top surface of the CAAC-OS.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 36° indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. It is preferable that in the CAAC-OS analyzed by anout-of-plane method, a peak appear when 2θ is around 31° and that a peaknot appear when 2θ is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray beam is incident on a sample in a directionsubstantially perpendicular to the c-axis, a peak appears when 2θ isaround 56°. This peak is attributed to the (110) plane of the InGaZnO₄crystal. In the case of the CAAC-OS, when analysis (φ scan) is performedwith 2θ fixed at around 56° and with the sample rotated using a normalvector of the sample surface as an axis (φ axis), as shown in FIG. 35B,a peak is not clearly observed. In contrast, in the case of a singlecrystal oxide semiconductor of InGaZnO₄, when φ scan is performed with2θ fixed at around 56°, as shown in FIG. 35C, six peaks which areattributed to crystal planes equivalent to the (110) plane are observed.Accordingly, the structural analysis using XRD shows that the directionsof a-axes and b-axes are irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction will be described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in a directionparallel to the sample surface, a diffraction pattern (also referred toas a selected-area transmission electron diffraction pattern) shown inFIG. 36A can be obtained. In this diffraction pattern, spots attributedto the (009) plane of an InGaZnO₄ crystal are included. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in a directionsubstantially perpendicular to the formation surface or the top surfaceof the CAAC-OS. Meanwhile, FIG. 36B shows a diffraction pattern obtainedin such a manner that an electron beam with a probe diameter of 300 nmis incident on the same sample in a direction perpendicular to thesample surface. As shown in FIG. 36B, a ring-like diffraction pattern isobserved. Thus, the electron diffraction also indicates that the a-axesand b-axes of the pellets included in the CAAC-OS do not have regularalignment. The first ring in FIG. 36B is considered to be attributed tothe (010) plane, the (100) plane, and the like of the InGaZnO₄ crystal.The second ring in FIG. 36B is considered to be attributed to the (110)plane and the like.

As described above, the CAAC-OS is an oxide semiconductor with highcrystallinity. Entry of impurities, formation of defects, or the likemight decrease the crystallinity of an oxide semiconductor. This meansthat the CAAC-OS has small amounts of impurities and defects (e.g.,oxygen vacancies).

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, which results in disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. Impuritiescontained in the oxide semiconductor might serve as carrier traps orcarrier generation sources, for example. Furthermore, an oxygen vacancyin the oxide semiconductor might serve as a carrier trap or serve as acarrier generation source when hydrogen is captured therein.

The CAAC-OS having small amounts of impurities and oxygen vacancies isan oxide semiconductor with low carrier density. Specifically, an oxidesemiconductor with a carrier density of lower than 8×10¹¹/cm³,preferably lower than 1×10¹¹/cm³, further preferably lower than1×10¹⁰/cm³, and is higher than or equal to 1×10⁻⁹/cm³ can be used. Suchan oxide semiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low density of defect states.Thus, the CAAC-OS can be referred to as an oxide semiconductor havingstable characteristics.

<nc-OS>

Next, an nc-OS will be described.

An nc-OS has a region in which a crystal part is observed and a regionin which a crystal part is not clearly observed in a high-resolution TEMimage. In most cases, the size of a crystal part included in the nc-OSis greater than or equal to 1 nm and less than or equal to 10 nm, orgreater than or equal to 1 nm and less than or equal to 3 nm. Note thatan oxide semiconductor including a crystal part whose size is greaterthan 10 nm and less than or equal to 100 nm is sometimes referred to asa microcrystalline oxide semiconductor. In a high-resolution TEM imageof the nc-OS, for example, a grain boundary is not clearly observed insome cases. Note that there is a possibility that the origin of thenanocrystal is the same as that of a pellet in a CAAC-OS. Therefore, acrystal part of the nc-OS may be referred to as a pellet in thefollowing description.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not ordered.Accordingly, the nc-OS cannot be distinguished from an a-like OS or anamorphous oxide semiconductor, depending on an analysis method. Forexample, when the nc-OS is analyzed by an out-of-plane method using anX-ray beam having a diameter larger than the size of a pellet, a peakwhich shows a crystal plane does not appear. Furthermore, a diffractionpattern like a halo pattern is observed when the nc-OS is subjected toelectron diffraction using an electron beam with a probe diameter (e.g.,50 nm or larger) that is larger than the size of a pellet. Meanwhile,spots appear in a nanobeam electron diffraction pattern of the nc-OSwhen an electron beam having a probe diameter close to or smaller thanthe size of a pellet is applied. Moreover, in a nanobeam electrondiffraction pattern of the nc-OS, bright regions in a circular (ring)pattern are shown in some cases. Also in a nanobeam electron diffractionpattern of the nc-OS, a plurality of spots is shown in a ring-likeregion in some cases.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an a-like OS and an amorphousoxide semiconductor. Note that there is no regularity of crystalorientation between different pellets in the nc-OS. Therefore, the nc-OShas a higher density of defect states than the CAAC-OS.

<a-Like OS>

An a-like OS has a structure intermediate between those of the nc-OS andthe amorphous oxide semiconductor.

In a high-resolution TEM image of the a-like OS, a void may be observed.

Furthermore, in the high-resolution TEM image, there are a region wherea crystal part is clearly observed and a region where a crystal part isnot observed.

The a-like OS has an unstable structure because it contains a void. Toverify that an a-like OS has an unstable structure as compared with aCAAC-OS and an nc-OS, a change in structure caused by electronirradiation is described below.

An a-like OS (sample A), an nc-OS (sample B), and a CAAC-OS (sample C)are prepared as samples subjected to electron irradiation. Each of thesamples is an In—Ga—Zn oxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

Note that which part is regarded as a crystal part is determined asfollows. It is known that a unit cell of an InGaZnO₄ crystal has astructure in which nine layers including three In—O layers and sixGa—Zn—O layers are stacked in the c-axis direction. The distance betweenthe adjacent layers is equivalent to the lattice spacing on the (009)plane (also referred to as d value). The value is calculated to be 0.29nm from crystal structural analysis. Accordingly, a portion where thelattice spacing between lattice fringes is greater than or equal to 0.28nm and less than or equal to 0.30 nm is regarded as a crystal part ofInGaZnO₄. Each of lattice fringes corresponds to the a-b plane of theInGaZnO₄ crystal.

FIG. 37 shows change in the average size of crystal parts (at 22 pointsto 45 points) in each sample. Note that the crystal part sizecorresponds to the length of a lattice fringe. FIG. 37 indicates thatthe crystal part size in the a-like OS increases with an increase in thecumulative electron dose. Specifically, as shown by (1) in FIG. 37, acrystal part of approximately 1.2 nm (also referred to as an initialnucleus) at the start of TEM observation grows to a size ofapproximately 2.6 nm at a cumulative electron dose of 4.2×10⁸ e⁻/nm². Incontrast, the crystal part size in the nc-OS and the CAAC-OS showslittle change from the start of electron irradiation to a cumulativeelectron dose of 4.2×10⁸ e⁻/nm². Specifically, as shown by (2) and (3)in FIG. 37, the average crystal sizes in an nc-OS and a CAAC-OS areapproximately 1.4 nm and approximately 2.1 nm, respectively, regardlessof the cumulative electron dose.

In this manner, growth of the crystal part in the a-like OS is inducedby electron irradiation. In contrast, in the nc-OS and the CAAC-OS,growth of the crystal part is hardly induced by electron irradiation.Therefore, the a-like OS has an unstable structure as compared with thenc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit contains a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. It is difficult to deposit an oxidesemiconductor having a density of lower than 78% of the density of thesingle crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In:Ga:Zn=1:1:1, thedensity of the a-like OS is higher than or equal to 5.0 g/cm³ and lowerthan 5.9 g/cm³. For example, in the case of the oxide semiconductorhaving an atomic ratio of In:Ga:Zn=1:1:1, the density of each of thenc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³ and lowerthan 6.3 g/cm³.

Note that there is a possibility that an oxide semiconductor having acertain composition cannot exist in a single crystal structure. In thatcase, single crystal oxide semiconductors with different compositionsare combined at an adequate ratio, which makes it possible to calculatedensity equivalent to that of a single crystal oxide semiconductor withthe desired composition. The density of a single crystal oxidesemiconductor having the desired composition can be calculated using aweighted average according to the combination ratio of the singlecrystal oxide semiconductors with different compositions. Note that itis preferable to use as few kinds of single crystal oxide semiconductorsas possible to calculate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackedlayer including two or more of an amorphous oxide semiconductor, ana-like OS, an nc-OS, and a CAAC-OS, for example.

Embodiment 3

In this embodiment, a CPU in which at least the transistor described inthe above embodiment can be used and the memory device described in theabove embodiment is included is described.

FIG. 38 is a block diagram illustrating a configuration example of a CPUat least partly including the memory device described in the aboveembodiment as a component.

The CPU illustrated in FIG. 38 includes, over a substrate 1190, anarithmetic logic unit (ALU) 1191, an ALU controller 1192, an instructiondecoder 1193, an interrupt controller 1194, a timing controller 1195, aregister 1196, a register controller 1197, a bus interface 1198 (BUSI/F), a rewritable ROM 1199, and a ROM interface (ROM I/F) 1189. Asemiconductor substrate, an SOI substrate, a glass substrate, or thelike is used as the substrate 1190. The ROM 1199 and the ROM interface1189 may be provided over a separate chip. Needless to say, the CPU inFIG. 38 is just an example in which the configuration is simplified, andan actual CPU may have a variety of configurations depending on theapplication. For example, the CPU may have the following configuration:a structure including the CPU illustrated in FIG. 38 or an arithmeticcircuit is considered as one core; a plurality of the cores areincluded; and the cores operate in parallel. The number of bits that theCPU can process in an internal arithmetic circuit or in a data bus canbe, for example, 8, 16, 32, or 64.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 1192 generates signals for controlling the operation of theALU 1191. While the CPU is executing a program, the interrupt controller1194 processes an interrupt request from an external input/output deviceor a peripheral circuit depending on its priority or a mask state. Theregister controller 1197 generates an address of the register 1196, andreads/writes data from/to the register 1196 depending on the state ofthe CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal on the basis of areference clock signal, and supplies the internal clock signal to theabove circuits.

In the CPU illustrated in FIG. 38, a memory cell is provided in theregister 1196.

In the CPU illustrated in FIG. 38, the register controller 1197 selectsoperation of retaining data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is retained by a flip-flop or by a capacitor in thememory cell included in the register 1196. When data retaining by theflip-flop is selected, a power supply voltage is supplied to the memorycell in the register 1196. When data retaining by the capacitor isselected, the data is rewritten in the capacitor, and supply of powersupply voltage to the memory cell in the register 1196 can be stopped.

FIG. 39 is an example of a circuit diagram of a memory device that canbe used for the register 1196. A memory device 1200 includes a circuit1201 in which stored data is volatile when power supply is stopped, acircuit 1202 in which stored data is nonvolatile even when power supplyis stopped, a switch 1203, a switch 1204, a logic element 1206, acapacitor 1207, and a circuit 1220 having a selecting function. Thecircuit 1202 includes a capacitor 1208, a transistor 1209, and atransistor 1210. Note that the memory device 1200 may further includeanother element such as a diode, a resistor, or an inductor, as needed.The transistor 1209 is preferably a transistor in which a channel isformed in an oxide semiconductor layer. For the transistor 1209, thetransistor 490 described in the above embodiment can be referred to.

Here, the memory device described in the above embodiment can be used asthe circuit 1202. When supply of a power supply voltage to the memorydevice 1200 is stopped, a ground potential (0 V) or a potential at whichthe transistor 1209 in the circuit 1202 is turned off continues to beinput to a gate of the transistor 1209. For example, the gate of thetransistor 1209 is grounded through a load such as a resistor.

Here, for example, the connection between the one of the sourceelectrode and the drain electrode of the transistor 490 and thecapacitor 150 in the structures illustrated in FIGS. 10 to 14, FIG. 21,FIG. 22, and FIG. 24 may be applied to the connection between one of asource electrode and a drain electrode of the transistor 1209 and thecapacitor 1208 in the circuit in FIG. 39. Furthermore, the connectionbetween the other of the source electrode and the drain electrode of thetransistor 490 and the gate electrode of the transistor 491 may beapplied to the connection between the one of the source electrode andthe drain electrode of the transistor 1209 and the gate of thetransistor 1210 in the circuit in FIG. 39.

Shown here is an example in which the switch 1203 is a transistor 1213having one conductivity type (e.g., an n-channel transistor) and theswitch 1204 is a transistor 1214 having a conductivity type opposite tothe one conductivity type (e.g., a p-channel transistor). A firstterminal of the switch 1203 corresponds to one of a source and a drainof the transistor 1213, a second terminal of the switch 1203 correspondsto the other of the source and the drain of the transistor 1213, andconduction or non-conduction between the first terminal and the secondterminal of the switch 1203 (i.e., the on/off state of the transistor1213) is selected by a control signal RD input to a gate of thetransistor 1213. A first terminal of the switch 1204 corresponds to oneof a source and a drain of the transistor 1214, a second terminal of theswitch 1204 corresponds to the other of the source and the drain of thetransistor 1214, and conduction or non-conduction between the firstterminal and the second terminal of the switch 1204 (i.e., the on/offstate of the transistor 1214) is selected by the control signal RD inputto a gate of the transistor 1214.

One of a source and a drain of the transistor 1209 is electricallyconnected to one of a pair of electrodes of the capacitor 1208 and agate of the transistor 1210. Here, the connection portion is referred toas a node M2. One of a source and a drain of the transistor 1210 iselectrically connected to a wiring that can supply a low power supplypotential (e.g., a GND line), and the other thereof is electricallyconnected to the first terminal of the switch 1203 (the one of thesource and the drain of the transistor 1213). The second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is electrically connected to the first terminal of the switch 1204(the one of the source and the drain of the transistor 1214). The secondterminal of the switch 1204 (the other of the source and the drain ofthe transistor 1214) is electrically connected to a wiring that cansupply a power supply potential VDD. The second terminal of the switch1203 (the other of the source and the drain of the transistor 1213), thefirst terminal of the switch 1204 (the one of the source and the drainof the transistor 1214), an input terminal of the logic element 1206,and one of a pair of electrodes of the capacitor 1207 are electricallyconnected to each other. Here, the connection portion is referred to asa node M1. The other of the pair of electrodes of the capacitor 1207 canbe supplied with a constant potential. For example, the other of thepair of electrodes of the capacitor 1207 can be supplied with a lowpower supply potential (e.g., GND) or a high power supply potential(e.g., VDD). The other of the pair of electrodes of the capacitor 1207is electrically connected to the wiring that can supply a low powersupply potential (e.g., a GND line). The other of the pair of electrodesof the capacitor 1208 can be supplied with a constant potential. Forexample, the other of the pair of electrodes of the capacitor 1208 canbe supplied with a low power supply potential (e.g., GND) or a highpower supply potential (e.g., VDD). The other of the pair of electrodesof the capacitor 1208 is electrically connected to the wiring that cansupply a low power supply potential (e.g., a GND line).

The capacitor 1207 and the capacitor 1208 are not necessarily providedas long as the parasitic capacitance of the transistor, the wiring, orthe like is actively utilized.

A control signal WE is input to the first gate (first gate electrode) ofthe transistor 1209. As for each of the switch 1203 and the switch 1204,a conduction state or a non-conduction state between the first terminaland the second terminal is selected by the control signal RD that isdifferent from the control signal WE. When the first terminal and thesecond terminal of one of the switches are in the conduction state, thefirst terminal and the second terminal of the other of the switches arein the non-conduction state.

A signal corresponding to data retained in the circuit 1201 is input tothe other of the source and the drain of the transistor 1209. FIG. 39illustrates an example in which a signal output from the circuit 1201 isinput to the other of the source and the drain of the transistor 1209.The logic value of a signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is inverted by the logic element 1206, and the inverted signal isinput to the circuit 1201 through the circuit 1220.

In the example of FIG. 39, a signal output from the second terminal ofthe switch 1203 (the other of the source and the drain of the transistor1213) is input to the circuit 1201 through the logic element 1206 andthe circuit 1220; however, one embodiment of the present invention isnot limited thereto. The signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) may be input to the circuit 1201 without its logic value beinginverted. For example, in the case where the circuit 1201 includes anode in which a signal obtained by inversion of the logic value of asignal input from the input terminal is retained, the signal output fromthe second terminal of the switch 1203 (the other of the source and thedrain of the transistor 1213) can be input to the node.

In FIG. 39, the transistors included in the memory device 1200 exceptfor the transistor 1209 can each be a transistor in which a channel isformed in a layer formed using a semiconductor other than an oxidesemiconductor or in the substrate 1190. For example, the transistor canbe a transistor whose channel is formed in a silicon layer or a siliconsubstrate. Alternatively, a transistor in which a channel is formed inan oxide semiconductor layer can be used for all the transistors in thememory device 1200. Further alternatively, in the memory device 1200, atransistor in which a channel is formed in an oxide semiconductor layercan be included besides the transistor 1209, and a transistor in which achannel is formed in a layer formed using a semiconductor other than anoxide semiconductor or the substrate 1190 can be used for the rest ofthe transistors.

As the circuit 1201 in FIG. 39, for example, a flip-flop circuit can beused. As the logic element 1206, for example, an inverter or a clockedinverter can be used.

In a period during which the memory device 1200 is not supplied with thepower supply voltage, the semiconductor device of one embodiment of thepresent invention can retain data stored in the circuit 1201 by thecapacitor 1208 that is provided in the circuit 1202.

The off-state current of a transistor in which a channel is formed in anoxide semiconductor layer is extremely small. For example, the off-statecurrent of a transistor in which a channel is formed in an oxidesemiconductor layer is significantly smaller than that of a transistorin which a channel is formed in silicon having crystallinity. Thus, whenthe transistor is used as the transistor 1209, a signal is retained inthe capacitor 1208 for a long time also in a period during which thepower supply voltage is not supplied to the memory device 1200. Thememory device 1200 can accordingly retain the stored content (data) alsoin a period during which the supply of the power supply voltage isstopped.

Since the memory element performs pre-charge operation with the switch1203 and the switch 1204, the time required for the circuit 1201 toretain original data again after the supply of the power supply voltageis restarted can be shortened.

In the circuit 1202, a signal retained by the capacitor 1208 is input tothe gate of the transistor 1210. Thus, after supply of the power supplyvoltage to the memory device 1200 is restarted, the signal retained bythe capacitor 1208 can be converted into the one corresponding to thestate (the on state or the off state) of the transistor 1210 to be readfrom the circuit 1202. Consequently, an original signal can beaccurately read even when a potential corresponding to the signalretained by the capacitor 1208 changes to some degree.

By using the above-described memory device 1200 in a memory device suchas a register or a cache memory included in a processor, data in thememory device can be prevented from being lost owing to the stop of thesupply of the power supply voltage. Furthermore, shortly after thesupply of the power supply voltage is restarted, the memory device canbe returned to the same state as that before the power supply isstopped. Thus, the power supply can be stopped even for a short time inthe processor or one or a plurality of logic circuits included in theprocessor, resulting in lower power consumption.

Although the memory device 1200 is used in a CPU in this embodiment, thememory device 1200 can also be used in an LSI such as a digital signalprocessor (DSP), a custom LSI, or a programmable logic device (PLD), anda radio frequency identification (RF-ID).

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 4

In this embodiment, an RF tag that includes the memory device describedin the above embodiment is described with reference to FIG. 40.

The RF tag of this embodiment includes a memory circuit, storesnecessary data in the memory circuit, and transmits and receives datato/from the outside by using contactless means, for example, wirelesscommunication. With these features, the RF tag can be used for anindividual authentication system in which an object or the like isrecognized by reading the individual information, for example. Note thatthe RF tag is required to have extremely high reliability in order to beused for this purpose.

A configuration of the RF tag will be described with reference to FIG.40. FIG. 40 is a block diagram illustrating a configuration example ofan RF tag.

As shown in FIG. 40, an RF tag 800 includes an antenna 804 whichreceives a radio signal 803 that is transmitted from an antenna 802connected to a communication device 801 (also referred to as aninterrogator, a reader/writer, or the like). The RF tag 800 includes arectifier circuit 805, a constant voltage circuit 806, a demodulationcircuit 807, a modulation circuit 808, a logic circuit 809, a memorycircuit 810, and a ROM 811. A transistor having a rectifying functionincluded in the demodulation circuit 807 may be formed using a materialwhich enables a reverse current to be low enough, for example, an oxidesemiconductor. This can suppress the phenomenon of a rectifying functionbecoming weaker due to generation of a reverse current and preventsaturation of the output from the demodulation circuit. In other words,the input to the demodulation circuit and the output from thedemodulation circuit can have a relation closer to a linear relation.Note that data transmission methods are roughly classified into thefollowing three methods: an electromagnetic coupling method in which apair of coils is provided so as to face each other and communicates witheach other by mutual induction, an electromagnetic induction method inwhich communication is performed using an induction field, and a radiowave method in which communication is performed using a radio wave. Anyof these methods can be used in the RF tag 800 described in thisembodiment.

Next, the structure of each circuit will be described. The antenna 804exchanges the radio signal 803 with the antenna 802 which is connectedto the communication device 801. The rectifier circuit 805 generates aninput potential by rectification, for example, half-wave voltage doublerrectification of an input alternating signal generated by reception of aradio signal at the antenna 804 and smoothing of the rectified signalwith a capacitor provided in a later stage in the rectifier circuit 805.Note that a limiter circuit may be provided on an input side or anoutput side of the rectifier circuit 805. The limiter circuit controlselectric power so that electric power which is higher than or equal tocertain electric power is not input to a circuit in a later stage if theamplitude of the input alternating signal is high and an internalgeneration voltage is high.

The constant voltage circuit 806 generates a stable power supply voltagefrom an input potential and supplies it to each circuit. Note that theconstant voltage circuit 806 may include a reset signal generationcircuit. The reset signal generation circuit is a circuit whichgenerates a reset signal of the logic circuit 809 by utilizing rise ofthe stable power supply voltage.

The demodulation circuit 807 demodulates the input alternating signal byenvelope detection and generates the demodulated signal. Further, themodulation circuit 808 performs modulation in accordance with data to beoutput from the antenna 804.

The logic circuit 809 analyzes and processes the demodulated signal. Thememory circuit 810 holds the input data and includes a row decoder, acolumn decoder, a memory region, and the like. Further, the ROM 811stores an identification number (ID) or the like and outputs it inaccordance with processing.

Note that the decision whether each circuit described above is providedor not can be made as appropriate as needed.

Here, the memory device described in the above embodiment can be used asthe memory circuit 810. When the memory device described in the aboveembodiment is used as the memory circuit 810, data retention is possibleeven when power is not supplied; accordingly, the memory circuit can befavorably used for an RF tag. Furthermore, the memory device of oneembodiment of the present invention needs power (voltage) for datawriting significantly lower than that needed in a conventionalnonvolatile memory; thus, it is possible to prevent a difference betweenthe maximum communication range in data reading and that in datawriting. In addition, it is possible to suppress malfunction orincorrect writing which is caused by power shortage in data writing.

Since the memory device of one embodiment of the present invention canbe used as a nonvolatile memory, it can also be used as the ROM 811. Inthis case, it is preferable that a manufacturer separately prepare acommand for writing data to the ROM 811 so that a user cannot rewritedata freely. Since the manufacturer gives identification numbers beforeshipment and then starts shipment of products, instead of puttingidentification numbers to all the manufactured RF tags, it is possibleto put identification numbers to only good products to be shipped. Thus,the identification numbers of the shipped products are in series andcustomer management for the shipped products is easily performed.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 5

In this embodiment, application examples of an RF tag of one embodimentof the present invention are described with reference to FIGS. 41A to41F. The RF tag is widely used and can be provided for, for example,products such as bills, coins, securities, bearer bonds, documents(e.g., driver's licenses or residence cards, see FIG. 41A), recordingmedia (e.g., DVDs or video tapes, see FIG. 41B), packaging containers(e.g., wrapping paper or bottles, see FIG. 41C), vehicles (e.g.,bicycles, see FIG. 41D), personal belongings (e.g., bags or glasses),foods, plants, animals, human bodies, clothing, household goods, medicalsupplies such as medicine and chemicals, and electronic devices (e.g.,liquid crystal display devices, EL display devices, television sets, orcellular phones), or tags on products (see FIGS. 41E and 41F).

An RF tag 4000 of one embodiment of the present invention is fixed to aproduct by being attached to a surface thereof or embedded therein. Forexample, the RF tag 4000 is fixed to each product by being embedded inpaper of a book, or embedded in an organic resin of a package. Since theRF tag 4000 of one embodiment of the present invention can be reduced insize, thickness, and weight, it can be fixed to a product withoutspoiling the design of the product. Furthermore, bills, coins,securities, bearer bonds, documents, or the like can have anidentification function by being provided with the RF tag 4000 of oneembodiment of the present invention, and the identification function canbe utilized to prevent counterfeiting. Moreover, the efficiency of asystem such as an inspection system can be improved by providing the RFtag of one embodiment of the present invention for packaging containers,recording media, personal belongings, foods, clothing, household goods,electronic devices, or the like. Vehicles can also have higher securityagainst theft or the like by being provided with the RF tag of oneembodiment of the present invention.

As described above, by using the RF tag of one embodiment of the presentinvention for each application described in this embodiment, power foroperation such as writing or reading of data can be reduced, whichresults in an increase in the maximum communication distance. Moreover,data can be retained for an extremely long period even in the statewhere power is not supplied; thus, the RF tag can be preferably used forapplication in which data is not frequently written or read.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 6

In this embodiment, a structure example of a display panel of oneembodiment of the present invention is described.

[Structure Example]

FIG. 42A is a top view of the display panel of one embodiment of thepresent invention. FIG. 42B is a circuit diagram illustrating a pixelcircuit that can be used in the case where a liquid crystal element isused in a pixel in the display panel of one embodiment of the presentinvention. FIG. 42C is a circuit diagram illustrating a pixel circuitthat can be used in the case where an organic EL element is used in apixel in the display panel of one embodiment of the present invention.

The transistor in the pixel portion can be formed in accordance with theabove embodiment. For example, the transistor 490 described in the aboveembodiment can be referred to. The transistor can be easily formed as ann-channel transistor, and thus part of a driver circuit that can beformed using an n-channel transistor can be formed over the samesubstrate as the transistor of the pixel portion. With the use of any ofthe transistors described in the above embodiment for the pixel portionor the driver circuit in this manner, a highly reliable display devicecan be provided.

The transistor in the pixel portion of the display panel and part of adriver circuit that can be formed using an n-channel transistor arepreferably provided in the layer 622 described in the above embodiment.In that case, for example, some transistors in the driver circuit may beprovided in the layer 621 described in the above embodiment.Furthermore, for example, the driver circuit portion and the pixelportion may be electrically connected to each other through a wiringprovided in the layer 620 described in the above embodiment.

FIG. 42A illustrates an example of a block diagram of an active matrixdisplay device. A pixel portion 701, a first scan line driver circuit702, a second scan line driver circuit 703, and a signal line drivercircuit 704 are formed over a substrate 700 of the display device. Inthe pixel portion 701, a plurality of signal lines extended from thesignal line driver circuit 704 are arranged and a plurality of scanlines extended from the first scan line driver circuit 702 and thesecond scan line driver circuit 703 are arranged. Note that pixels thatinclude display elements are provided in a matrix in respective regionswhere the scan lines and the signal lines intersect with each other. Thesubstrate 700 of the display device is connected to a timing controlcircuit (also referred to as a controller or a controller IC) through aconnection portion such as a flexible printed circuit (FPC).

In FIG. 42A, the first scan line driver circuit 702, the second scanline driver circuit 703, and the signal line driver circuit 704 areformed over the substrate 700 where the pixel portion 701 is formed.Consequently, the number of components provided outside, such as adriver circuit, can be reduced, so that a reduction in cost can beachieved. Furthermore, if the driver circuit is provided outside thesubstrate 700, wirings would need to be extended and the number ofwiring connections would increase. When the driver circuit is providedover the substrate 700, the number of wiring connections can be reduced.Consequently, an improvement in reliability or yield can be achieved.

[Liquid Crystal Panel]

FIG. 42B illustrates an example of a circuit configuration of the pixel.Here, a pixel circuit that can be used in a pixel of a VA liquid crystaldisplay panel is illustrated.

This pixel circuit can be applied to a structure in which one pixelincludes a plurality of pixel electrode layers. The pixel electrodelayers are connected to different transistors, and the transistors canbe driven with different gate signals. Accordingly, signals applied toindividual pixel electrode layers in a multi-domain pixel can becontrolled independently.

A gate wiring 712 of a transistor 716 and a gate wiring 713 of atransistor 717 are separated so that different gate signals can besupplied thereto. In contrast, a source or drain electrode layer 714that functions as a data line is shared by the transistors 716 and 717.The transistor 490 described the above embodiment can be used asappropriate as each of the transistors 716 and 717. Thus, a highlyreliable liquid crystal display panel can be provided.

A first pixel electrode layer is electrically connected to thetransistor 716 and a second pixel electrode layer is electricallyconnected to the transistor 717. The first pixel electrode layer and thesecond pixel electrode layer are separated. Shapes of the first pixelelectrode layer and the second pixel electrode layer are notparticularly limited. For example, the first pixel electrode layer mayhave a V-like shape.

A gate electrode of the transistor 716 is connected to the gate wiring712, and a gate electrode of the transistor 717 is connected to the gatewiring 713. When different gate signals are supplied to the gate wiring712 and the gate wiring 713, operation timings of the transistor 716 andthe transistor 717 can be varied. As a result, alignment of liquidcrystals can be controlled.

In addition, a storage capacitor may be formed using a capacitor wiring710, a gate insulating film functioning as a dielectric, and a capacitorelectrode electrically connected to the first pixel electrode layer orthe second pixel electrode layer.

The multi-domain structure includes a first liquid crystal element 718and a second liquid crystal element 719 in one pixel. The first liquidcrystal element 718 includes the first pixel electrode layer, a counterelectrode layer, and a liquid crystal layer therebetween. The secondliquid crystal element 719 includes the second pixel electrode layer, acounter electrode layer, and a liquid crystal layer therebetween.

Note that a pixel circuit is not limited to that shown in FIG. 42B. Forexample, a switch, a resistor, a capacitor, a transistor, a sensor, alogic circuit, or the like may be added to the pixel shown in FIG. 42B.

[Organic EL Panel]

FIG. 42C shows another example of a circuit configuration of the pixel.Here, a pixel structure of a display panel using an organic EL elementis shown.

In an organic EL element, by application of voltage to a light-emittingelement, electrons are injected from one of a pair of electrodes andholes are injected from the other of the pair of electrodes, into alayer containing a light-emitting organic compound; thus, current flows.

The electrons and holes are recombined, and thus, the light-emittingorganic compound is excited. The light-emitting organic compound returnsto a ground state from the excited state, thereby emitting light. On thebasis of such a mechanism, this light-emitting element is referred to asa current-excitation light-emitting element.

FIG. 42C shows an example of a pixel circuit that can be used. In thisexample, one pixel includes two n-channel transistors. Note that a metaloxide film of one embodiment of the present invention can be used forchannel formation regions of the n-channel transistors. Digital timegrayscale driving can be employed for the pixel circuit.

The configuration of the applicable pixel circuit and operation of apixel employing digital time grayscale driving are described.

A pixel 720 includes a switching transistor 721, a driver transistor722, a light-emitting element 724, and a capacitor 723. A gate electrodelayer of the switching transistor 721 is connected to a scan line 726, afirst electrode (one of a source electrode layer and a drain electrodelayer) of the switching transistor 721 is connected to a signal line725, and a second electrode (the other of the source electrode layer andthe drain electrode layer) of the switching transistor 721 is connectedto a gate electrode layer of the driver transistor 722. The gateelectrode layer of the driver transistor 722 is connected to a powersupply line 727 through the capacitor 723, a first electrode of thedriver transistor 722 is connected to the power supply line 727, and asecond electrode of the driver transistor 722 is connected to a firstelectrode (a pixel electrode) of the light-emitting element 724. Asecond electrode of the light-emitting element 724 corresponds to acommon electrode 728. The common electrode 728 is electrically connectedto a common potential line provided over the same substrate.

As the switching transistor 721 and the driver transistor 722, thetransistor 490 described in the above embodiment can be used asappropriate. In this manner, a highly reliable organic EL display panelcan be provided.

The potential of the second electrode (the common electrode 728) of thelight-emitting element 724 is set to be a low power supply potential.Note that the low power supply potential is lower than a high powersupply potential supplied to the power supply line 727. For example, thelow power supply potential can be GND, OV, or the like. The high powersupply potential and the low power supply potential are set to be higherthan or equal to the forward threshold voltage of the light-emittingelement 724, and the difference between the potentials is applied to thelight-emitting element 724, whereby current is supplied to thelight-emitting element 724, leading to light emission. The forwardvoltage of the light-emitting element 724 refers to a voltage at which adesired luminance is obtained, and includes at least forward thresholdvoltage.

Note that gate capacitance of the driver transistor 722 may be used as asubstitute for the capacitor 723, so that the capacitor 723 can beomitted. The gate capacitance of the driver transistor 722 may be formedbetween the channel formation region and the gate electrode layer.

Next, a signal input to the driver transistor 722 is described. In thecase of a voltage-input voltage driving method, a video signal forsufficiently turning on or off the driver transistor 722 is input to thedriver transistor 722. In order for the driver transistor 722 to operatein a linear region, voltage higher than the voltage of the power supplyline 727 is applied to the gate electrode layer of the driver transistor722. Note that voltage higher than or equal to voltage that is the sumof power supply line voltage and the threshold voltage V_(th) of thedriver transistor 722 is applied to the signal line 725.

In the case of performing analog grayscale driving, voltage greater thanor equal to voltage that is the sum of the forward voltage of thelight-emitting element 724 and the threshold voltage V_(th) of thedriver transistor 722 is applied to the gate electrode layer of thedriver transistor 722. A video signal by which the driver transistor 722is operated in a saturation region is input, so that current is suppliedto the light-emitting element 724. In order for the driver transistor722 to operate in a saturation region, the potential of the power supplyline 727 is set higher than the gate potential of the driver transistor722. When an analog video signal is used, it is possible to supplycurrent to the light-emitting element 724 in accordance with the videosignal and perform analog grayscale driving.

Note that the configuration of the pixel circuit is not limited to thatshown in FIG. 42C. For example, a switch, a resistor, a capacitor, asensor, a transistor, a logic circuit, or the like may be added to thepixel circuit shown in FIG. 42C.

In the case where any of the transistors described in the aboveembodiment is used for the circuit shown in FIGS. 42A to 42C, the sourceelectrode (the first electrode) is electrically connected to the lowpotential side and the drain electrode (the second electrode) iselectrically connected to the high potential side. Furthermore, thepotential of the first gate electrode may be controlled by a controlcircuit or the like and the potential described above as an example,e.g., a potential lower than the potential applied to the sourceelectrode, may be input to the second gate electrode through a wiringthat is not illustrated.

For example, in this specification and the like, a display element, adisplay device which is a device including a display element, alight-emitting element, and a light-emitting device which is a deviceincluding a light-emitting element can employ a variety of modes or caninclude a variety of elements. The display element, the display device,the light-emitting element, or the light-emitting device includes atleast one of an electronluminescence (EL) element (e.g., an EL elementincluding organic and inorganic materials, an organic EL element, or aninorganic EL element), an LED chip (e.g., a white LED chip, a red LEDchip, a green LED chip, or a blue LED chip), a transistor (a transistorthat emits light depending on current), an electron emitter, a liquidcrystal element, electronic ink, an electrophoretic element, a plasmadisplay panel (PDP), a display element using micro electro mechanicalsystem (MEMS) (e.g., a grating light valve (GLV), a digital micromirrordevice (DMD), a digital micro shutter (DMS), an interferometricmodulator display (IMOD) element, a MEMS shutter display element, anoptical-interference-type MEMS display element, and a piezoelectricceramic display), an electrowetting element, a quantum dot, and adisplay element including a carbon nanotube. Other than the above, adisplay medium whose contrast, luminance, reflectance, transmittance, orthe like is changed by electrical or magnetic action may be included.Examples of a display device having an EL element include an EL display.Examples of a display device having an electron emitter include a fieldemission display (FED) and a surface-conduction electron-emitter display(SED)-type flat panel display. Examples of a display device using aquantum dot in each pixel include a quantum dot display. Note that aquantum dot may be provided not as a display element but in part of abacklight. The usage of the quantum dot leads to display with high colorpurity. Examples of a display device including a liquid crystal elementinclude a liquid crystal display (e.g., a transmissive liquid crystaldisplay, a transflective liquid crystal display, a reflective liquidcrystal display, a direct-view liquid crystal display, or a projectionliquid crystal display). Examples of a display device includingelectronic ink or an electrophoretic element include electronic paper.In the case of a transflective liquid crystal display or a reflectiveliquid crystal display, some of or all of pixel electrodes function asreflective electrodes. For example, some or all of pixel electrodes areformed to contain aluminum, silver, or the like. In such a case, amemory circuit such as an SRAM can be provided under the reflectiveelectrodes, leading to lower power consumption. Note that in the case ofusing an LED chip, graphene or graphite may be provided under anelectrode or a nitride semiconductor of the LED chip. Graphene orgraphite may be a multilayer film in which a plurality of layers arestacked. The provision of graphene or graphite enables easy formation ofa nitride semiconductor film thereover, such as an n-type GaNsemiconductor layer including crystals. Furthermore, a p-type GaNsemiconductor layer including crystals or the like can be providedthereover, and thus the LED chip can be formed. Note that an AIN layermay be provided between the n-type GaN semiconductor layer includingcrystals and graphene or graphite. The GaN semiconductor layers includedin the LED chip may be formed by MOCVD. Note that when graphene isprovided, the GaN semiconductor layers included in the LED chip can alsobe formed by a sputtering method. In a display element using MEMS, adrying agent may be provided in a space where the display element isprovided (e.g., a space between an element substrate where the displayelement is provided and a counter substrate positioned on the sideopposite to the element substrate). The drying agent can preventmoisture from making operation of the MEMS or the like difficult andfrom promoting deterioration.

Note that in this specification and the like, a transistor can be formedusing any of a variety of substrates, for example. The type of asubstrate is not limited to a certain type. As the substrate, asemiconductor substrate (e.g., a single crystal substrate or a siliconsubstrate), an SOI substrate, a glass substrate, a quartz substrate, aplastic substrate, a metal substrate, a stainless steel substrate, asubstrate including stainless steel foil, a tungsten substrate, asubstrate including tungsten foil, a flexible substrate, an attachmentfilm, paper including a fibrous material, a base material film, or thelike can be used, for example. Examples of a glass substrate include abarium borosilicate glass substrate, an aluminoborosilicate glasssubstrate, and soda lime glass substrate. Examples of the flexiblesubstrate, the attachment film, the base material film, and the like aresubstrates of plastics typified by polyethylene terephthalate (PET),polyethylene naphthalate (PEN), and polyether sulfone (PES). Anotherexample is a synthetic resin such as acrylic. Furthermore,polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride canbe given as examples. Furthermore, polyamide, polyimide, aramid, epoxy,an inorganic vapor deposition film, and paper can be given as examples.Specifically, the use of semiconductor substrates, single crystalsubstrates, SOI substrates, or the like enables the manufacture ofsmall-sized transistors with a small variation in characteristics, size,shape, or the like and with high current capability. A circuit usingsuch transistors achieves lower power consumption of the circuit orhigher integration of the circuit.

Alternatively, a flexible substrate may be used as the substrate, andthe transistor may be provided directly on the flexible substrate.Alternatively, a separation layer may be provided between the substrateand the transistor. The separation layer can be used when part or thewhole of a semiconductor device formed over the separation layer isseparated from the substrate and transferred onto another substrate. Insuch a case, the transistor can be transferred to a substrate having lowheat resistance or a flexible substrate as well. For the aboveseparation layer, a stack including inorganic films, which are atungsten film and a silicon oxide film, or an organic resin film ofpolyimide or the like formed over a substrate can be used, for example.

In other words, a transistor may be formed using one substrate, and thentransferred to another substrate. Examples of a substrate to which atransistor is transferred include, in addition to the above substrateover which the transistor can be formed, a paper substrate, a cellophanesubstrate, an aramid film substrate, a polyimide film substrate, a stonesubstrate, a wood substrate, a cloth substrate (including a naturalfiber (e.g., silk, cotton, or hemp), a synthetic fiber (e.g., nylon,polyurethane, or polyester), a regenerated fiber (e.g., acetate, cupra,rayon, or regenerated polyester), and the like), a leather substrate,and a rubber substrate. When such a substrate is used, a transistor withexcellent properties or a transistor with low power consumption can beformed, a device with high durability, high heat resistance can beprovided, or reduction in weight or thickness can be achieved.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 7

The device of one embodiment of the present invention can be used fordisplay devices, personal computers, or image reproducing devicesprovided with recording media (typically, devices that reproduce thecontent of recording media such as digital versatile discs (DVDs) andhave displays for displaying the reproduced images. Other examples ofelectronic devices that can be equipped with the device of oneembodiment of the present invention are cellular phones, game machinesincluding portable game machines, portable data terminals, e-bookreaders, cameras such as video cameras and digital still cameras,goggle-type displays (head mounted displays), navigation systems, audioreproducing devices (e.g., car audio systems and digital audio players),copiers, facsimiles, printers, multifunction printers, automated tellermachines (ATM), and vending machines. FIGS. 43A to 43F illustratespecific examples of these electronic devices.

FIG. 43A illustrates a portable game machine, which includes a housing901, a housing 902, a display portion 903, a display portion 904, amicrophone 905, a speaker 906, an operation key 907, a stylus 908, andthe like. Although the portable game machine in FIG. 43A has the twodisplay portions 903 and 904, the number of display portions included ina portable game machine is not limited to this.

FIG. 43B illustrates a portable data terminal, which includes a firsthousing 911, a second housing 912, a first display portion 913, a seconddisplay portion 914, a joint 915, an operation key 916, and the like.The first display portion 913 is provided in the first housing 911, andthe second display portion 914 is provided in the second housing 912.The first housing 911 and the second housing 912 are connected to eachother with the joint 915, and the angle between the first housing 911and the second housing 912 can be changed with the joint 915. Imagesdisplayed on the first display portion 913 may be switched in accordancewith the angle at the joint 915 between the first housing 911 and thesecond housing 912. A display device with a position input function maybe used as at least one of the first display portion 913 and the seconddisplay portion 914. Note that the position input function can be addedby providing a touch panel in a display device. Alternatively, theposition input function can be added by provision of a photoelectricconversion element called a photosensor in a pixel portion of a displaydevice.

FIG. 43C illustrates a laptop personal computer, which includes ahousing 921, a display portion 922, a keyboard 923, a pointing device924, and the like.

FIG. 43D illustrates an electric refrigerator-freezer, which includes ahousing 931, a refrigerator door 932, a freezer door 933, and the like.

FIG. 43E illustrates a video camera, which includes a first housing 941,a second housing 942, a display portion 943, operation keys 944, a lens945, a joint 946, and the like. The operation keys 944 and the lens 945are provided in the first housing 941, and the display portion 943 isprovided in the second housing 942. The first housing 941 and the secondhousing 942 are connected to each other with the joint 946, and theangle between the first housing 941 and the second housing 942 can bechanged with the joint 946. Images displayed on the display portion 943may be switched in accordance with the angle at the joint 946 betweenthe first housing 941 and the second housing 942.

FIG. 43F illustrates a car, which includes a car body 951, wheels 952, adashboard 953, lights 954, and the like.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 8 Imaging Device

An imaging device of one embodiment of the present invention isdescribed below.

FIG. 44A is a plan view illustrating an example of an imaging device2000 of one embodiment of the present invention. The imaging device 2000includes a pixel portion 2010 and peripheral circuits for driving thepixel portion 2010 (a peripheral circuit 2060, a peripheral circuit2070, a peripheral circuit 2080, and a peripheral circuit 2090). Thepixel portion 2010 includes a plurality of pixels 2011 arranged in amatrix with p rows and q columns (p and q are each a natural numbergreater than or equal to 2). The peripheral circuit 2060, the peripheralcircuit 2070, the peripheral circuit 2080, and the peripheral circuit2090 are each connected to a plurality of pixels 2011, and a signal fordriving the plurality of pixels 2011 is supplied. In this specificationand the like, in some cases, “a peripheral circuit” or “a drivercircuit” indicates all of the peripheral circuits 2060, 2070, 2080, and2090. For example, the peripheral circuit 2060 can be regarded as partof the peripheral circuit.

The imaging device 2000 preferably includes a light source 2091. Thelight source 2091 can emit detection light P1.

The peripheral circuit includes at least one of a logic circuit, aswitch, a buffer, an amplifier circuit, and a converter circuit. Theperipheral circuit may be provided over a substrate where the pixelportion 2010 is formed. Part or the whole of the peripheral circuit maybe mounted using a semiconductor device such as an IC. Note that as theperipheral circuit, one or more of the peripheral circuits 2060, 2070,2080, and 2090 may be omitted.

As illustrated in FIG. 44B, the pixels 2011 may be provided to beinclined in the pixel portion 2010 included in the imaging device 2000.When the pixels 2011 are obliquely arranged, the distance between pixels(pitch) can be shortened in the row direction and the column direction.Accordingly, the quality of an image taken with the imaging device 2000can be improved.

<Configuration Example of Pixel>

The pixel 2011 included in the imaging device 2000 is formed with aplurality of subpixels 2012, and each subpixel 2012 is combined with afilter which transmits light with a specific wavelength band (colorfilter), whereby data for achieving color image display can be obtained.

FIG. 45A is a plan view showing an example of the pixel 2011 with whicha color image is obtained. The pixel 2011 illustrated in FIG. 45Aincludes a subpixel 2012 provided with a color filter transmitting lightwith a red (R) wavelength band (also referred to as a subpixel 2012R), asubpixel 2012 provided with a color filter transmitting light with agreen (G) wavelength band (also referred to as a subpixel 2012G), and asubpixel 2012 provided with a color filter transmitting light with ablue (B) wavelength band (also referred to as a subpixel 2012B). Thesubpixel 2012 can function as a photosensor.

The subpixel 2012 (the subpixel 2012R, the subpixel 2012G, and thesubpixel 2012B) is electrically connected to a wiring 2031, a wiring2047, a wiring 2048, a wiring 2049, and a wiring 2050. In addition, thesubpixel 2012R, the subpixel 2012G, and the subpixel 2012B are connectedto respective wirings 2053 which are independent from one another. Inthis specification and the like, for example, the wiring 2048 and thewiring 2049 that are connected to the pixel 2011 in the n-th row (n isan integer greater than or equal to 1 and less than or equal to p) arereferred to as a wiring 2048[n] and a wiring 2049[n]. For example, thewiring 2053 connected to the pixel 2011 in the m-th column (m is aninteger greater than or equal to 1 and less than or equal to q) isreferred to as a wiring 2053[m]. Note that in FIG. 45A, the wirings 2053connected to the subpixel 2012R, the subpixel 2012G, and the subpixel2012B in the pixel 2011 in the m-th column are referred to as a wiring2053[m]R, a wiring 2053[m]G, and a wiring 2053[m]B. The subpixels 2012are electrically connected to the peripheral circuit through the abovewirings.

The imaging device 2000 has a structure in which the subpixel 2012 iselectrically connected to the subpixel 2012 in an adjacent pixel 2011which is provided with a color filter transmitting light with the samewavelength band as the subpixel 2012, via a switch. FIG. 45B shows aconnection example of the subpixels 2012: the subpixel 2012 in the pixel2011 arranged in an n-th row and an m-th column and the subpixel 2012 inthe adjacent pixel 2011 arranged in an (n+1)-th row and the m-th column.In FIG. 45B, the subpixel 2012R arranged in the n-th row and the m-thcolumn and the subpixel 2012R arranged in the (n+1)-th row and the m-thcolumn are connected to each other via a switch 2001. The subpixel 2012Garranged in the n-th row and the m-th column and the subpixel 2012Garranged in the (n+1)-th row and the m-th column are connected to eachother via a switch 2002. The subpixel 2012B arranged in the n-th row andthe m-th column and the subpixel 2012B arranged in the (n+1)-th row andthe m-th column are connected to each other via a switch 2003.

The color filter used in the subpixel 2012 is not limited to red (R),green (G), and blue (B) color filters, and color filters that transmitlight of cyan (C), yellow (Y), and magenta (M) may be used. By provisionof the subpixels 2012 that sense light with three different wavelengthbands in one pixel 2011, a full-color image can be obtained.

The pixel 2011 including the subpixel 2012 provided with a color filtertransmitting yellow (Y) light may be provided, in addition to thesubpixels 2012 provided with the color filters transmitting red (R),green (G), and blue (B) light. The pixel 2011 including the subpixel2012 provided with a color filter transmitting blue (B) light may beprovided, in addition to the subpixels 2012 provided with the colorfilters transmitting cyan (C), yellow (Y), and magenta (M) light. Whenthe subpixels 2012 sensing light with four different wavelength bandsare provided in one pixel 2011, the reproducibility of colors of anobtained image can be increased.

For example, in FIG. 45A, in regard to the subpixel 2012 sensing a redwavelength band, the subpixel 2012 sensing a green wavelength band, andthe subpixel 2012 sensing a blue wavelength band, the pixel number ratio(or the light receiving area ratio) thereof is not necessarily 1:1:1.For example, the Bayer arrangement in which the pixel number ratio (thelight receiving area ratio) is set at red:green:blue=1:2:1 may beemployed. Alternatively, the pixel number ratio (the light receivingarea ratio) of red and green to blue may be 1:6:1.

Although the number of subpixels 2012 provided in the pixel 2011 may beone, two or more subpixels are preferably provided. For example, whentwo or more subpixels 2012 sensing the same wavelength band areprovided, the redundancy is increased, and the reliability of theimaging device 2000 can be increased.

When an infrared (IR) filter that transmits infrared light and absorbsor reflects visible light is used, the imaging device 2000 that sensesinfrared light can be achieved.

Furthermore, when a neutral density (ND) filter (dark filter) is used,output saturation which occurs when a large amount of light enters aphotoelectric conversion element (light-receiving element) can beprevented. With a combination of ND filters with different dimmingcapabilities, the dynamic range of the imaging device can be increased.

Besides the above-described filter, the pixel 2011 may be provided witha lens. An arrangement example of the pixel 2011, a filter 2054, and alens 2055 is described with cross-sectional views in FIGS. 46A and 46B.With the lens 2055, the photoelectric conversion element can receiveincident light efficiently. Specifically, as illustrated in FIG. 46A,light 2056 enters a photoelectric conversion element 2020 through thelens 2055, the filter 2054 (a filter 2054R, a filter 2054G, and a filter2054B), a pixel circuit 2030, and the like which are provided in thepixel 2011.

However, as indicated by a region surrounded with dashed-dotted lines,part of the light 2056 indicated by arrows might be blocked by somewirings 2057. Thus, a preferable structure is that the lens 2055 and thefilter 2054 are provided on the photoelectric conversion element 2020side, so that the photoelectric conversion element 2020 can efficientlyreceive the light 2056 as illustrated in FIG. 46B. When the light 2056enters the photoelectric conversion element 2020 from the photoelectricconversion element 2020 side, the imaging device 2000 with highsensitivity can be provided.

As the photoelectric conversion element 2020 illustrated in FIGS. 46Aand 46B, a photoelectric conversion element in which a p-n junction or ap-i-n junction is formed may be used.

The photoelectric conversion element 2020 may be formed using asubstance that has a function of absorbing a radiation and generatingelectric charges. Examples of the substance that has a function ofabsorbing a radiation and generating electric charges include selenium,lead iodide, mercury iodide, gallium arsenide, cadmium telluride, andcadmium zinc alloy.

For example, when selenium is used for the photoelectric conversionelement 2020, the photoelectric conversion element 2020 can have a lightabsorption coefficient in a wide wavelength range, such as visiblelight, ultraviolet light, infrared light, X-rays, and gamma rays.

One pixel 2011 included in the imaging device 2000 may include thesubpixel 2012 with a first filter in addition to the subpixel 2012illustrated in FIGS. 45A and 45B.

<Structure Example of Imaging Device>

FIG. 47 is a cross-sectional view of an element included in an imagingdevice. The imaging device illustrated in FIG. 47 includes the layer621, the layer 620 over the layer 621, and the layer 622 over the layer620. The layer 621 includes the transistor 491 provided over thesubstrate 400 and a photodiode 2360 formed with the substrate 400. Thelayer 622 includes the transistor 490 and a transistor 490 b. For thetransistor 490 b, the description of the transistor 490 can be referredto.

The photodiode 2360 included in the imaging device includes an electrode2361, an electrode 2362, and a semiconductor layer sandwiched betweenthe two electrodes. The electrode 2362 is connected to the conductivelayer 543 b included in the layer 620 through a conductive layer 512 bor the like included in the layer 621. The conductive layer 513 b is incontact with at least part of top and side surfaces of the projectionportion of the conductive layer 543 b. The conductive layer 513 b isconnected to the conductive layer 416 b included in the transistor 490through a conductive layer 544 b or the like included in the layer 622.Part of the conductive layer 513 b is preferably in contact with the topsurface of the insulating film 571.

The electrode 2361 is connected to a conductive layer 541 c providedover a low-resistance layer 2363 through the low-resistance layer 2363and also connected to a conductive layer 543 e included in the layer 620through other wiring layers such as a conductive layer 512 c included inthe layer 621. The conductive layer 513 e is in contact with at leastpart of top and side surfaces of a projection portion of the conductivelayer 543 e. The conductive layer 513 e is connected to, for example,other wiring layers included in the layer 622 through a conductive layer544 c or the like included in the layer 622. Part of the conductivelayer 513 e is preferably in contact with the top surface of theinsulating film 571.

For the conductive layer 513 b and 513 e, the description of theconductive layer 513 can be referred to. For the conductive layers 543 band 543 e, the description of the conductive layer 543 can be referredto.

In the example of cross-sectional view in FIG. 47, a light-receivingsurface of the photodiode 2360 is positioned on the side opposite to asurface of the substrate 400 where the transistor 491 is provided. Thisstructure can ensure the light path without the influences of varioustransistors, wirings, and the like. Thus, a pixel with a high apertureratio can be formed. Note that the light-receiving surface of thephotodiode 2360 can be positioned on the same side as the surface wherethe transistor 491 is formed.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

(Supplementary Notes on the Description in this Specification and theLike)

The following are notes on the description of the above embodiments andstructures in the embodiments.

One embodiment of the present invention can be constituted byappropriately combining the structure described in an embodiment withany of the structures described the other embodiments. In addition, inthe case where a plurality of structure examples are described in oneembodiment, some of the structure examples can be combined asappropriate.

Note that a content (or may be part of the content) described in oneembodiment may be applied to, combined with, or replaced by a differentcontent (or may be part of the different content) described in theembodiment and/or a content (or may be part of the content) described inone or a plurality of different embodiments.

Note that in each embodiment, a content described in the embodiment is acontent described with reference to a variety of diagrams or a contentdescribed with a text described in this specification.

Note that by combining a diagram (or may be part of the diagram)illustrated in one embodiment with another part of the diagram, adifferent diagram (or may be part of the different diagram) illustratedin the embodiment, and/or a diagram (or may be part of the diagram)illustrated in one or a plurality of different embodiments, much morediagrams can be formed.

In each Embodiment, one embodiment of the present invention has beendescribed; however, one embodiment of the present invention is notlimited to the described embodiments. The example where OS transistorsare used as transistors having low off-state current is described inEmbodiment 1 as one embodiment of the present invention; however, oneembodiment of the present invention is not limited to using OStransistors as long as transistors having low off-state current areused. Therefore, depending on conditions, a structure without OStransistors may be one embodiment of the present invention.

<Notes on the Description for Drawings>

In this specification and the like, terms for explaining arrangement,such as “over” and “under”, are used for convenience to describe thepositional relation between components with reference to drawings.Furthermore, the positional relation between components is changed asappropriate in accordance with a direction in which the components aredescribed. Therefore, the terms for explaining arrangement are notlimited to those used in this specification and may be changed to otherterms as appropriate depending on the situation.

The term “over” or “below” does not necessarily mean that a component isplaced directly on or directly below and directly in contact withanother component. For example, the expression “electrode B overinsulating layer A” does not necessarily mean that the electrode B is onand in direct contact with the insulating layer A and can mean the casewhere another component is provided between the insulating layer A andthe electrode B.

Furthermore, in a block diagram in this specification and the like,components are functionally classified and shown by blocks that areindependent from each other. However, in an actual circuit and the like,such components are sometimes hard to classify functionally, and thereis a case in which one circuit is concerned with a plurality offunctions or a case in which a plurality of circuits are concerned withone function. Therefore, the segmentation of blocks in the block diagramis not limited by the components described in the specification, and canbe differently determined as appropriate depending on situations.

In drawings, the size, the layer thickness, or the region is determinedarbitrarily for description convenience. Therefore, the size, the layerthickness, or the region is not limited to the illustrated scale. Notethat the drawings are schematically shown for clarity, and embodimentsof the present invention are not limited to shapes or values shown inthe drawings. For example, the following can be included: variation insignal, voltage, or current due to noise or difference in timing.

In drawings such as plan views (also referred to as layout views) andperspective views, some of components might not be illustrated forclarity of the drawings.

<Notes on Expressions that can be Rephrased>

In this specification or the like, in description of connections of atransistor, description of “one of a source and a drain” (or a firstelectrode or a first terminal), and “the other of the source and thedrain” (or a second electrode or a second terminal) are used. This isbecause a source and a drain of a transistor are interchangeabledepending on the structure, operation conditions, or the like of thetransistor. Note that the source or the drain of the transistor can alsobe referred to as a source (or drain) terminal, a source (or drain)electrode, or the like as appropriate depending on the situation.

In addition, in this specification and the like, the term such as an“electrode” or a “wiring” does not limit a function of the component.For example, an “electrode” is used as part of a “wiring” in some cases,and vice versa. Further, the term “electrode” or “wiring” can also meana combination of a plurality of “electrodes” and “wirings” formed in anintegrated manner.

In this specification and the like, “voltage” and “potential” can bereplaced with each other. The term “voltage” refers to a potentialdifference from a reference potential. When the reference potential is aground voltage, for example, “voltage” can be replaced with “potential.”The ground voltage does not necessarily mean 0 V. Potentials arerelative values, and the potential applied to a wiring or the like ischanged depending on the reference potential, in some cases.

In this specification and the like, the terms “film” and “layer” can beinterchanged with each other depending on the case or circumstances. Forexample, the term “conductive film” can be changed into the term“conductive layer” in some cases. Also, the term “insulating film” canbe changed into the term “insulating layer” in some cases.

<Notes on Definitions of Terms>

The following are definitions of the terms that are not mentioned in theabove embodiments.

<<Switch>>

In this specification and the like, a switch is conducting (on state) ornot conducting (off state) to determine whether current flowstherethrough or not. Alternatively, a switch has a function of selectingand changing a current path.

Examples of a switch are an electrical switch, a mechanical switch, andthe like. That is, any element can be used as a switch as long as it cancontrol current, without limitation to a certain element.

Examples of the electrical switch are a transistor (e.g., a bipolartransistor or a MOS transistor), a diode (e.g., a PN diode, a PIN diode,a Schottky diode, a metal-insulator-metal (MIM) diode, ametal-insulator-semiconductor (MIS) diode, or a diode-connectedtransistor), and a logic circuit in which such elements are combined.

In the case of using a transistor as a switch, an “on state” of thetransistor refers to a state in which a source and a drain of thetransistor are electrically short-circuited. Furthermore, an “off state”of the transistor refers to a state in which the source and the drain ofthe transistor are electrically disconnected. In the case where atransistor operates just as a switch, the polarity (conductivity type)of the transistor is not particularly limited to a certain type.

An example of a mechanical switch is a switch formed using a microelectro mechanical system (MEMS) technology, such as a digitalmicromirror device (DMD). Such a switch includes an electrode which canbe moved mechanically, and operates by controlling conduction andnon-conduction in accordance with movement of the electrode.

<<Channel Length>>

In this specification and the like, the channel length refers to, forexample, a distance between a source and a drain in a region where asemiconductor (or a portion where a current flows in a semiconductorwhen a transistor is on) and a gate overlap with each other or a regionwhere a channel is formed in a plan view of the transistor.

In one transistor, channel lengths in all regions are not necessarilythe same. In other words, the channel length of one transistor is notfixed to one value in some cases. Therefore, in this specification, thechannel length is any one of values, the maximum value, the minimumvalue, or the average value in a region where a channel is formed.

<<Channel Width>>

In this specification and the like, the channel width refers to, forexample, the length of a portion where a source and a drain face eachother in a region where a semiconductor (or a portion where a currentflows in a semiconductor when a transistor is on) and a gate electrodeoverlap with each other, or a region where a channel is formed in a planview of the transistor.

In one transistor, channel widths in all regions are not necessarily thesame. In other words, the channel width of one transistor is not fixedto one value in some cases. Therefore, in this specification, thechannel width is any one of values, the maximum value, the minimumvalue, or the average value in a region where a channel is formed.

Note that depending on transistor structures, a channel width in aregion where a channel is formed actually (hereinafter referred to as aneffective channel width) is different from a channel width shown in atop view of a transistor (hereinafter referred to as an apparent channelwidth) in some cases. For example, in a transistor having athree-dimensional structure, an effective channel width is greater thanan apparent channel width shown in a top view of the transistor, and itsinfluence cannot be ignored in some cases. For example, in aminiaturized transistor having a three-dimensional structure, theproportion of a channel region formed in a side surface of asemiconductor is high in some cases. In that case, an effective channelwidth obtained when a channel is actually formed is greater than anapparent channel width shown in the top view.

In a transistor having a three-dimensional structure, an effectivechannel width is difficult to measure in some cases. For example, toestimate an effective channel width from a design value, it is necessaryto assume that the shape of a semiconductor is known as an assumptioncondition. Therefore, in the case where the shape of a semiconductor isnot known accurately, it is difficult to measure an effective channelwidth accurately.

Therefore, in this specification, in a top view of a transistor, anapparent channel width that is a length of a portion where a source anda drain face each other in a region where a semiconductor and a gateelectrode overlap with each other is referred to as a surrounded channelwidth (SCW) in some cases. Further, in this specification, in the casewhere the term “channel width” is simply used, it may denote asurrounded channel width or an apparent channel width. Alternatively, inthis specification, in the case where the term “channel width” is simplyused, it may denote an effective channel width in some cases. Note thatthe values of a channel length, a channel width, an effective channelwidth, an apparent channel width, a surrounded channel width, and thelike can be determined by obtaining and analyzing a cross-sectional TEMimage and the like.

Note that in the case where electric field mobility, a current value perchannel width, and the like of a transistor are obtained by calculation,a surrounded channel width may be used for the calculation. In thatcase, a value different from one in the case where an effective channelwidth is used for the calculation is obtained in some cases.

<<Connection>>

In this specification and the like, when it is described that “A and Bare connected to each other”, the case where A and B are electricallyconnected to each other is included in addition to the case where A andB are directly connected to each other. Here, the expression “A and Bare electrically connected” means the case where electric signals can betransmitted and received between A and B when an object having anyelectric action exists between A and B.

Note that, for example, the case where a source (or a first terminal orthe like) of a transistor is electrically connected to X through (or notthrough) Z1 and a drain (or a second terminal or the like) of thetransistor is electrically connected to Y through (or not through) Z2,or the case where a source (or a first terminal or the like) of atransistor is directly connected to one part of Z1 and another part ofZ1 is directly connected to X while a drain (or a second terminal or thelike) of the transistor is directly connected to one part of Z2 andanother part of Z2 is directly connected to Y, can be expressed by usingany of the following expressions.

Examples of the expressions include, “X, Y, a source (or a firstterminal or the like) of a transistor, and a drain (or a second terminalor the like) of the transistor are electrically connected to each other,and X, the source (or the first terminal or the like) of the transistor,the drain (or the second terminal or the like) of the transistor, and Yare electrically connected to each other in this order”, “a source (or afirst terminal or the like) of a transistor is electrically connected toX, a drain (or a second terminal or the like) of the transistor iselectrically connected to Y, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are electrically connected to each otherin this order”, and “X is electrically connected to Y through a source(or a first terminal or the like) and a drain (or a second terminal orthe like) of a transistor, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are provided to be connected in thisorder”. When the connection order in a circuit configuration is definedby an expression similar to the above examples, a source (or a firstterminal or the like) and a drain (or a second terminal or the like) ofa transistor can be distinguished from each other to specify thetechnical scope.

Other examples of the expressions include, “a source (or a firstterminal or the like) of a transistor is electrically connected to Xthrough at least a first connection path, the first connection path doesnot include a second connection path, the second connection path is apath between the source (or the first terminal or the like) of thetransistor and a drain (or a second terminal or the like) of thetransistor, Z1 is on the first connection path, the drain (or the secondterminal or the like) of the transistor is electrically connected to Ythrough at least a third connection path, the third connection path doesnot include the second connection path, and Z2 is on the thirdconnection path” and “a source (or a first terminal or the like) of atransistor is electrically connected to X at least with a firstconnection path through Z1, the first connection path does not include asecond connection path, the second connection path includes a connectionpath through which the transistor is provided, a drain (or a secondterminal or the like) of the transistor is electrically connected to Yat least with a third connection path through Z2, and the thirdconnection path does not include the second connection path.” Stillanother example of the expression is “a source (or a first terminal orthe like) of a transistor is electrically connected to X through atleast Z1 on a first electrical path, the first electrical path does notinclude a second electrical path, the second electrical path is anelectrical path from the source (or the first terminal or the like) ofthe transistor to a drain (or a second terminal or the like) of thetransistor, the drain (or the second terminal or the like) of thetransistor is electrically connected to Y through at least Z2 on a thirdelectrical path, the third electrical path does not include a fourthelectrical path, and the fourth electrical path is an electrical pathfrom the drain (or the second terminal or the like) of the transistor tothe source (or the first terminal or the like) of the transistor”. Whenthe connection path in a circuit configuration is defined by anexpression similar to the above examples, a source (or a first terminalor the like) and a drain (or a second terminal or the like) of atransistor can be distinguished from each other to specify the technicalscope.

Note that these expressions are examples and there is no limitation onthe expressions. Here, X, Y, Z1, and Z2 each denote an object (e.g., adevice, an element, a circuit, a wiring, an electrode, a terminal, aconductive layer, and a layer).

Example 1

In this example, as the device including a conductive layer of oneembodiment of the present invention, a device was fabricated referringto the device 500 illustrated in FIG. 2B, and a cross section wasobserved.

[Sample Fabrication]

First, a 126.6 mm silicon wafer square was prepared as the substrate400. Then, as an insulating film 464 h, a 100-nm-thick film of siliconoxynitride was deposited over the silicon wafer. Then, a 150-nm-thickfilm of tungsten was deposited over the silicon oxynitride film.

The deposition of the silicon oxynitride film was conducted by a PECVDmethod under the conditions where the substrate temperature was 325° C.,an 13.56 MHz RF power source was used, the electric power was 35 W, thepressure was 133.3 Pa, and the gas was 5 sccm monosilane and 1000 sccmdinitrogen monoxide. The deposition of the tungsten film was conductedby a sputtering method under the conditions where the substratetemperature was 130° C., a 1 kW DC power source was used, the pressurewas 0.8 Pa, and the gas was approximately 80 sccm argon. The distancebetween the target and the substrate was 60 mm.

Next, a resist mask was formed over the tungsten film, and part of thetungsten film was removed by dry etching to form the conductive layer512. Then, the resist mask was removed (the step is schematicallyillustrated in FIG. 51A). The dry etching conditions of the tungstenfilm were as follows: the distance between an upper electrode and thesubstrate was 115 mm, the pressure was 2.0 Pa, the electric power of anRF power source was 1250 Won the upper side and 50 W on the lower side,and the etching gas was 28 sccm tetrafluoromethane, 24 sccm oxygen, and14 sccm chlorine.

Next, as an insulating film 584 b, a 800-nm-thick film of silicon oxidewas deposited over the silicon wafer and the conductive layer 512 (thestep is schematically illustrated in FIG. 51B). Then, the silicon oxidefilm was polished by a CMP method so that an approximately 300 nm thickfilm of silicon oxide remains over the conductive layer 512 (the step isschematically illustrated in FIG. 51C).

The silicon oxide film was deposited by PECVD method under theconditions where the substrate temperature was 300° C., a 27 MHz RFpower source was used, the electric power was 300 W, the pressure was100 Pa, and the gas was 15 sccm tetraethyl orthosilicate (TEOS) and 750sccm oxygen.

The polishing conditions in the CMP method were as follows. As apolishing cloth, IC1000/SUBA (registered trademark) using polyurethanefoam, which was produced by Nitta Haas Incorporated, was used. Asslurry, Semi-Sperse (registered trademark) 25 using fumed silica, whichwas produced by Cabot Microelectronics, was used. The flow rate of theslurry was 150 mL/min and the polishing pressure was 3.6 psi. Thenumbers of rotations of a polishing head and a table were 93 rpm and 90rpm, respectively. The polishing treatment was performed while theprocessed object was attached to the polishing head and the polishingcloth was attached to the table. After the polishing, megasonic cleaningwas performed.

Then, as the insulating film 571, a 50-nm-thick aluminum oxide film wasdeposited over the silicon oxide film. Then, as the insulating film 585,a 50-nm-thick silicon oxynitride film was deposited over the insulatingfilm 571 (the process overview was illustrated in FIG. 51D). Thedeposition of the aluminum oxide film was conducted by a sputteringmethod under the conditions where a target of aluminum oxide was used, a2.5 kW RF power source was used as a power source, the pressure was 0.4Pa, and the deposition gas was 25 sccm argon and 25 sccm oxygen. Thedistance between the target and the substrate was 60 mm.

The deposition conditions of the silicon oxynitride film were asfollows. The substrate temperature was 450° C., a 60 MHz RF power sourcewas used, the electric power was 150 W, the pressure was 40 Pa, and thegas was 1 sccm monosilane and 800 sccm dinitrogen monoxide.

As for the subsequent process, FIGS. 5B to 8C may be referred.

Next, a resist mask was formed over the insulating film 585, and anopening was formed in the insulating film 585, the insulating film 571,and the insulating film 584 b over the conductive layer 512. The removalof part of the insulating film 585, the insulating film 571, and theinsulating film 584 b was conducted by dry etching.

The etching of the insulating film 585, the insulating film 571, and theinsulating film 584 b was conducted in five steps.

The treatment conditions of the first step were as follows. The distancebetween an upper electrode and the substrate was 40 mm, the pressure was6.5 Pa, the electric power of an RF power source was 1000 W on the upperside and 100 W on the lower side, the etching gas was 100 sccmtetrafluoromethane, the treatment time was 39 sec, and the temperatureof the chamber was 20° C.

The treatment conditions of the second step were as follows. Thedistance between an upper electrode and the substrate was 25 mm, thepressure was 3.3 Pa, the electric power of an RF power source was 1800 Won the upper side and 2000 W on the lower side, the etching gas was 800sccm argon, 30 sccm oxygen, and 22 sccm hexafluoro-1,3-butadiene, andthe treatment time was 7 sec.

The treatment conditions of the third step were as follows. The distancebetween an upper electrode and the substrate was 25 mm, the pressure was5.2 Pa, the electric power of an RF power source was 300 W on the upperside and 1200 W on the lower side, the etching gas was 275 sccm argonand 50 sccm trifluoromethane, and the treatment time was 3 sec.

The treatment conditions of the fourth step were as follows. Thedistance between an upper electrode and the substrate was 25 mm, thepressure was 2.6 Pa, the electric power of an RF power source was 300 Won the upper side and 1200 W on the lower side, the etching gas was 275sccm argon and 50 sccm trifluoromethane, and the treatment time was 30sec.

The treatment conditions of the fifth step were as follows. The distancebetween an upper electrode and the substrate was 25 mm, the pressure was3.3 Pa, the electric power of an RF power source was 1800 W on the upperside and 2000 W on the lower side, the etching gas was 800 sccm argon,30 sccm oxygen, and 22 sccm hexafluoro-1,3-butadiene, and the treatmenttime was 43 sec.

Next, a 5-nm-thick film of titanium nitride was deposited in the openingof the insulating film 585 and over the insulating film 585, as aconductive film to be the conductive layer 543 a. Then, as a conductivefilm to be the conductive layer 543 b, a 250-nm-thick film of tungstenwas deposited in the opening of the insulating film 585 and over theinsulating film 585, over the titanium nitride film, so as to fill theopening.

The deposition conditions of the titanium nitride film were as follows.Titanium tetrachloride was introduced at a flow rate of 50 sccm for 0.05sec so as to be adsorbed onto the insulating film 585, and a nitrogengas was introduced at a flow rate of 4500 sccm for 0.2 sec for purgetreatment. Next, an ammonia gas was introduced at a flow rate of 2700sccm for 0.3 sec so as to be adsorbed onto the insulating film 585, andthen a nitrogen gas was introduced at a flow rate of 4000 sccm for 0.3sec. This is one cycle for depositing the titanium nitride film. Thethickness was adjusted by controlling the number of cycles. Thetemperature of the substrate stage was set at 412° C., the pressure was667 Pa, and the distance between the substrate stage and the gasemission stage was 3 mm.

The deposition of the tungsten film was conducted in three steps.

In the first step, a 3-nm thick film was deposited by performing threecycles under the conditions where the gas for deposition was 160 sccmtungsten hexafluoride, 400 sccm silane, 6000 sccm argon, 2000 sccmnitrogen, and 4000 sccm argon for the rear side of the stage, thepressure in the chamber was 1000 Pa during the deposition, and thetemperature of the substrate stage was 390° C.

In the second step, a 41-nm thick film was deposited in 15 sec under theconditions where the gas for deposition was 250 sccm tungstenhexafluoride, 2200 sccm and 1700 sccm hydrogen (for two gas lines), 2000sccm argon, 200 sccm nitrogen, and 4000 sccm argon for the rear side ofthe stage, the pressure in the chamber was 10666 Pa during thedeposition, and the temperature of the substrate stage was 390° C.

In the third step, the gas for deposition was 250 sccm tungstenhexafluoride, 2200 sccm and 1700 sccm hydrogen (for two gas lines), 2000sccm argon, 200 sccm nitrogen, and 4000 sccm argon for the rear side ofthe stage, the pressure in the chamber was 10666 Pa during thedeposition, and the temperature of the substrate stage was 390° C.

Next, top surfaces of the tungsten film and the titanium nitride filmwere polished by a CMP method so as to expose the insulating film 585;thus, the conductive layer 543 a and the conductive layer 543 b over theconductive layer 543 a were formed.

The polishing conditions in the CMP method were as follows. As apolishing cloth, IC1000/SUBA (registered trademark) using polyurethanefoam, which was produced by Nitta Haas Incorporated, was used. Asslurry, W7300-B21 using colloidal silica, which was produced by CabotMicroelectronics, was used. The flow rate of the slurry was 150 mL/minand the polishing pressure was 3.0 psi. The numbers of rotations of apolishing head and a table were 93 rpm and 90 rpm, respectively. Thepolishing treatment was performed while the processed object wasattached to the polishing head and the polishing cloth was attached tothe table. After the polishing, megasonic cleaning and cleaning with adiluted hydrofluoric acid was performed.

Next, as the insulating film 586, a 120-nm-thick film of siliconoxynitride was deposited over the insulating film 585 and the conductivelayer 543 b. For the deposition conditions of the silicon oxynitridefilm, the deposition conditions of the insulating film 585 were referredto. The substrate temperature was set here at 500° C.

Next, a resist mask was formed over the insulating film 586, and anopening was formed in the insulating film 586 and the insulating film585. The removal of part of the insulating film 586 and the insulatingfilm 585 was conducted by dry etching. The dry etching was conducted intwo steps.

The treatment conditions of the first step were as follows. The distancebetween an upper electrode and the substrate was 40 mm, the pressure was6.5 Pa, the electric power of an RF power source was 1000 W on the upperside and 100 W on the lower side, the etching gas was 100 sccmtetrafluoromethane, the treatment time was 39 sec, and the temperatureof the chamber was 20° C.

The treatment conditions of the second step were as follows. Thedistance between an upper electrode and the substrate was 40 mm, thepressure was 3.3 Pa, the electric power of an RF power source was 500 Won the upper side and 1150 W on the lower side, the etching gas was 800sccm argon, 30 sccm oxygen, and 22 sccm hexafluoro-1,3-butadiene, andthe treatment time was 32 sec.

Next, as a conductive film to be the conductive layer 513 a, a titaniumnitride film was deposited in the opening of the insulating film 586 andover the insulating film 586. Then, as a conductive film to be theconductive layer 513 b, a 250-nm-thick film of tungsten was deposited inthe opening of the insulating film 586 and over the insulating film 586so as to fill the opening. Here, samples 1 and 2 with differentthicknesses of the conductive layer 513 a were fabricated. Theconductive film of titanium nitride to be the conductive layer 513 a hasa thickness of 5 nm in the sample 1 and 10 nm in the sample 2. For thedeposition conditions of the titanium nitride film, the depositionconditions of the conductive layer 543 a were referred to. Furthermore,for the deposition conditions of the tungsten film, the depositionconditions of the conductive layer 543 b were referred to.

Next, top surfaces of the tungsten film and the titanium nitride filmwere polished by a CMP method so as to expose the insulating film 586;thus, the conductive layer 513 a and the conductive layer 513 b over theconductive layer 513 a were formed.

The CMP conditions were as follows. As a polishing cloth, IC1000/SUBA(registered trademark) using polyurethane foam, which was produced byNitta Haas Incorporated, was used. As slurry, W7300-B21 using colloidalsilica, which was produced by Cabot Microelectronics, was used. The flowrate of the slurry was 150 mL/min and the polishing pressure was 3.0psi. The numbers of rotations of a polishing head and a table were 93rpm and 90 rpm, respectively. The polishing treatment was performedwhile the processed object was attached to the polishing head and thepolishing cloth was attached to the table. After the polishing,megasonic cleaning and cleaning with a diluted hydrofluoric acid wasperformed.

Through the above-described process, the samples 1 and 2 werefabricated.

[Observation of Samples]

Next, as a coating layer 633 of the fabricated samples 1 and 2, a carbonfilm and a platinum film over the carbon film were deposited. Then, across section was processed with a focused ion beam (FIB).

Then, a cross section was observed by scanning transmission electronmicroscopy (STEM), specifically, with the use of Ultra-thin FilmEvaluation System HD-2300 manufactured by Hitachi High-TechnologiesCorporation. The accelerating voltage was 200 kV. The observationresults for the sample 1 are shown in FIGS. 52A and 52B and FIG. 53, andthose for the sample 2 are shown in FIGS. 54A and 54B and FIG. 55.

FIG. 52A shows the observed cross section of the sample 1, FIG. 52Bshows an enlarged view of a region surrounded by the dashed-dotted linein FIG. 52A, and FIG. 53 shows an enlarged view of a region surroundedby the dashed-dotted line in FIG. 52B. FIG. 54A shows the observed crosssection of the sample 2, FIG. 54B shows an enlarged view of a regionsurrounded by the dashed-dotted line in FIG. 54A, and FIG. 55 shows anenlarged view of a region surrounded by the dashed-dotted line in FIG.54B. The magnification of FIG. 52A and FIG. 54A is 13,000 times, that ofFIG. 52B and FIG. 54B is 50,000 times, and that of FIG. 53 and FIG. 55is 150,000 times. In FIG. 53 and the like, reference numerals for theconductive layers 513 a and 543 a are omitted.

In the cross sections in FIG. 53 and FIG. 55, top surfaces of theconductive layers 543 a and 543 b are positioned higher than the topsurface of the insulating film 571.

As shown in FIG. 52A to FIG. 55, the conductive layer 543 a and theconductive layer 543 b favorably fill the opening formed in theinsulating film 584 b, the insulating film 571, and the like. Moreover,as shown in FIG. 55 and the like, the conductive layer 513 a favorablycovers the opening formed in the insulating film 585, the insulatingfilm 586, and the like, and the conductive layer 513 b is formed overthe conductive layer 513 a so as to fill the opening.

Example 2

In this example, the estimation of the resistance was performed for thecase where two or more conductive layers are connected by a conductivelayer functioning as a plug.

[Sample Fabrication]

First, samples T-1 to T-4 were prepared. For the samples T-1 to T-4, aplurality of semiconductor elements were formed over the substrate 400.As the substrate 400, a silicon wafer was used. As the semiconductorelements, transistors including silicon in channel regions and the likewere formed. Then, the conductive layer 512 was formed and theinsulating film 584 was formed over a top surface of the conductivelayer 512. In the following description, unless otherwise specified, thesame treatment was performed on the samples T-1 to T-4.

As the insulating film 571 over the insulating film 584, a 30-nm thickfilm of aluminum oxide was deposited. The aluminum oxide film wasdeposited by a sputtering method using an aluminum oxide target. Then, a50-nm thick film of silicon oxide was deposited as the insulating film585. The silicon oxide film was deposited by a plasma CVD method usingSiH₄ and N₂O gases.

Then, a mask was formed, and an opening was formed in the silicon oxidefilm, the aluminum oxide film, and the insulating film 584 by etching.The mask was formed in such a manner that films of tungsten and siliconnitride as a hard mask were deposited, an organic film was applied, andlight exposure was performed. Then, part of the films of tungsten andsilicon nitride were removed by dry etching; thus, the hard mask wasformed.

Next, the insulating film 584 and the insulating film 585 were partlyremoved by dry etching. As a dry etching gas, hexafluoro-1,3-butadiene,oxygen, and argon were used. Then, hydrogen, octafluorocyclobutane, andargon were used. Then, hexafluoro-1,3-butadiene, oxygen, and argon wereused.

Then, a 10-nm thick film of titanium nitride was deposited inside theopening and on a surface of the insulating film 585, as a conductivefilm to be the conductive layer 543 a. Then, a 150-nm thick film oftungsten was deposited over the titanium nitride film, as a conductivefilm to be the conductive layer 543 b so as to fill the opening.

Next, top surfaces of the films of tungsten and titanium nitride werepolished by a CMP method so as to expose the insulating film 585. Thus,the conductive layer 543 a and the conductive layer 543 b over theconductive layer 543 a were formed.

Next, as the insulating film 586, a 120-nm thick film of silicon oxidewas deposited by a plasma CVD method using SiH₄ and N₂O gases.

Then, a resist mask was formed over the insulating film 586, and anopening was formed in the insulating film 586 and the insulating film585. For the removal of part of the insulating film 586 and theinsulating film 585, dry etching was used.

Then, a conductive film to be the conductive layer 513 a was depositedin the opening and over a surface of the insulating film 586. For thesamples T-1 and T-2, a 20-nm thick film of tantalum nitride and a 5-nmthick film of titanium nitride over the tantalum nitride film weredeposited. For the samples T-3 and T-4, a 5-nm thick film of titaniumnitride was deposited. The tantalum nitride film was deposited by asputtering method.

Then, as a conductive film to be the conductive layer 513 b, a 250-nmthick film of tungsten was deposited in the opening and on a surface ofthe sample T-1 so as to fill the opening.

Next, the films of tungsten, titanium nitride, and tantalum nitride werepolished by a CMP method so as to expose a surface of the insulatingfilm 586, so that the conductive layer 513 a and the conductive layer513 b were formed.

[Sample Measurement]

Here, a schematic view of a cross section of an element 120 that wasused in the measurement of this example is illustrated in FIG. 56A. Thestructure illustrated in FIG. 56A includes (m+2) conductive layers 513,(m+1) conductive layers 512, and (2m+2) conductive layers 543. Forexample, the m-th conductive layer 512 is connected to the (2m−1)-thconductive layer 543 and the 2m-th conductive layer 543. The (2m−1)-thconductive layer 543 is connected to the m-th conductive layer 513, andthe 2m-th conductive layer 543 is connected to the (m+1)-th conductivelayer 513. The number of conductive layers 543 included in the elementused in this measurement of this example is 1488.

FIG. 56B illustrates part of a top surface of the element 120. In thetop view, the conductive layer 543 substantially has a square shape witha side of approximately 170 nm. The conductive layer 543 functions as aplug, and the conductive layer 512 and the conductive layer 513 functionas wirings. The line width of the conductive layer 512 is approximately560 nm, and that of the conductive layer 513 is approximately 440 nm.Note that the first conductive layer 512 and the (m+2)-th conductivelayer 512 have a wide region larger than or equal to a 50 μm square.

Three elements 120 in each of the samples T-1 to T-4 were measured. FIG.57 shows resistance at a voltage of 0.1 V in current-voltagecharacteristics. Each sample had sufficiently low resistance with littlevariation among elements.

REFERENCE NUMERALS

-   120: element, 150: capacitor, 400: substrate, 402: insulating film,    404: conductive layer, 406: semiconductor, 406 a: semiconductor, 406    b: semiconductor, 406 c: semiconductor, 407: channel formation    region, 408: insulating film, 412: insulating film, 413: conductive    layer, 416 a: conductive layer, 416 b: conductive layer, 418:    insulating film, 423 a: low-resistance region, 423 b: low-resistance    region, 426 a: conductive layer, 426 b: conductive layer, 454:    conductive layer, 460: element isolation region, 462: insulating    film, 464 a: insulating film, 464 b: insulating film, 464 h:    insulating film, 470: insulating film, 474: region, 476: region,    490: transistor, 490 b: transistor, 491: transistor, 492:    transistor, 493: transistor, 500: device, 511: conductive layer,    512: conductive layer, 512 b: conductive layer, 512 c: conductive    layer, 513: conductive layer, 513 a: conductive layer, 513 b:    conductive layer, 513 c: conductive film, 513 d: conductive film,    513 e: conductive layer, 514: conductive layer, 515: conductive    layer, 516: conductive layer, 516 b: conductive layer, 517:    conductive layer, 518: conductive layer, 519: conductive layer, 521:    conductive layer, 522: conductive layer, 522 a: conductive layer,    522 b: conductive layer, 523: conductive layer, 523 a: conductive    layer, 523 b: conductive layer, 524: conductive layer, 526:    conductive film, 527: conductive layer, 528: conductive layer, 529:    conductive layer, 530: conductive layer, 530 b: conductive layer,    541: conductive layer, 541 c: conductive layer, 542: conductive    layer, 543: conductive layer, 543 a: conductive layer, 543 b:    conductive layer, 543 c: conductive film, 543 d: conductive film,    543 e: conductive layer, 544: conductive layer, 544 b: conductive    layer, 544 c: conductive layer, 545: conductive layer, 546:    conductive layer, 547: conductive layer, 547 b: conductive layer,    548: conductive layer, 571: insulating film, 572: insulating film,    581: insulating film, 581 a: insulating film, 581 b: insulating    film, 582: insulating film, 583: insulating film, 583 a: insulating    film, 583 b: insulating film, 584: insulating film, 584 b:    insulating film, 585: insulating film, 586: insulating film, 587:    insulating film, 588: insulating film, 589: insulating film, 590:    insulating film, 591: insulating film, 591 b: insulating film, 592:    insulating film, 593: insulating film, 594: insulating film, 595:    insulating film, 598: insulating film, 599: insulating film, 601:    opening, 602: opening, 603: opening, 604: conductive layer, 605:    opening, 606: projection portion, 606 a: semiconductor, 606 b:    semiconductor, 606 c: semiconductor, 607: mask, 608: mask, 610:    thickness, 611: mask, 612: insulating film, 613: conductive layer,    614: mask, 616 a: conductive layer, 616 b: conductive layer, 618:    insulating film, 619: insulating film, 620: layer, 621: layer, 622:    layer, 623: layer, 624: layer, 625: layer, 631: insulating film,    632: insulating film, 633: coating layer, 660 a: capacitor, 660 b:    capacitor, 661 a: transistor, 661 b: transistor, 662 a: transistor,    662 b: transistor, 663 a: inverter, 663 b: inverter, 700: substrate,    701: pixel portion, 702: scan line driver circuit, 703: scan line    driver circuit, 704: signal line driver circuit, 710: capacitor    wiring, 712: gate wiring, 713: gate wiring, 714: source or drain    electrode layer, 716: transistor, 717: transistor, 718: liquid    crystal element, 719: liquid crystal element, 720: pixel, 721:    switching transistor, 722: driver transistor, 723: capacitor, 724:    light-emitting element, 725: signal line, 726: scan line, 727: power    supply line, 728: common electrode, 800: RF tag, 801: communication    device, 802: antenna, 803: radio signal, 804: antenna, 805:    rectifier circuit, 806: constant voltage circuit, 807: demodulation    circuit, 808: modulation circuit, 809: logic circuit, 810: memory    circuit, 811: ROM, 901: housing, 902: housing, 903: display portion,    904: display portion, 905: microphone, 906: speaker, 907: operation    key, 908: stylus, 911: housing, 912: housing, 913: display portion,    914: display portion, 915: joint, 916: operation key, 921: housing,    922: display portion, 923: keyboard, 924: pointing device, 931:    housing, 932: refrigerator door, 933: freezer door, 941: housing,    942: housing, 943: display portion, 944: operation keys, 945: lens,    946: joint, 951: car body, 952: wheels, 953: dashboard, 954: lights,    1189: ROM interface, 1190: substrate, 1191: ALU, 1192: ALU    controller, 1193: instruction decoder, 1194: interrupt controller,    1195: timing controller, 1196: register, 1197: register controller,    1198: bus interface, 1199: ROM, 1200: memory device, 1201: circuit,    1202: circuit, 1203: switch, 1204: switch, 1206: logic element,    1207: capacitor, 1208: capacitor, 1209: transistor, 1210:    transistor, 1213: transistor, 1214: transistor, 1220: circuit, 2000:    imaging device, 2001: switch, 2002: switch, 2003: switch, 2010:    pixel portion, 2011: pixel, 2012: subpixel, 2012B: subpixel, 2012G:    subpixel, 2012R: subpixel, 2020: photoelectric conversion element,    2030: pixel circuit, 2031: wiring, 2047: wiring, 2048: wiring, 2049:    wiring, 2050: wiring, 2053: wiring, 2054: filter, 2054B: filter,    2054G: filter, 2054R: filter, 2055: lens, 2056: light, 2057:    wirings, 2060: peripheral circuit, 2070: peripheral circuit, 2080:    peripheral circuit, 2090: peripheral circuit, 2091: light source,    2100: transistor, 2200: transistor, 2360: photodiode, 2361:    electrode, 2362: electrode, 2363: low-resistance layer, 4000: RF    tag, 5100: pellets, 5120: substrate, 5161: region.

This application is based on Japanese Patent Application serial no.2015-022396 filed with Japan Patent Office on Feb. 6, 2015 and JapanesePatent Application serial no. 2015-053431 filed with Japan Patent Officeon Mar. 17, 2015, the entire contents of which are hereby incorporatedby reference.

1. A method for manufacturing a device, comprising the steps of: forminga first insulating film over a substrate; forming a second insulatingfilm over the first insulating film; removing part of the firstinsulating film and first part of the second insulating film to form afirst opening; forming a first conductor in the first opening and over atop surface of the second insulating film; forming a second conductor byplanarizing a surface of the first conductor so as to remove part of thefirst conductor; forming a third insulating film over the secondinsulating film and the second conductor; removing second part of thesecond insulating film and part of the third insulating film to form asecond opening so as to expose part of a top surface of the secondconductor and part of a side surface of the second conductor; forming athird conductor over a top surface of the third insulating film and inthe second opening so as to be in contact with the second conductor; andremoving part of the third conductor to form a fourth conductor.
 2. Amethod for manufacturing a device, comprising the steps of: forming afirst insulating film over a substrate; forming a second insulating filmover the first insulating film; removing part of the first insulatingfilm and first part of the second insulating film to form a firstopening; forming a first conductor in the first opening and over a topsurface of the second insulating film; removing part of the firstconductor by a chemical mechanical polishing method to make a surface ofthe first conductor parallel to a bottom surface of the substrate, sothat a second conductor is formed in the first opening; forming a thirdinsulating film over the second insulating film and the secondconductor; removing second part of the second insulating film and partof the third insulating film to form a second opening so as to exposepart of a top surface of the second conductor and part of a side surfaceof the second conductor; forming a third conductor over a top surface ofthe third insulating film and in the second opening so as to be incontact with the second conductor; and removing part of the thirdconductor to form a fourth conductor.
 3. A method for manufacturing adevice, comprising the steps of: forming a first insulating film over asubstrate; forming a second insulating film over the first insulatingfilm; removing part of the first insulating film and first part of thesecond insulating film to form a first opening; forming a firstconductor in the first opening and over a top surface of the secondinsulating film; removing part of the first conductor by a chemicalmechanical polishing method to make a surface of the first conductorparallel to a bottom surface of the substrate, so that a secondconductor is formed in the first opening; forming a third insulatingfilm over the second insulating film and the second conductor; removingsecond part of the second insulating film and part of the thirdinsulating film to form a second opening so as to expose part of a topsurface of the second conductor and part of a side surface of the secondconductor; forming a third conductor over a top surface of the thirdinsulating film and in the second opening so as to be in contact withthe second conductor; and removing part of the third conductor by achemical mechanical polishing method to make a surface of the thirdconductor parallel to the bottom surface of the substrate, so that afourth conductor is formed in the second opening.
 4. The method formanufacturing a device according to claim 1, comprising the step offorming an element over the fourth conductor, wherein the elementcomprises an oxide semiconductor.
 5. The method for manufacturing adevice according to claim 1, wherein the second insulating filmcomprises aluminum, wherein the first insulating film comprises silicon.6. The method for manufacturing a device according to claim 1, whereinthe second insulating film has a lower hydrogen-transmitting propertythan the first insulating film.
 7. A device comprising: a firstconductor; a second conductor; a first insulating film; and a secondinsulating film; wherein the second insulating film comprises a firstregion in contact with a top surface of the first insulating film and asecond region in contact with a side surface of the second conductor,wherein the side surface of the second conductor comprises a region incontact with the first insulating film, and wherein the second conductoris in contact with a side surface of the first conductor, a top surfaceof the first conductor, and the top surface of the first insulatingfilm.
 8. A device comprising: a first conductor; a second conductor; afirst insulating film; and a second insulating film; wherein the secondinsulating film comprises a first region in contact with a top surfaceof the first insulating film and a second region in contact with a sidesurface of the second conductor, wherein the second conductor comprisesa first region having a first thickness and a second region having asecond thickness, wherein the first region is in contact with a topsurface of the first conductor, wherein the second region is in contactwith the top surface of the first insulating film, and wherein the firstthickness is smaller than the second thickness.
 9. A device comprising:a first conductor; a second conductor; a first insulating film; and asecond insulating film; wherein the second insulating film comprises afirst region in contact with a top surface of the first insulating filmand a second region in contact with a side surface of the secondconductor, wherein the first conductor comprises a third conductor and afourth conductor, wherein a side surface of the third conductorcomprises a region in contact with the first insulating film, whereinthe fourth conductor is in contact with a top surface of the thirdconductor, and wherein the second conductor is in contact with the sidesurface of the third conductor, a top surface of the fourth conductor,and the top surface of the first insulating film.
 10. The deviceaccording to claim 7, wherein the device comprises an oxidesemiconductor, and wherein the oxide semiconductor is stacked over thesecond conductor.
 11. The device according to claim 7, wherein the firstinsulating film comprises aluminum, and wherein the second insulatingfilm comprises silicon.
 12. The device according to claim 7, wherein thefirst insulating film has a lower hydrogen-transmitting property thanthe second insulating film.
 13. A device comprising: a first conductor;a second conductor; a first insulating film; and a second insulatingfilm; wherein the second insulating film comprises a first region incontact with a top surface of the first insulating film, wherein thesecond conductor comprises a first region positioned over the firstconductor, wherein a region that is the highest of a top surface of thefirst conductor is higher than a second region that is the highest of atop surface of the second insulating film, and wherein a second regionthat is the lowest of a bottom surface of the second conductor is lowerthan the second region that is the highest of the top surface of thesecond insulating film.
 14. An electronic device comprising the deviceaccording to claim
 7. 15. An electronic device comprising the deviceaccording to claim
 8. 16. An electronic device comprising the deviceaccording to claim
 9. 17. An electronic device comprising the deviceaccording to claim 13.